MBR160HW SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0933, Rev. A Green Products MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • Case: SOD-123, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams(approx) Mechanical Dimensions: In mm / Inches SOD-123(CJ) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0933, Rev. A Green Products Marking Diagram: Where X is Date Code L16 = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR160HW Package Shipping SOD-123(Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0933, Rev. A Green Products Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Maximum Average Forword Rectified Current @TA = 90°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Symbol MBR160HW Unit VRRM VRWM VR 60 V I(AV) 1.0 A IFSM 20 A Forward Voltage Drop @IF =1.0A VFM 0.72 V Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C IRM 0.3 mA Cj 30 pF Typical Junction Capacitance (Note 1) Max. Junction Temperature TJ -55 to +125 °C Storage Temperature Range TSTG -55 to +150 °C Case Style SOD-123 Note: 1. Measured at 1.0 MHz and applied reverse voltage of 5.0V D.C. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0933, Rev. A MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •