STR-W6765 Quasi-Resonant Topology Primary Switching Regulators Features and Benefits Description ▪ Quasi-resonant topology IC Low EMI noise and soft switching ▪ Bottom-skip operation Improved system efficiency over the entire output load by avoiding increase of switching frequency ▪ Standby burst mode operation Lowers input power at very light output load condition ▪ Avalanche-guaranteed MOSFET Improves systemlevel reliability and does not require VDSS derating ▪ 800 V / 1.8 Ω, 52 to 110 W (Universal/230 VAC input) The STR-W6765 is a quasi-resonant topology IC designed for SMPS applications. It shows lower EMI noise characteristics than conventional PWM solutions, especially at greater than 2 MHz. It also provides a soft-switching mode to turn on the internal MOSFET at close to zero voltage (VDS bottom point) by use of the resonant characteristic of primary inductance and a resonant capacitor. The package is a fully molded TO-220, which contains the controller chip (MIC) and MOSFET, enabling output power up to 52 W with universal input or 110 W with a 230 VAC input. The bottom-skip mode skips the first bottom of VDS and turns on the MOSFET at the second bottom point, to minimize an increase of operating frequency at light output load, improving system-level efficiency over the entire load range. Continued on the next page… Package: 6-pin TO-220 There are two standby modes available to reduce the input power under very light load conditions. The first is auto-burst mode operation that is internally triggered by periodic sensing, and the other is a manual standby mode, which is executed by clamping the secondary output. In general applications, the manual standby mode reduces the input power further compared to auto-burst mode. The soft-start mode minimizes surge voltage and reduces power stress to the MOSFET and to the secondary rectifying Continued on the next page… Typical Application +B A ErrAmp P S1 GND D VCC 1 Standby ON/OFF D LowB 4 STR-W6765 B S2 SI Standby Out GND Cont 6 FB S/GND 3 7 OCP /BD 5 SS /OLP RX A B For ErrAmp, Sanken SE series device recommended For SI, Sanken linear regulator IC recommended CX ROCP 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/ Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Features and Benefits (continued) ▪ Various protections Improved system-level reliability ▫ Pulse-by-pulse drain overcurrent limiting ▫ Overvoltage protection (bias winding voltage sensing), with latch ▫ Overload protection with latch ▫ Maximum on-time limit Description (continued) diodes during the start-up sequence. Various protections such as overvoltage, overload, overcurrent, maximum on-time protections and avalanche-energy-guaranteed MOSFET secure good systemlevel reliability. Applications include the following: ▪ ▪ ▪ ▪ Set Top Box LCD PC monitor, LCD TV Printer, Scanner SMPS power supplies Selection Guide Part Number Package Packing STR-W6765 TO-220 Bulk, 100 pieces Absolute Maximum Ratings at TA = 25°C Parameter Drain Current1 Maximum Switching Current2 Symbol IDpeak IDmax Single Pulse Avalanche Energy3 EAS Input Voltage for Controller (MIC) SS/OLP Terminal Voltage FB Terminal Inflow Current FB Terminal Voltage OCP/BD Terminal Voltage VCC VSSOLP IFB VFB VOCPBD MOSFET Power Dissipation4 PD1 Terminal Conditions 1 - 3 Single pulse 1 - 3 TA = –20°C to 125°C Single pulse, VDD = 99 V, L = 20 mH, 1-3 ILpeak = 5.8 A 4-3 5-3 6-3 6 - 3 IFB within the limits of IFB 7-3 With infinite heatsink 1-3 Without heatsink 4 - 3 VCC × ICC – Refer to TOP – – – Rating 11.2 11.2 Unit A A 300 mJ 35 –0.5 to 6.0 10 –0.5 to 9.0 –1.5 to 5.0 28.7 1.3 0.8 –20 to 115 –20 to 115 –40 to 125 150 V V mA V V W W W °C °C °C °C Controller (MIC) Power Dissipation PD2 Operating Internal Leadframe Temperature TF Operating Ambient Temperature TOP Storage Temperature Tstg Channel Temperature Tch 1Refer to figure 2 2I DMAX is the drain current determined by the drive voltage of the IC and the threshold voltage, Vth, of the MOSFET 3Refer to figure 3 4Refer to figure 5 All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25°C, unless otherwise stated. 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 2 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 4 VCC + - Reg and Iconst Start Stop Burst R 1 Delay Q Burst Control D Control IC Drive Reg Protection Latch S OVP S/GND R Q S Q S + - BSD + BD Bottom Select OLP Soft Start 6 OCP R OSC Max On FB + FB + 3 + - OCP/BD SS/OLP Counter 7 5 Terminal List Table Number Name Description Functions 1 D 2 NC Drain MOSFET drain Clipped No connection 3 S/GND Source/ground terminal MOSFET source and ground 4 VCC Power supply terminal Input of power supply for control circuit 5 SS/OLP Soft Start/Overload Protection terminal Input to set delay for Overload protection and Soft Start operation 6 FB Feedback terminal Input for Constant Voltage Control and Burst (intermittent) Mode oscillation control signals 7 OCP/BD Overcurrent Protection/Bottom Detection Input for overcurrent detection and bottom detection signals Figure 1 – MOSFET Safe Operating Area Derating Curve Figure 2 – MOSFET Safe Operating Area Drain Current versus Voltage at TA = 25°C, Single Pulse 100.0 60 40 11.2 10.0 0. 1 it lim (on) nt S rr e o R D Cu ue t d 1.0 m s s m Drain Current, ID (A) 80 1 Safe Operating Area Temperature Derating Coefficient (%) 100 20 Refer to figure 1 for MOSFET SOA temperature derating coefficient 0.1 0 0 25 50 75 100 125 150 1 28103.30-6, Rev. 1 10 100 1000 Drain-to-Source Voltage, VDS (V) Temperature, TF (°C) SANKEN ELECTRIC CO., LTD. 3 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Figure 3 – MOSFET Avalanche Energy Derating Curve Figure 4 – Transient Thermal Resistance 10.000 Transient Thermal Resistance, RQJC (°C/W) EAS Temperature Derating Coefficient (%) 100 80 60 40 20 1.000 0.100 0.010 0.001 0 25 50 75 100 125 150 1μ 10μ 100μ 1m 10m 100m Time, t (s) Channel Junction Temperature, TJ (°C) Figure 5 – MOSFET Power Dissipation versus Temperature 30 Power Dissipation, PD1 (W) 25 With infinite heatsink PD1 = 28.7 W at TA ≤ 25°C 20 15 10 5 Without heatsink PD1 = 1.3 W at TA ≤ 25°C 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (°C) 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 4 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 ELECTRICAL CHARACTERISTICS Characteristic Symbol Terminals Min. Typ. Max. Units ELECTRICAL CHARACTERISTICS for Controller (MIC)1, valid at TA = 25°C, VCC = 20 V, unless otherwise specified Power Supply Start-up Operation Operation Start Voltage VCC(ON) 4-3 16.3 18.2 19.9 V Operation Stop Voltage VCC(OFF) 4-3 8.8 9.7 10.6 V Circuit Current In Operation ICC(ON) 4-3 – – 6 mA Circuit Current In Non-Operation ICC(OFF) 4-3 – – 100 μA Oscillation Frequency fosc 1-3 19 22 25 kHz Soft Start Operation Stop Voltage VSSOLP(SS) 5-3 1.1 1.2 1.4 V Soft Start Operation Charging Current ISSOLP(SS) 5-3 –710 –550 –390 μA Bottom-Skip Operation Threshold Voltage 1 VOCPBD(BS1) 7-3 –0.720 –0.665 –0.605 V Bottom-Skip Operation Threshold Voltage 2 VOCPBD(BS2) 7-3 –0.485 –0.435 –0.385 V Overcurrent Detection Threshold Voltage VOCPBD(LIM) 7-3 –0.995 –0.940 –0.895 V Normal Operation IOCPBD 7-3 –250 –100 –40 μA Quasi-Resonant Operation Threshold Voltage 1 VOCPBD(TH1) 7-3 0.28 0.40 0.52 V Quasi-Resonant Operation Threshold Voltage 2 VOCPBD(TH2) 7-3 0.67 0.80 0.93 V VFB(OFF) 6-3 1.32 1.45 1.58 V IFB(ON) 6-3 600 1000 1400 μA Standby Operation Start Voltage VCC(S) 4-3 10.3 11.1 12.1 V Standby Operation Start Voltage Interval VCC(SK) 4-3 1.10 1.35 1.65 V OCP/BDOCP/BD Terminal Outflow Current FB Terminal Threshold Voltage FB Terminal Inflow Current (Normal Operation) Standby Operation Standby Non-Operation Circuit Current ICC(S) 4-3 – 20 56 μA FB Terminal Inflow Current, Standby Operation IFB(S) 6-3 – 4 14 μA FB Terminal Threshold Voltage, Standby Operation VFB(S) 6-3 0.55 1.10 1.50 V Minimum On Time tON(MIN) 1-3 0.40 0.82 1.25 μs Maximum On Time tON(MAX) 1-3 27.5 32.5 39.0 μs Overload Protection Operation Threshold Voltage VSSOLP(OLP) 5-3 4.0 4.9 5.8 V Overload Protection Operation Charging Current ISSOLP(OLP) 5-3 –16 –11 –6 μA VCC(OVP) 4-3 25.5 27.7 29.9 V ICC(H) 4-3 – 45 140 μA VCC(La.OFF) 4-3 6.0 7.2 8.5 V Protection Operation Overvoltage Protection Operation Voltage Latch Circuit Holding Current2 Latch Circuit Release Voltage2 ELECTRICAL CHARACTERISTICS for MOSFET, valid at TA = 25°C, unless otherwise specified Drain-to-Source Breakdown Voltage Drain Leakage Current VDSS 1-3 800 – – V μA IDSS 1-3 – – 300 On Resistance RDS(on) 1-3 – – 1.8 Ω Switching Time tf 1-3 – – 400 ns – – 1.55 °C/W Thermal Resistance RθJA Junction to Internal Frame 1Current polarity with respect to the IC: positive current indicates current sink at the terminal named, negative current indicates source at the terminal named. 2Latch circuit refers to operation during Overload Protection or Overvoltage Protection. 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 5 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 ELECTRICAL CHARACTERISTICS Test Conditions* Parameter Operation Start Voltage Operation Stop Voltage Circuit Current In Operation Circuit Current In Non-operation Oscillation Frequency Soft Start Operation Stop Voltage Soft Start Operation Charging Current Bottom-Skip Operation Threshold Voltage 1 Bottom-Skip Operation Threshold Voltage 2 Overcurrent Detection Threshold Voltage OCP/BDOCP/BD Terminal Outflow Current Quasi-Resonant Operation Threshold Voltage 1 Quasi-Resonant Operation Threshold Voltage 2 FB Terminal Threshold Voltage FB Terminal Inflow Current (Normal Operation) Standby Operation Start Voltage Standby Operation Start Voltage Interval Standby Non-Operation Circuit Current FB Terminal Inflow Current, Standby Operation FB Terminal Threshold Voltage Standby Operation Minimum On Time Maximum On Time Test Conditions VCC voltage at which oscillation starts. VCC voltage at which oscillation stops. Inflow current flowing into power supply terminal in oscillation. Inflow current flowing into power supply terminal prior to oscillation. Oscillating frequency ( fosc= 1 / T ). SS/OLP terminal voltage at which ISS/OLP reach ≥–100 μA by raising the SS/OLP terminal voltage from 0 V gradually. VCC (V) Measurement Circuit 0→20 20→8.8 20 15 20 1 20 5 20 3 20 2 SS/OLP terminal charging current (SS/OLP terminal voltage = 0 V). Input 1 μs pulse width, as shown in waveform 1, to OCP/BD terminal twice after V1-3 rises. After that, offset the input waveform gradually from 0 V in the minus direction. Measurment of the offset voltage VOCPBD(BS1) is taken when the V1-3 start-to-fall point switches from twopulses-after to one-pulse-after. After measuring VOCPBD(BS1), as shown in waveform 2, offset the input waveform gradually. Measurment of the offset voltage VOCPBD(BS2) is taken when the V1-3 start-to-fall point switches from two-pulses-after to one-pulse-after. OCP/BD terminal voltage at which oscillation stops by lowering the OCP/BD terminal voltage from 0 V gradually. OCP/BD terminal outflow current (OCP/BD terminal voltage = –0.95 V). OCP/BD terminal voltage at which oscillation starts with setting the OCP/BD terminal voltage at 1 V, and then lowering the voltage gradually. OCP/BD terminal voltage at which oscillation stops by raising the OCP/BD terminal voltage from 0 V gradually. FB terminal voltage at which oscillation stops by raising the FB terminal voltage from 0 V gradually. FB terminal inflow current (FB terminal voltage = 1.6 V). VCC voltage at which ICC reaches ≥1 mA (FB terminal voltage = 1.6 V). Specified by VCC(SK) = VCC(S) – VCC(OFF). 20 20 0→15 – Inflow current flowing into power supply terminals prior to oscillation (FB terminal voltage = 1.6 V). 10.2 FB terminal inflow current (FB terminal voltage = 1.6 V). 10.2 FB terminal voltage at which oscillation starts by raising the FB terminal voltage from 0 V gradually. Waveform between terminals 1 and 3 at low. Waveform between terminals 1 and 3 at low. 4 15 20 20 6 1 Continued on the next page… 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 6 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 ELECTRICAL CHARACTERISTICS Test Conditions*, continued Parameter Test Conditions VCC (V) Overload Protection Operation Threshold Voltage Overload Protection Operation Charging Current Overvoltage Protection Operation Voltage SS/OLP terminal voltage at which oscillation stops. 20 SS/OLP terminal charging current (SS/OLP terminal voltage = 2.5 V). – Latch Circuit Holding Current Inflow current at VCC(OFF) – 0.3; after OVP operation. 5 VCC voltage at which oscillation stops. Latch Circuit Release Voltage VCC voltage at which ICC reaches 20 μA or lower by decreasing VCC after OVP operation. Drain-to-Source Breakdown Voltage IDSS = 300 μA Drain Leakage Current VDSS = 800 V Single Pulse Avalanche Energy – On-Resistance IDS = 1.4 A Switching Time – *Oscillating operation is specified with a rectangular waveform between terminals 1 and 3. 28103.30-6, Rev. 1 Measurement Circuit SANKEN ELECTRIC CO., LTD. 0→30 VCC(OFF) – 0.3 30→6 – – 30 20 20 1 7 8 9 1 7 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Measurement Circuit 1 D 㧝 S/GND VCC 㧠 㧟 SS/OLP FB 㧡 㧢 OCP/BD 㧣 ޓT 90㧑 50㧑 TON V 100ǡ 10㧑 4.7kǡ 0.1ǴF A ICC tf VCC 10V Measurement Circuit 2 D 㧝 S/GND 㧟 VCC 㧠 SS/OLP FB 㧡 㧢 OCP/BD 㧣 100ǡ 4.7kǡ 0.1ǴF VCC 20V 10V Measurement Circuit 3 D 㧝 S/GND 㧟 VCC 㧠 SS/OLP FB 㧡 㧢 OCP/BD 㧣 100ǡ 4.7kǡ 0.1ǴF VCC 10V 28103.30-6, Rev. 1 20V SANKEN ELECTRIC CO., LTD. 8 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Measurement Circuit 4 D S/GND 㧝 SS/OLP VCC 㧠 㧟 FB 㧡 OCP/BD 㧢 㧣 0.1ǴF V 100ǡ V 4.7kǡ A A VCC 10V Measurement Circuit 5 D S/GND 㧝 SS/OLP VCC 㧠 㧟 OCP/BD FB 㧡 㧢 㧣 100ǡ V A VCC 20V 10V Measurement Circuit 6 D 㧝 S/GND 㧟 VCC 㧠 SS/OLP FB 㧡 OCP/BD 㧢 㧣 5V OSC1 100ǡ 200㨪500nS 4.7kǡ 0.1ǴF 9V OSC1 VCC V1-3 10V 20V TON㧔MIN㧕 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 9 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Measurement Circuit 7 D S/GND 㧝 SS/OLP VCC 㧟 㧠 FB 㧡 OCP/BD 㧢 㧣 IDSS VDSS MOSFET MOSFET measuring equipment Measurement Circuit 8 D S/ GND 㧝 㧟 30V VCC SS/OLP VCC 㧠 FB 㧡 㧢 OCP/BD 㧣 VDS 0 Equation for calculation of avalanche engery, EAS; to be adjusted for ILPeak = 5.8 A IL IL ޓ VD S Peak VDS VDD 0 Avalanche energy tester E AS = T1 VDS Peak 1 2 ⋅ L ⋅ (ILPeak ) ⋅ 2 VDS Peak − VDD VCC Measurement Circuit 9 D S/ GND 㧝 㧟 VCC 㧠 SS/OLP 㧡 FB 㧢 OCP/BD 㧣 4.7kǡ VDS(ON) IDS 0.1ǴF RDS(ON)=VDS(ON)/IDS 20V 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 10 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Waveform 1 VDS VOCP/BD GND VOCPBD(BS1) Waveform 2 VDS VOCP/BD GND VOCPBD(BS2) 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 11 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 PACKAGE DIMENSIONS, TO-220 Ø3.2 ±0.2 2.6 ±0.1 Terminal dimension at case surface +0.2 5.0 ±0.5 +0.2 (5.4) 1.74 –0.1 1) ×R (2 1.34 –0.1 10.4 ±0.5 XXXXXXXX XXXXXXXX 2.8 MAX Branding 16.9 ±0.3 2.8 ±0.2 7.9 ±0.2 Gate Burr 4.2 ±0.2 4 ±0.2 10.0 ±0.2 +0.2 6×P1.27 ±0.15 = 7.62 ±0.15 Terminal dimensions at case surface 0.45 –0.1 5.08 ±0.6 Terminal dimension at lead tips 1 2 3 4 5 6 7 Gate burr: 0.3 mm (max.) Terminal core material: Cu Terminal treatment: Ni plating and solder dip Heat sink material: Cu Heat sink treatment: Ni plating Leadform: 2003 Weight (approximate): 2.3 g Drawing for reference only Branding codes (exact appearance at manufacturer discretion): 1st line, type: W6765 2nd line, lot: YMDD R Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) DD is the 2-digit date R is the manufacturer registration symbol Dimensions in millimeters 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 12 Quasi-Resonant Topology Primary Switching Regulators STR-W6765 Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40% to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting the products on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce excess stress. • Volatile-type silicone greases may crack after long periods of time, resulting in reduced heat radiation effect. Silicone greases with low consistency (hard grease) may cause cracks in the mold resin when screwing the products to a heatsink. Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials Inc. SC102 Dow Corning Toray Co., Ltd. Cautions for Mounting to a Heatsink • When the flatness around the screw hole is insufficient, such as when mounting the products to a heatsink that has an extruded (burred) screw hole, the products can be damaged, even with a lower than recommended screw torque. For mounting the products, the mounting surface flatness should be 0.05 mm or less. 28103.30-6, Rev. 1 • Please select suitable screws for the product shape. Do not use a flat-head machine screw because of the stress to the products. Self-tapping screws are not recommended. When using self-tapping screws, the screw may enter the hole diagonally, not vertically, depending on the conditions of hole before threading or the work situation. That may stress the products and may cause failures. • Recommended screw torque: 0.588 to 0.785 N●m (6 to 8 kgf●cm). • For tightening screws, if a tightening tool (such as a driver) hits the products, the package may crack, and internal stress fractures may occur, which shorten the lifetime of the electrical elements and can cause catastrophic failure. Tightening with an air driver makes a substantial impact. In addition, a screw torque higher than the set torque can be applied and the package may be damaged. Therefore, an electric driver is recommended. When the package is tightened at two or more places, first pre-tighten with a lower torque at all places, then tighten with the specified torque. When using a power driver, torque control is mandatory. Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260±5°C 10±1 s (Flow, 2 times) 380±10°C 3.5±0.5 s (Soldering iron, 1 time) • Soldering should be at a distance of at least 2.0 mm from the body of the products. Electrostatic Discharge • When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. • Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. • When using measuring equipment such as a curve tracer, the equipment should be grounded. • When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. • The products should always be stored and transported in Sanken shipping containers or conductive containers, or be wrapped in aluminum foil. SANKEN ELECTRIC CO., LTD. 13 STR-W6765 Quasi-Resonant Topology Primary Switching Regulators • The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. • Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. • When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. • Anti radioactive ray design is not considered for the products listed herein. • Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network. • The contents in this document must not be transcribed or copied without Sanken's written consent. 28103.30-6, Rev. 1 SANKEN ELECTRIC CO., LTD. 14