SKKT 273/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 274 Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1300 V VRRM 1200 V IT(AV) ITSM i2t SEMIPACK® 3 Thyristor Modules SKKT 273/12 E sinus 180° 10 ms 10 ms VDRM (di/dt)cr Tj = 130 °C (dv/dt)cr Tj = 130 °C Tj Visol • Industrial standard package • Electrically insulated base plate • Heat transfer through aluminum oxide ceramic insulated metal base plate • Chip soldered on direct copper bonded Al2O3 ceramic • Thyristor with center gate • UL recognition applied for file no. E63532 Typical Applications* • DC motor control (e. g. for machine tools) • Temperature control (e. g. for ovens, chemical processes) • Professional light dimming (studios, theaters) V 130 A/µs 1000 V/µs -40 ... 130 °C Module Tstg Features 1200 a.c.; 50 Hz; r.m.s. -40 ... 125 °C 1 min 3000 V 1s 3600 V Characteristics Symbol Conditions min. typ. max. Unit V Chip VT Tj = 25 °C, IT = 750 A 1.6 VT(TO) Tj = 130 °C 0.9 V rT Tj = 130 °C 0.92 m IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM 100 mA tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 130 °C 150 IH Tj = 25 °C 150 500 mA IL Tj = 25 °C, RG = 33 300 2000 mA VGT Tj = 25 °C, d.c. 2 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. IGD Tj = 130 °C, d.c. Rth(j-c) Rth(j-c) Rth(j-c) cont. sin. 180° rec. 120° µs 0.25 V 10 mA per chip 0.104 K/W per module 0.052 K/W per chip 0.108 K/W per module 0.054 K/W per chip 0.122 K/W per module 0.061 K/W 0.08 K/W Module Rth(c-s) chip 0.08 module 0.04 K/W Ms to heatsink M5 4.25 5.75 Mt to heatsink M8 7.65 10.34 Nm 5 * 9,81 m/s² a w 410 Nm g SKKT © by SEMIKRON Rev. 2 – 17.05.2013 1 SKKT 273/12 E Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 2 – 17.05.2013 © by SEMIKRON SKKT 273/12 E Fig. 4L: Power dissipation of three modules vs. direct and rms current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 2 – 17.05.2013 3 SKKT 273/12 E Fig. 9: Gate trigger characteristics SKKT SEMIPACK 3 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 4 Rev. 2 – 17.05.2013 © by SEMIKRON