SANGDEST MICROELECTRONICS Technical Data Data Sheet N1655, Rev. - SDURD620CT Green Products SDURD620CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • Ultra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions (In mm/Inches): DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURD620CT Technical Data Data Sheet N1655, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SDUR D 6 20 CT SSG YY WW L = Device Type = Package type = Forward Current (6A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device SDURD620CT Package DPAK (Pb-Free) Shipping 2500pcs/ reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURD620CT Technical Data Data Sheet N1655, Rev. - Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current (per deivce) Peak One Cycle NonRepetitive Surge Current (Per leg) Symbol VRWM B B Io(AV) B B IFSM B Condition 50% duty cycle @Tc=90°C, rectangular wave form 8.3ms, Half Sine pulse B Max. 200 Units V 6 A 80 A Max. 1.2 Units V 5 μA 500 μA 35 ns Specification -55 to +150 -55 to +150 3.5 Units ℃ ℃ ℃/W 0.39 g Electrical Characteristics: Characteristics Forward Voltage Drop (Per leg)* Symbol VF B B IR1 B Reverse Current (Per leg)* Reverse Recovery Time (Per leg)* IR2 B trr B B B B B @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 125℃ IF=500mA, IR=1A,and Irm=250mA B B Condition @ IF=3A, Pulse, TJ = 25℃ B B B B B B B B B B B B B B B * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC B B B B wt B B Condition DC operation DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDURD620CT Technical Data Data Sheet N1655, Rev. - Junction Capacitance. (PF) 1000 100 TJ=25℃ 10 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current. (μA) Green Products 100 1 TJ=25℃ 0.1 0.01 0.001 10 Reverse Voltage. (V) 20 30 40 50 60 70 80 90 Percent Of Rated Peak Reverse Voltage. (%) Fig.1-Typical Junction Capacitance Instantaneous Forward Current-IF(A) TJ=125℃ 10 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1655, Rev. - SDURD620CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •