SANGDEST MICROELECTRONICS MBR20100CT Green Products Technical Data Data Sheet N0623, Rev. - MBR20100CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm Symbol A A1 A2 b b1 c D D1 E e e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min Typical Max 4.42 4.57 4.72 1.17 1.27 1.37 2.59 2.69 2.89 0.71 0.81 0.96 1.27 0.36 0.38 0.61 14.94 15.24 15.54 8.85 9.00 9.15 10.01 10.16 10.31 2.54 5.06 6.04 6.24 6.44 12.7 13.56 13.78 3.5 3.74 3.84 4.04 2.54 2.74 2.94 7° 3° 4° OPTION1(HD) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20100CT Green Products Technical Data Data Sheet N0623, Rev. - OPTION 2(CJ) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20100CT Green Products Technical Data Data Sheet N0623, Rev. - OPTION 3(SR) TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20100CT Green Products Technical Data Data Sheet N0623, Rev. - Marking Diagram: Where XXXXX is YYWWL MBR 20 100 CT SSG YY WW L = Device Type = Forward Current (20A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) MBR20100CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Max. Average Forward IF(AV) Condition 50% duty cycle @TC =105°C, rectangular wave form Max. Peak One Cycle NonRepetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse Max. 100 Units V 20 A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20100CT Green Products Technical Data Data Sheet N0623, Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current at DC condition (per leg) Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * Symbol VF1 VF2 IR1 IR2 CT LS dv/dt Condition @ 10A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Condition - Max. 0.90 Units V 0.80 V 1.0 mA 6.0 mA 300 pF 8.0 nH 10,000 V/µs Specification -55 to +150 -55 to +150 Units °C °C 3.5 °C/W 2 g Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Approximate Weight Case Style Symbol TJ Tstg RθJC wt DC operation TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20100CT Green Products Instantaneous Reverse Current (mA) 10000 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 10 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 40 20 30 40 50 60 70 80 Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 1 0.3 TJ=25℃ 0.4 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage-VR(V) Instantaneous Forward Current (A) Ju n ctio n Cap acitan ce-CT (PF ) Technical Data Data Sheet N0623, Rev. - 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0623, Rev. - MBR20100CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •