ROHM 1SR139-400T-31

Rectifier diode
1SR139-400
Dimensions (Unit : mm)
Applications
High speed rectification
Features
1) Cylindrical mold. (MSR)
2) High reliability.
3) Fast recovery speed.
Construction
Silicon diffused junction
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Absolute peak reverse voltage
VRMS
Reverse voltage (repetitive peak)
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz / 1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Limits
Unit
V
V
A
A
500
400
1
40
150
-40 to +150
C
C
(*1)Mounting on alumina board
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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IR
Min.
-
Typ.
-
Max.
1.1
Unit
V
-
-
10
A
1/3
Conditions
IF=1.0A
VR=400V
2010.01 - Rev.C
ISR139-400
Data Sheet
Electrical characteristics curves
100000
1
Ta=150C
Ta=150C
Ta=-25C
0.01
0.001
1000
Ta=75C
100
Ta=25C
10
Ta=-25C
1
200
400
600
800
1000
1200
0
100
970
300
0
400
AVE:932.2mV
940
930
Ta=25C
VR=400V
n=30pcs
400
350
300
250
200
150
AVE:28.27nA
100
920
8.3ms
50
AVE:43.0A
Ta=25C
f=1MHz
VR=0V
n=10pcs
25
20
AVE:22.8pF
15
10
0
Ct DISPERSION MAP
100
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
2.5
2
1.5
AVE:1.597us
1
0.5
0
0
Ifsm
8.3ms
50
0
trr DISPERSION MAP
IFSM DISRESION MAP
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
0
1
10
IM=1mA
1000
50
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
2
FORWARD POWER
DISSIPATION:Pf(W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
IF=0.5A
10000
Ifsm
8.3ms
1cyc
1
100
30
30
5
PEAK SURGE
FORWARD CURRENT:I FSM(A)
RESERVE RECOVERY TIME:trr(us)
100
25
35
0
3
1cyc
20
40
IR DISPERSION MAP
Ifsm
15
45
50
VF DISPERSION MAP
150
10
50
450
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
950
5
REVERSE VOLTAGE:V R(V)
VR-Ct CHARACTERISTICS
500
Ta=25C
IF=1A
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:V F(mV)
200
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
960
10
1
0.1
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25C
0.1
100
Ta=125C
10000
Ta=125C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=75C
Rth(j-a)
time(ms)
td=300us
100
Rth(j-l)
Rth(j-c)
10
1
0.001
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
DC
D=1/2
Sin(θ=180)
1
0
0
1
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2010.01 - Rev.C
ISR139-400
3
DC
0.01
D=1/2
Sin(180)
3
2.5
0A
Io
0V
VR
2
t
T
DC
D=t/T
VR=200V
Tj=150℃
D=1/2
1.5
1
Sin(θ=180)
0.5
0
0
0
100
200
300
REVERSE VOLTAGE : V R(V)
VR-PR CHARACTERISTICS
400
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.02
Data Sheet
0A
0V
2.5
2
Io
t
T
DC
1.5
VR
D=t/T
VR=200V
Tj=150℃
D=1/2
1
Sin(θ=180)
0.5
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE:18.6V
20
15
10
AVE:5.00kV
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.01 - Rev.C
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R1010A