SANGDEST MICROELECTRONICS Technical Data Data Sheet N0009, Rev. - SDUR860 Green Products SDUR860 ULTRAFAST PLASTIC RECTIFIER Features: • • • • • • • • Utra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Mechanical Dimensions (In mm) and Marking: TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDUR860 Technical Data Data Sheet N0009, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SDUR 8 60 SSG YY WW L = Device Type = Forward Current (8A) = Reverse Voltage (600V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) SDUR860 Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (Per leg) Symbol VRWM Max. 600 Units V IF (AV) Condition 50% duty cycle @Tc=100°C, rectangular wave form 8 A IFSM 8.3ms, Half Sine pulse 110 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDUR860 Technical Data Data Sheet N0009, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Max. Reverse Current* Symbol VF1 IR1 IR2 Max. Reverse Recovery Time trr Condition @ 8A, Pulse, TJ = 25°C @VR = rated VR TJ = 25°C @ VR = rated VR TJ = 125°C IF=500mA, IR=1A,and Irm=250mA Max. 1.7 Units V 5 μA 50 μA 50 ns Specification -55 to +150 -55 to +150 Units °C °C * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Typical Thermal Resistance Junction to Ambient Approximate Weight Case Style Symbol TJ Tstg RθJA wt Condition DC operation - 25 K/W 1.6 g TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0009, Rev. - SDUR860 Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0009, Rev. - SDUR860 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •