MBRF3060CTP N0125 REV.A

SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
MBRF3060CTP SCHOTTKY RECTIFIER
Applications:
•
Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C T J operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
OUTLINE DRAWING
Mechanical Dimensions: In mm
Dim
A
OPTION 1(CJ)
Min
Max
4.30
4.70
b
0.6TYP
0.50
0.75
b1
1.3TYP
1.30
1.40
b2
1.7TYP
1.70
1.80
b3
1.6TYP
1.50
1.75
b4
1.2TYP
1.10
1.35
C
4.4
4.6
OPTION 2(HD)
Min
Max
0.50
0.75
D
14.8
15.1
14.80
15.20
E
10.06
10.26
9.96
10.36
e
0.60TYP
2.55TYP
2.54TYP
F
2.9
3.1
2.80
3.20
G
6.5
6.9
6.50
6.90
L
12.7
13.7
12.8
13.2
L1
3.4
3.8
3.60
4.00
L2
2.6
3.0
-
-
Q
2.5
2.9
2.50
2.90
Q1
2.5
2.9
ØR
3.5REF
2.70REF
3.50REF
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
OPTION 3
OPTION 4
Dim
Min
Max
Min
Max
A
4.53
4.93
4.50
4.90
b
0.71
0.91
0.70
0.90
b1
1.15
1.39
1.33
1.47
C
0.36
0.53
0.45
0.60
D
15.67
16.07
15.67
16.07
E
9.96
10.36
9.96
10.36
e
2.54TYP
2.54 BSC
F
2.34
2.76
2.34
2.74
G
6.50
6.90
6.48
6.88
L
12.37
12.77
12.78
13.18
L1
2.23
2.63
3.03
3.43
Q
2.56
2.96
2.56
2.96
Q1
3.10
3.50
3.10
3.50
ØR
2.98
3.38
3.08
3.28
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
OPTION 5 (SR)
ITO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
Marking Diagram:
Where XXXXX is YYWWL
MBR
F
30
60
CTP
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (30A)
= Reverse Voltage (60V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
ITO-220AB
(Pb-Free)
MBRF3060CTP
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Symbol
VRWM
Max.
60
Units
V
IF(AV)
Condition
50% duty cycle @TC = 95°C,
rectangular wave form
30
A
IFSM
8.3 ms, half Sine pulse
200
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)*
Max. Reverse Current (per
leg)*
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
RSM Isolation Voltage
(t = 1.0 second, R. H. < =30%,
TA = 25 °C)
CT
dv/dt
VISO
*
Condition
@ 15A, Pulse, TJ = 25 °C
@ 15 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Clip mounting, the epoxy body
away from the heatsink edge by
more than 0.110" along the lead
direction.
Clip mounting, the epoxy body is
inside the heatsink.
Screw mounting, the epoxy body
is inside the heatsink.
Max.
0.77
0.67
Units
V
V
1.0
mA
100
mA
700
pF
10,000
V/µs
4500
V
3500
1500
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +150
-55 to +150
Units
°C
°C
RθJC
DC operation
3.0
°C/W
RθJA
DC operation
60
°C/W
2
g
wt
ITO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRF3060CTP
Green Products
Technical Data
Data Sheet N0125, Rev. A
Instantaneous Reverse Current-IR(MA)
1000
TJ=25℃
TJ=25℃
100
10
0
5
10
15
20
25
30
35
10
1
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
10
40
20
30
40
50
60
70
80
90
100
P ercent o f R ated P eak R everse V oltage (% )
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0125, Rev. A
MBRF3060CTP
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •