50WQ03FN N0707 REV.-

SANGDEST
MICROELECTRONICS
50WQ03FN
Green Products
Technical Data
Data Sheet N0707, Rev. -
50WQ03FN SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
•
Disk drives
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Features:
•
•
•
•
•
•
•
•
•
Popular DPAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Green products in compliance with the ROHS directive
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm / Inches
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
50WQ03FN
Green Products
Technical Data
Data Sheet N0707, Rev. -
Marking Diagram:
Where XXXXX is YYWWL
50
W
Q
03
FN
SSG
YY
WW
L
= Forward Current (5A)
= Configuration
= Device Type
= Reverse Voltage (30V)
= Package type
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
DPAK
(Pb-Free)
50WQ03FN
Shipping
2500 pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current*
(per device)
Peak One Cycle NonRepetitive Surge Current
Symbol
VRWM
Max.
30
Units
V
IF(AV)
Condition
50% duty cycle @TC = 136°C,
rectangular wave form
5.5
A
IFSM
8.3 ms, half Sine pulse
156
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
50WQ03FN
Green Products
Technical Data
Data Sheet N0707, Rev. -
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
VF1
VF2
Reverse Current *
IR1
IR2
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
CT
LS
dv/dt
Condition
@ 5A, Pulse, TJ = 25 °C
@ 10A, Pulse, TJ = 25 °C
@ 5 A, Pulse, TJ = 125 °C
@ 10 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
0.46
0.53
0.35
0.46
Units
3.0
mA
58
mA
590
pF
5.0
nH
10,000
V/µs
Specification
-55 to +150
-55 to +150
Units
°C
°C
3.0
°C/W
0.39
g
V
V
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0707, Rev. -
50WQ03FN
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0707, Rev. -
50WQ03FN
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •