ROHM BD6041GUL_11

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STRUCTURE
PRODUCT NAME
Silicon Monolithic Integrated Circuit
Overvoltage Protection Controller with Internal FET
MODEL NAME
BD6041GUL
FEATURES
●Overvoltage Protection up to 28V
●Internal Low Ron (125m) FET
●Over voltage Lockout (OVLO)
●Under voltage Lockout(UVLO)
●Internal 2msec Startup Delay
●Over Current Protect
●Thermal Shut Down
●Small package: VCSP50L1(1.6mm x 1.6mm, height=0.55mm)
● Absolute maximum ratings (Ta=25℃)
Contents
Input supply voltage 1
Input supply voltage 2
Power dissipation
Operating temperature range
Storage temperature range
Symbol
Vmax1
Vmax2
Pd
Topr
Tstr
Rating
-0.3~30
-0.3~7
725
-35~+85
-55~+150
Unit
V
V
mW
℃
℃
Conditions
IN
other
※1 When using more than at Ta=25℃, it is reduced 5.8 mW per 1℃.
ROHM specification board 50mm× 58mm mounting.
● Operating range (Ta=-35~+85℃)
Parameter
Symbol
Range
Unit
Input voltage range
Vin
2.2~28
V
※
This product is not especially designed to be protected from radioactivity.
REV. A
Usage
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●
Electrical Characteristics
(Unless otherwise noted, Ta = 25C, IN=5V)
Parameter
● ELECTRICAL
Input Voltage Range
Supply Quiescent Current
Under Voltage Lockout
Under Voltage Lockout Hysteresis
Over Voltage Lockout
Over Voltage Lockout Hysteresis
Current limit
Vin vs. Vout Res.
OK Output Low Voltage
OK Leakage Current
EN input voltage (H)
EN input voltage (L)
EN input current
● TIMINGS
Start Up Delay
OK Going Up Delay
Output Turn Off Time
Alert Delay
Symbol
Min.
-
Rating
Typ.
Max.
28
90
2.77
150
6.0
150
150
400
1
0.5
50
V
A
V
mV
V
mV
A
m
mV
A
V
V
A
4
15
10
10
msec
msec
sec
sec
VIN
ICC
UVLO
UVLOh
OVLO
OVLOh
ILM
RON
OKVO
OKleak
ENH
ENL
ENC
2.53
50
5.7
50
1.2
1.45
12
45
2.65
100
5.85
100
125
25
Ton
Tok
Toff
Tovp
-
2
10
2
1.5
* This product is not especially designed to be protected from radioactivity.
REV. A
Unit
Conditions
IN=decreasing
IN=increasing
IN=increasing
IN=decreasing
SINK=1mA
EN=1.5V
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● Block Diagram
● PIN number/PIN name
Pin
number
A2
●
Pin name
IN1
A3
IN2
B2
IN3
B3
IN4
A1
OUT1
B1
OUT2
C3
GND
C1
OK
C2
EN
PIN DESCRIPTIONS
PIN
A2, A3
B2, B3
A1, B1
C1
C3
C2
NAME
IN1, 2,
3, 4
OUT1, 2
OK
GND
EN
FUNCTION
Input voltage Pin. A 1F low ESR capacitor,
or larger must be connected between this pin and GND
Output Voltage Pin
Active-low open drain output to signal if the adapter voltage is correct
Ground Pin
Enable input Drive EN high to turn off OUT (Hi-z output)
● Package Dimensions (VCSP50L1)
6041
LOT No.
REV. A
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●Use-related Cautions
(1) Absolute maximum ratings
If applied voltage (VDD, VIN), operating temperature range (Topr), or other absolute maximum ratings are exceeded, there is a risk of damage. Since
it is not possible to identify short, open, or other damage modes, if special modes in which absolute maximum ratings are exceeded are assumed,
consider applying fuses or other physical safety measures.
(2) Recommended operating range
This is the range within which it is possible to obtain roughly the expected characteristics. For electrical characteristics, it is those that are guaranteed
under the conditions for each parameter. Even when these are within the recommended operating range, voltage and temperature characteristics are
indicated.
(3) Reverse connection of power supply connector
There is a risk of damaging the LSI by reverse connection of the power supply connector. For protection from reverse connection, take measures such
as externally placing a diode between the power supply and the power supply pin of the LSI.
(4) Power supply lines
In the design of the board pattern, make power supply and GND line wiring low impedance.
When doing so, although the digital power supply and analog power supply are the same potential, separate the digital power supply pattern and analog
power supply pattern to deter digital noise from entering the analog power supply due to the common impedance of the wiring patterns. Similarly take
pattern design into account for GND lines as well.
Furthermore, for all power supply pins of the LSI, in conjunction with inserting capacitors between power supply and GND pins, when using electrolytic
capacitors, determine constants upon adequately confirming that capacitance loss occurring at low temperatures is not a problem for various characteristics
of the capacitors used.
(5) GND voltage
Make the potential of a GND pin such that it will be the lowest potential even if operating below that.
which the potential becomes less than a GND by actually including transition phenomena.
In addition, confirm that there are no pins for
(6) Shorts between pins and misinstallation
When installing in the set board, pay adequate attention to orientation and placement discrepancies of the LSI. If it is installed erroneously, there is a
risk of LSI damage. There also is a risk of damage if it is shorted by a foreign substance getting between pins or between a pin and a power supply or
GND.
(7) Operation in strong magnetic fields
Be careful when using the LSI in a strong magnetic field, since it may malfunction.
(8) Inspection in set board
When inspecting the LSI in the set board, since there is a risk of stress to the LSI when capacitors are connected to low impedance LSI pins, be sure to
discharge for each process. Moreover, when getting it on and off of a jig in the inspection process, always connect it after turning off the power supply,
perform the inspection, and remove it after turning off the power supply. Furthermore, as countermeasures against static electricity, use grounding in the
assembly process and take appropriate care in transport and storage.
(9) Input pins
Parasitic elements inevitably are formed on an LSI structure due to potential relationships. Because parasitic elements operate, they give rise to
interference with circuit operation and may be the cause of malfunctions as well as damage. Accordingly, take care not to apply a lower voltage than GND
to an input pin or use the LSI in other ways such that parasitic elements operate. Moreover, do not apply a voltage to an input pin when the power supply
voltage is not being applied to the LSI. Furthermore, when the power supply voltage is being applied, make each input pin a voltage less than the power
supply voltage as well as within the guaranteed values of electrical characteristics.
(10) Ground wiring pattern
When there is a small signal GND and a large current GND, it is recommended that you separate the large current GND pattern and small signal GND
pattern and provide single point grounding at the reference point of the set so that voltage variation due to resistance components of the pattern wiring and
large currents do not cause the small signal GND voltage to change. Take care that the GND wiring pattern of externally attached components also does
not change.
(11) Externally attached capacitors
When using ceramic capacitors for externally attached capacitors, determine constants upon taking into account a lowering of the rated capacitance due
to DC bias and capacitance change due to factors such as temperature.
(12) Thermal shutdown circuit (TSD)
When the junction temperature reaches the defined value, the thermal shutdown circuit operates and turns a switch OFF. The thermal shutdown circuit,
which is aimed at isolating the LSI from thermal runaway as much as possible, is not aimed at the protection or guarantee of the LSI. Therefore, do not
continuously use the LSI with this circuit operating or use the LSI assuming its operation.
(13) Thermal design
Perform thermal design in which there are adequate margins by taking into account the permissible dissipation (Pd) in actual states of use.
REV. A
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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