SANGDEST MICROELECTRONICS Technical Data Data Sheet N1541, Rev. A 15TQ045-S Green Products 15TQ045-S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • 175℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches/mm TO-220AC(HY) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15TQ045-S Technical Data Data Sheet N1541, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL 15TQ045-S SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) 15TQ045-S Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current Non-repetitive avalanche energy Repetitive avalanche current ESD-rating Symbol VRWM IF(AV) Condition 50% duty cycle @TC =116°C, rectangular wave form Max. 45 IFSM 8.3 ms, half Sine pulse 400 A Eas TJ = 25 °C, L = 1mH, IAS = 5 A 15 mJ 5 A 4 KV IAR ESD IAS decay linearly to 0 in 1μs Frequency limited by TJ max. VA =1.5 VR level 2, human body model 15 Units V A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15TQ045-S Technical Data Data Sheet N1541, Rev. A Green Products Electrical Characteristics: Characteristics Reverse Breakdown Voltage Forward Voltage Drop Forward Voltage Drop VF1 Reverse Current * IR1 Reverse Current * IR1 Junction Capacitance * Symbol VBR VF1 CT Condition @ 100uA, Pulse, TA = 25 °C @ 10A, Pulse, TA = 25 °C @ 15A, Pulse, TA = 25 °C @ 10A, Pulse, TA = 125 °C @ 15A, Pulse, TA = 125 °C @VR = 20V , TJ = 25 °C @VR = rated VR , TJ = 25 °C @VR = rated VR , TJ =125°C @VR = 20V, TJ =150°C @VR = 5V, TC = 25 °C fSIG = 1MHz Min. 48 - Typ. 0.50 0.54 0.42 0.46 4 15 10 15 Max. 0.53 0.58 0.45 0.50 50 150 15 50 Units V 1533 1700 pF V V μA mA Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case (per package) Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation - Specification -55 to +175 -55 to +175 2.0 Units °C °C 2 g °C/W TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1541, Rev. A 15TQ045-S Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1541, Rev. A 15TQ045-S Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •