SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A MBRF3060CTP SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features: • • • • • • • • • 150 °C T J operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm Dim A OPTION 1(CJ) Min Max 4.30 4.70 b 0.6TYP 0.50 0.75 b1 1.3TYP 1.30 1.40 b2 1.7TYP 1.70 1.80 b3 1.6TYP 1.50 1.75 b4 1.2TYP 1.10 1.35 C 4.4 4.6 OPTION 2(HD) Min Max 0.50 0.75 D 14.8 15.1 14.80 15.20 E 10.06 10.26 9.96 10.36 e 0.60TYP 2.55TYP 2.54TYP F 2.9 3.1 2.80 3.20 G 6.5 6.9 6.50 6.90 L 12.7 13.7 12.8 13.2 L1 3.4 3.8 3.60 4.00 L2 2.6 3.0 - - Q 2.5 2.9 2.50 2.90 Q1 2.5 2.9 ØR 3.5REF 2.70REF 3.50REF • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A OPTION 3 OPTION 4 Dim Min Max Min Max A 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 C 0.36 0.53 0.45 0.60 D 15.67 16.07 15.67 16.07 E 9.96 10.36 9.96 10.36 e 2.54TYP 2.54 BSC F 2.34 2.76 2.34 2.74 G 6.50 6.90 6.48 6.88 L 12.37 12.77 12.78 13.18 L1 2.23 2.63 3.03 3.43 Q 2.56 2.96 2.56 2.96 Q1 3.10 3.50 3.10 3.50 ØR 2.98 3.38 3.08 3.28 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A OPTION 5 (SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A Marking Diagram: Where XXXXX is YYWWL MBR F 30 60 CTP SSG YY WW L = Device Type = Package type = Forward Current (30A) = Reverse Voltage (60V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) MBRF3060CTP Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM Max. 60 Units V IF(AV) Condition 50% duty cycle @TC = 95°C, rectangular wave form 30 A IFSM 8.3 ms, half Sine pulse 200 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current (per leg)* Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change RSM Isolation Voltage (t = 1.0 second, R. H. < =30%, TA = 25 °C) CT dv/dt VISO * Condition @ 15A, Pulse, TJ = 25 °C @ 15 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Clip mounting, the epoxy body away from the heatsink edge by more than 0.110" along the lead direction. Clip mounting, the epoxy body is inside the heatsink. Screw mounting, the epoxy body is inside the heatsink. Max. 0.77 0.67 Units V V 1.0 mA 100 mA 700 pF 10,000 V/µs 4500 V 3500 1500 Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg Condition - Specification -55 to +150 -55 to +150 Units °C °C RθJC DC operation 3.0 °C/W RθJA DC operation 60 °C/W 2 g wt ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF3060CTP Green Products Technical Data Data Sheet N0125, Rev. A Instantaneous Reverse Current-IR(MA) 1000 TJ=25℃ TJ=25℃ 100 10 0 5 10 15 20 25 30 35 10 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 40 20 30 40 50 60 70 80 90 100 P ercent o f R ated P eak R everse V oltage (% ) Reverse Voltage (V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0125, Rev. A MBRF3060CTP Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •