SANGDEST MICROELECTRONICS SDUR3020WT Technical Data Data Sheet N0164 Rev. - Green Products SDUR3020WT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Features: • • • • • • • • Utra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm / Inches TO-247AD TO-247AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDUR3020WT Technical Data Data Sheet N0164 Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SDUR 30 20 WT SSG YY WW L = Device Type = Forward Current (30A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device SDUR3020WT Package Shipping TO-247AD (Pb-Free) 30pcs/ tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Forward Current Max. Peak One Cycle NonRepetitive Surge Current (Per leg) Symbol VRWM Condition - Max. 200 Units V IF (AV) Rated Vr ,@Tc=140°C 30 A IFSM 8.3ms, Half Sine pulse @ TJ = 25°C 110 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SDUR3020WT Technical Data Data Sheet N0164 Rev. - Green Products Electrical Characteristics: Characteristics Breakdown voltage, Blocking voltage Max. Forward Voltage Drop* Symbol VBR VR VF1 VF2 Max. Reverse Current* IR1 IR2 Max. Reverse Recovery Time trr1 Condition IR = 50μA MIN. TYP. Max. Units 200 - - V - - 1.05 V - - 0.85 V - - 10 μA - - 500 uA - - 35 ns TYP. 1.6 Max. 150 150 - @ 15A, Pulse, TJ = 25°C @ 15A, Pulse, TJ = 150°C @VR = rated VR TJ = 25°C @VR = rated VR TJ = 125°C IF=500mA, IR=1A,and Irm=250mA * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation - MIN. -65 -65 TO-247AD 6.7 - Units °C °C °C/W g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0164 Rev. - SDUR3020WT Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0164 Rev. - SDUR3020WT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •