SANGDEST MICROELECTRONICS MBR860S Technical Data Data Sheet N0029, Rev. A Green Products MBR860S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Features: • • • • • • • Designed as Bypass Diodes for Solar Panels High Forward Surge Capability Ultra Low Forward Voltage Drop Excellent High Temperature Stability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm TO-277B • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR860S Technical Data Data Sheet N0029, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL 8 60 S YY WW L = Forward Current (8A) = Reverse Voltage (60V) = Device Type = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR860S Package Shipping TO-277B (Pb-Free) 5000pcs/ reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Average Forward Current IF(AV) Condition 50% duty cycle @TC =80°C, rectangular wave form Peak One Cycle NonRepetitive Surge Current IFSM 8.3 ms, half Sine pulse Max. 60 Units V 8 A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR860S Technical Data Data Sheet N0029, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop Reverse Current Symbol VF1 VF2 IR1 IR2 Typical Junction Capacitance * Cj Condition @ 8A, Pulse, TJ = 25 °C @ 8A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125°C @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Max. 0.65 0.60 1.0 Units V V mA 20 mA 400 pF Specification -55 to +150 -55 to +150 1.5 Units °C °C 2.3 °C/W 0.08 g Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Soldering Point Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJS RθJC wt Condition DC operation DC operation - °C/W TO-277B • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR860S Technical Data Data Sheet N0029, Rev. A Green Products 10 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current-IR(MA) 1000 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 20 Reverse Voltage (V) 30 40 50 Percent of Rated Peak Reverse Voltage (%) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 60 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0029, Rev. A MBR860S Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •