ROHM 2SA2093_11

Power transistor (60V, 2A)
2SA2093
Dimensions (Unit : mm)
Features
1) High speed switching.
(tf : Typ. : 30ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0A, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5880
ATV
Applications
Small signal low frequency amplifier
High speed switching
(1) Emitter
(2) Collector
(3) Base
Taping specifications
Abbreviated symbol : A2093
Structure
PNP epitaxial planar silicon transistor
Packaging specifications
Package
Type
Taping
Code
TV2
Basic ordering unit (pieces)
2500
2SA2093
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Parameter
VEBO
−6
V
DC
IC
−2.0
A
Pulsed
ICP
−4.0
A
PC
1.0
W
Tj
150
°C
Tstg
−55 to 150
°C
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗
∗Pw=10ms
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1/3
2011.03 - Rev.B
2SA2093
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
−60
−60
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
μA
μA
Collector-emitter saturation voltage
VCE (sat)
−
−200
−500
mV
hFE
120
−
390
−
DC current gain
fT
−
310
−
MHz
Corrector output capacitance
Cob
−
25
−
pF
Turn-on time
Storage time
Fall time
Ton
Tstg
Tf
−
−
−
25
120
30
−
−
−
ns
ns
ns
Transition frequency
Condition
IC= −1mA
IC= −100μA
IE= −100μA
VCB= −40V
VEB= −4V
IC= −1.0A
IB= −100mA
VCE= −2V
IC= −100mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0mA
f=1MHz
IC= −2.0A
IB1= −200mA
IB2=200mA
VCC −25V
∗
∗
∗Single non repetitive pulse
hFE RANK
Q
120−270
R
180−390
Electrical characteristic curves
1000
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
0
−0.5
−1
−1.5
100
VCE= −5V
VCE= −3V
VCE= −2V
10
1
−0.001
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
−1
IC / IB=20/1
IC / IB=10/1
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
−0.01
−0.1
−10
−1
VCE= −2V
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
1
−0.001
−0.01
−0.1
−10
−1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
−10
DC CURRENT GAIN : hFE
−1
1000
Ta=25°C
−1
−0.1
−0.01
−0.001
−10
IC / IB=10 / 1
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
VCE= −2V
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (A)
−10
Ta=125°C
Ta=25°C
Ta= −40°C
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3
IC / IB=10 / 1
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
2011.03 - Rev.B
2SA2093
Data Sheet
1000
100
10
1
0.001
0.01
0.1
1
Ta=25°C
f=1MHz
100
10
1
−0.1
10
1000
SWITCHING TIME : SW(ns)
Ta=25°C
VCE= −10V
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
TRANSITION FREQUENCY : fT (MHz)
1000
−1
−10
tstg
100
10
−0.01
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : IE (A)
tf
ton
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.8 Collector Output Capacitance
Fig.7 Transition Frequency
Ta=25°C
VCC= −25V
IC / IB=10 / 1
Fig.9 Switching Time
Switching characteristics measurement circuits
RL=12.5Ω
IC
IB 1
VIN
PW
VCC −25V
IB 2
PW 50μs
DUTY CYCLE ≤ 1%
IB2
IB1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
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c 2011 ROHM Co., Ltd. All rights reserved.
○
Ton
Tstg
Tf
IC
10%
3/3
2011.03 - Rev.B
Notice
Notes
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R1120A