SANGDEST MICROELECTRONICS MURD1030CTR Technical Data Data Sheet N1478, Rev. - Green Products MURD1030CTR ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • Ultra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions (In mm/Inches): DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MURD1030CTR Technical Data Data Sheet N1478, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MUR D 10 30 CTR SSG YY WW L = Device Type = Package type = Forward Current (10A) = Reverse Voltage (300V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DPAK (Pb-Free) MURD1030CTR Shipping 2500pcs/ reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Symbol VRWM IF(AV) Peak One Cycle NonRepetitive Surge Current (Per leg) IFSM Condition 50% duty cycle @Tc=100°C, rectangular wave form Max. 300 10 8.3ms, Half Sine pulse 150 Units V A A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MURD1030CTR Technical Data Data Sheet N1478, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (Per leg)* Reverse Current (Per leg)* Reverse Recovery Time (Per leg)* Symbol VF1 IR1 IR2 trr Condition @ IF=5A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ IF=500mA, IR=1A,and Irm=250mA Max. 1.3 Units V 10 μA 400 μA 50 ns Specification -55 to +150 -55 to +150 1.5 Units ℃ ℃ ℃/W 0.39 g * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case (Per Leg) Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MURD1030CTR Technical Data Data Sheet N1478, Rev. - Green Products 10 Reverse Current-IR(μA) Junction Capacitance-CT(PF) 1000 100 TJ=25℃ 10 1 TJ=125℃ 0.1 0.01 TJ=25℃ 0.001 1 0 5 10 15 20 25 30 35 0 40 50 150 200 250 R everse Voltage-VR (V) Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Instantaneous Forward CurrentIF(A) 100 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 300 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1478, Rev. - MURD1030CTR Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •