SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A SBRF10100CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150°°C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm Dim A OPTION 1(CJ) Min Max 4.4 4.6 OPTION 2(HD) Min Max 4.30 4.70 b 0.6TYP 0.50 0.75 b1 1.3TYP 1.30 1.40 b2 1.7TYP 1.70 1.80 b3 1.6TYP 1.50 1.75 b4 1.2TYP 1.10 1.35 C 0.60TYP 0.50 0.75 D 14.8 15.1 14.80 15.20 E 10.06 10.26 9.96 10.36 e 2.55TYP 2.54TYP F 2.9 3.1 2.80 3.20 G 6.5 6.9 6.50 6.90 L 12.7 13.7 12.8 13.2 L1 3.4 3.8 3.60 4.00 L2 2.6 3.0 - - 2.50 Q 2.5 2.9 Q1 2.5 2.9 ØR 3.5REF 2.90 2.70REF 3.50REF • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A OPTION 3 OPTION 4 Dim Min Max Min Max A 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 C 0.36 0.53 0.45 0.60 D 15.67 16.07 15.67 16.07 E 9.96 10.36 9.96 10.36 e 2.54TYP 2.54 BSC F 2.34 2.76 2.34 2.74 G 6.50 6.90 6.48 6.88 L 12.37 12.77 12.78 13.18 L1 2.23 2.63 3.03 3.43 Q 2.56 2.96 2.56 2.96 Q1 3.10 3.50 3.10 3.50 ØR 2.98 3.38 3.08 3.28 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A OPTION 5 (SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A Marking Diagram: Where XXXXX is YYWWL SBR F 10 100 CT SSG YY WW L = Device Type = Package type = Forward Current (10A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) SBRF10100CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Max. Average Forward IF(AV) Max. Peak One Cycle NonRepetitive Surge Current (per leg) IFSM Condition 50% duty cycle @TC = 150°C, rectangular wave form Surge applied at rated load conditions halfwave, single phase,60Hz Max. 100 Units V 10 A 120 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current (per leg) * Symbol VF1 VF2 IR1 IR2 Repetitive peak reverse current Non-Repetitive Avalanche Energy Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * IRRM EAS CT LS dv/dt Condition @ 5 A, Pulse, TC = 25 °C @ 5 A, Pulse, TC = 125 °C @VR = rated VR TC = 25 °C @VR = rated VR TC = 125 °C tp = 2 µs square F= 1 kHz TJ = 25 °C, IAS = 5 A, L = 1mH @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.85 0.75 Units V V 1.0 mA 15.0 mA 1 A 12.5 mJ 300 pF 8.0 nH 10,000 V/µs Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg Condition - Specification -55 to +150 -55 to +150 Units °C °C RθJC DC operation 3.5 °C/W wt - 2 g ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SBRF10100CT Green Products Technical Data Data Sheet N0908, Rev. A 1000 Instantaneous Reverse Current-IR(μ A) Junction Capacitance (PF) 10000 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 100 TJ=125℃ 10 1 0.1 TJ=25℃ 0.01 10 40 20 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Instantaneous Forward Current (A) Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics 100 TJ=125℃ TJ=25℃ 10 1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0908, Rev. A SBRF10100CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •