UNISONIC TECHNOLOGIES CO., LTD UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH DESCRIPTION The UTC UCS1604S is an integrated PWM controller and Power MOSFET specifically designed for switching operation with minimal external components. The UTC UCS1604S is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power, Frequency Hopping , Constant Output Power Limiting , Slope Compensation ,Over Current Protection (OCP), Over Voltage Protection (OVP), Over Load Protection (OLP), Under Voltage Lock Out (UVLO), Over Temperature Protection (OTP), etc. IC will be shutdown or can auto-restart in situations. FEATURE * Internal Power MOSFET (600V) * Programming Gate Driver Capability * Frequency hopping for Improved EMI Performance. * Lower than 30mW Standby Power Design * Linearly decreasing frequency to 20~35KHz during light load * Internal Soft start * Internal Slope Compensation * Constant Power Limiting for universal AC input Range * Gate Output Maximum Voltage Clamp(16V) * Over temperature protection * Over load protection * Over voltage protection * Leading edge blanking * Cycle-by-Cycle current limiting * Under Voltage Lock Out ORDERING INFORMATION Ordering Number Lead Free Halogen Free UCS1604SL-D08-T UCS1604SG-D08-T DIP-8 Package Packing DIP-8 Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R103-117 .a UCS1604S LINEAR INTEGRATED CIRCUIT PIN CONFIGURATION PIN DESCRIPTION PIN NO. 1 2 3 4 5 6 7 8 Preliminary PIN NAME VCC-G VCC FB CS DRAIN DRAIN GND GND DESCRIPTION Supply voltage Supply voltage Feedback Current sense input Power MOSFET drain Power MOSFET drain Ground Ground BLOCK DIAGRAM Notes: OLP (Over Load Protection) OVP (Over Voltage Protection) OTP (Over Temperature Protection) OCP (Over Current Protection) UVLO (Under Voltage Latch-Out) LEB (Led Edge Blanking) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R103-117 .a UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 32 V Input Voltage to FB Pin VFB -0.3 ~ 6.5 V Input Voltage to CS Pin VCS -0.3 ~ 6.5 V Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +125 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. OPERATING RANGE PARAMETER Supply Voltage VCC-G Pin Series Resistor Open Frame Output Power for 85~264VAC SYMBOL VCC VCC_GR PIN_MAX RATINGS 10 ~ 24 51 ~ 510 22 UNIT V Ω W ELECTRICAL CHARACTERISTICS (TA=25°C, VCC=15V, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS SUPPLY SECTION Start Up Current IST VCC=VTHD(ON)-1V Supply Current with Switch IOP VFB=3.5V VDD Zener Clamp Current vCLAMP IVDD=20mA UNDER-VOLTAGE LOCKOUT SECTION Start Threshold Voltage VTHD(ON) Min. Operating Voltage VCC(MIN) CONTROL SECTION Feedback Source Current IFB VFB=0 VFB Open Loop Voltage Level VFB_Open Burst-Mode Out FB Voltage VFB(OUT) VCS =0 Burst-Mode Enter FB Voltage VFB(IN) VCS =0 Switching Normal Initial VFB=3.5V F(SW) Frequency Burst mode Base Frequency Duty Cycle DMAX VFB=3.5V, VCS=0 Frequency Hopping FJ(SW) Frequency Variation vs. VCC Deviation FDV VCC=10 ~ 20V Frequency Variation vs. Temperature Deviation FDT T=-40 ~ 110°C Soft-Start Time TSOFTS PROTECTION SECTION OVP Threshold VOVP VFB=3.5V OLP Threshold VFB(OLP) VCS=0 Delay Time Of OLP TD-OLP OTP Threshold T(THR) CURRENT LIMITING SECTION Leading Edge Blanking Time tLEB Peak Current Limitation VSENSE-H VFB=3.9V Threshold Voltage For Valley VSENSE-L VFB=3.9V POWER MOS-TRANSISTOR SECTION Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250μA Drain-Source Diode Continuous Source Current IS Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.1A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 28 2 3.2 30 15 5.5 32 μA mA V 18 6.5 20 8 22 9.5 V V 60 20 70 -9 240 5.4 1.8 1.6 65 80 70 90 +9 10 10 5 25 60 200 0.68 27 4.2 88 140 350 0.92 0.74 29 120 550 μA V V V kHz kHz % % % % ms V V ms °C 0.8 nS V V 6 1.5 V A Ω 600 3 of 7 QW-R103-117 .a UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT FUNCTIONAL DESCRIPTION The internal reference voltages and bias circuit work at VCC> VTHD(ON), and shutdown at VCC<VCC(MIN). (1) Soft-Start When every IC power on, driver output duty cycle will be decided by inter-slope voltage VSOFTS and VCS on current sense resistor at beginning. After the whole soft-start phase end, and driver duty cycle depend on VFB and VCS. The relation among VSOFTS, VFB and VOUT as followed Fig.3. Furthermore, soft-start phase should end before VCC reach VCC(MIN) during VCC power on. Otherwise, if soft-start phase remain not end before VCC reach VCC(MIN) during VCC power on, IC will enter auto-restart phase and not set up VOUT. Fig.3 Soft-start phase (2) Internal Synchronized Slope Compensation Built-in slope compensation circuit adds voltage ramp onto the current sense input voltage for PWM generation, this greatly improves the close loop stability at CCM and prevents the sub-harmonic oscillation and thus reduces the output ripple voltage. (3) Frequency Hopping For EMI Improvement The Frequency Hopping is implemented in the IC; there are two oscillators built-in the IC. The first oscillator is to set the normal switching frequency; the switching frequency is modulated with a period signal generated by the 2nd oscillator. The relation between the first oscillator and the 2nd oscillator as followed Fig.4. So the tone energy is evenly spread out, the spread spectrum minimizes the conduction band EMI and therefore eases the system design in meeting stringent EMI requirement. Fig.4 Frequency Hopping UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R103-117 .a UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT FUNCTIONAL DESCRIPTION (Cont.) (4) Constant Output Power Limit When the primary current, across the primary wind of transformer, reaches the limit current, the output GATE driver will be turned off after a small propagation delay tD. This propagation delay will introduce an additional current proportional to tD×VIN/Lp. Since the propagation delay is nearly constant regardless of the input line voltage VIN. Higher input line voltage will result in a larger additional current and hence the output power limit is also higher than that under low input line voltage. To compensate for this output power limit variation across a wide AC input range, the threshold voltage is adjusted by adding a positive ramp. This ramp signal rises from VSENSE-L to VSENSE_H, and then flattens out at VSENSE_H. A smaller threshold voltage forces the output GATE drive to terminate earlier. This reduces the total PWM turn-on time and makes the output power equal to that of low line input. This proprietary internal compensation ensures a constant output power limit for a wide AC input voltage range (90VAC to 264VAC). (5) Protection section The IC takes on more protection functions such as OLP, OVP and OTP etc. In case of those failure modes for continual blanking time, the driver is shut down. At the same time, IC enters auto-restart, VCC power on and driver is reset after VCC power on again. OLP After power on, IC will shutdown driver if over load state occurs for continual TD-OLP. OLP case as followed Fig.5. OVP OVP will shutdown the switching of the power MOSFET whenever VCC>VOVP. The OVP case as followed Fig.6. Fig.5 OLP case Fig.6 OVP case OTP OTP will shut down driver when junction temperature TJ>T(THR) for continual a blanking time. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R103-117 .a UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT FUNCTIONAL DESCRIPTION (Cont.) (6) Driver Output Section The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 16V Zener diode in order to protect power MOSFET transistors against undesirable gate over voltage. In addition to the gate drive control scheme mentioned, the gate drive strength can also be adjusted externally by a resistor connected between VDD and VDDG, the falling edge of the Drain output can be well controlled. It provides great flexibility for system EMI design. (7) Inside power switch MOS transistor Specific power MOS transistor parameter is as “POWER MOS TRANSISTOR SECTION” in electrical characteristics table. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R103-117 .a UCS1604S Preliminary LINEAR INTEGRATED CIRCUIT TYPICAL APPLICATION CIRCUIT CY1 C8 R6 LINE F1 L1 R1 XC1 ZNR1 R2 1 2 4 3 4 BD1 3 T1 10 R3 1 C1 C2 12V/1.33A D2 C4 9 2 L2 1 2 C10 16W 3 NEUT GND 4 D1 R7 2 VCC RG 1 D3 8 7 C3 IC1 6 DRAIN 5 DRAIN 6 R17 VCC-G R14 R10 IC2 FB GND GND 8 7 3 CS 4 Rcs C7 4 1 3 2 C9 R8 IC3 R9 Fig.7 UTC UCS1604S Typical Application Circuit UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R103-117 .a