SANGDEST MICROELECTRONICS Technical Data Data Sheet N1177, Rev. - 189NQ135/R-1 189NQ150/R-1 Green Products 189NQ135/R-1 189NQ150/R-1 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • • • 175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 189NQ135-1 189NQ135R-1 Mechanical Dimensions: In Inches / mm PRM1-1(HALF PAK Module) MARKING,MOLDING RESIN st nd Marking for 189NQ135/R-1, 1 row SS YYWWL, 2 row 189NQ135/R-1 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 189NQ135/R-1 189NQ150/R-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1177, Rev. - Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =110°C, rectangular wave form 8.3 ms, half Sine pulse IFSM 135 150 Max. 189NQ135/R-1 189NQ150/R-1 180 Units V A 2130 A Max. 1.07 1.27 0.74 0.86 4.5 65 Units Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Symbol VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change z IR1 IR2 CT LS dv/dt Condition @ 180A, Pulse, TJ = 25 °C @ 360A, Pulse, TJ = 25 °C @ 180A, Pulse, TJ = 125 °C @ 360A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - V V mA mA 4500 pF 6.0 nH 10,000 V/μs Specification -55 to +175 -55 to +175 Units °C °C Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Typical Thermal Resistance, case to Heat Sink Symbol TJ Tstg Condition - RθJC DC operation 0.30 °C/W Rθcs Mounting surface, smooth and greased 0.15 °C/W Mounting Torque TM Non-lubricated threads Approximate Weight Case Style wt - Mounting Torque Terminal Torque 25.6 23(min) 29(max) 35(min) 46(max) Kg-cm g PRM1-1 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1177, Rev. - 189NQ135/R-1 189NQ150/R-1 Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1177, Rev. - 189NQ135/R-1 189NQ150/R-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •