ID. 06-09-0126 REV. Ø WAFER FABRICATION FLOWCHART – BICMOS PROCESS WAFER FABRICATION FLOWCHART (04/06/09) INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test: Source Accept Test: Quality Contact: FLOW CHART Linear Technology Corporation BICMOS Products All Package Types Linear Technology Corp., Milpitas, CA./ Camas, WA Linear Technology Corporation, Penang, Malaysia or approved assembly subcontractor Linear Technology Corp., Milpitas, CA., Singapore Linear Technology Corp., Milpitas, CA., Singapore Linear Technology Corp., Milpitas, CA., Singapore Naib Girn, LTC Milpitas, CA (408) 432-1900 Ext. 2519 PROCESS STEP INCOMING RAW MATERIAL INSPECTION INITIAL OXIDATION DESCRIPTION WAFERS INSPECTION/TEST CRITERIA QUALITY INSPECTION AND GATE MANUFACTURING PROCESS QUALITY MONITOR / SURVEILLANCE REWORK METHOD & EQUIPMENT SAMPLING PLAN VISUAL: SCRATCHES, PITS, HAZE, CRATERS, DIMPLES, CONTAMINATION 1 X INSPECTION 1.0% AQL TO 2.5 AQL LEVEL 1 OXYGEN/CARBON MEASUREMENT INFRARED SPECTROMETER S/S=2, ACC = 0 RESISTIVITY / CONDUCTIVITY MAGNETRON V/I METER S/S=2, ACC = 0 DIMENSIONAL CALIPERS 2.5% AQL, LEVEL 1 THICKNESS AND TAPER/BOW DIAL THICKNESS GAGE 2.5% AQL, LEVEL 1 ORIENTATION BREAK TEST S/S=1. ACC = 0 SPC TECHNIQUE LOGBOOK C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS EACH BATCH RETICLE C OF C VERIFICATION EACH PLATE CHEMICALS C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS GASES C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS TARGETS C OF C VERIFICATION FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE TREND CHART N-BURIED LAYER MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X PRODUCTION LOG N-BURIED LAYER IMPLANT IMPLANT DOSE CHECK THEMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG LINEAR TECHNOLOGY CORPORATION PAGE 1 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP N-BURIED LAYER DRIVE WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION FURNACE INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE SPC TECHNIQUE LOGBOOK P-BURIED LAYER MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X PRODUCTION LOG P-BURIED LAYER IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG P-BURIED LAYER DRIVE FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE VISUAL UV LAMP INSPECT 2 WAFERS / RUN EPI DEPOSIT EPI ASM INTERFERENCE CONTRAST MICROSCOPE 4 POINT PROBE 2 READING/PASS X Bar & MOVING R FTIR 1 WAFER/LOT LOGBOOK VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE TREND CHART Rs EPI THICKNESS PAD OXIDATION FURNACE HV P-WELL MASK RESIST MASK/ HF ETCH BATH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG HV P-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG P+ ISOLATION MASK RESIST MASK/ HF ETCH BATH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG P+ ISOLATION IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG N+ SINKER MASK RESIST MASK/ HF ETCH BATH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG N+ SINKER IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT LOGBOOK STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG LINEAR TECHNOLOGY CORPORATION PAGE 2 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE N-WELL MASK RESIST MASK FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG LV N-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG P-WELL MASK RESIST MASK FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG LV P-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG NITRIDE DEPOSITION LPCVD NITRIDE DEPOSITION VISUAL UV LAMP 100%, MORE THAN 2 COLOR CHANGE IS FAIL TREND CHART 10X MICROSCOPE 2 WAFERS/CYCLE <5 DEFECTS/PER FIELD OF VIEW NITRIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE WELL/SINKER DRIVE FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK ACTIVE MASK RESIST MASK FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG PLASMA ETCH P FIELD IMPLANT MASK RESIST MASK VISUAL INSPECTION MICROSCOPE 400X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG BORON FIELD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS / LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG LOCOS OXIDE FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK NANOSPEC 3 WAFERS/CYCLE OXIDE THICKNESS STRIP NITRIDE SACRIFICIAL OXIDATION STRIP OXIDE H3PO4 ETCH BATH VISUAL FURNACE HF ETCH BATH LINEAR TECHNOLOGY CORPORATION UV LAMP MICROSCOPE INSPECTION TREND CHART LOGBOOK THICKNESS NANOSPEC 2 WAFERS /LOT VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE TREND CHART VISUAL UV LAMP MICROSCOPE INSPECTION THICKNESS NANOSPEC LOGBOOK 2 WAFERS /LOT PAGE 3 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP THICK GATE OXIDE WAFER FABRICATION FLOWCHART – BICMOS PROCESS INSPECTION/TEST CRITERIA DESCRIPTION FURNACE METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE TREND CHART THIN OXIDE MASK RESIST MASK/ HF ETCH BATH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PRODUCTION LOG THIN GATE OXIDE FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK OXIDE THICKNESS ELLIPSOMETER 3 WAFERS/CYCLE TREND CHART VISUAL UV LAMP 100%, MORE THAN 2 COLOR CHANGE IS FAIL 10X MICROSCOPE 3 WAFERS/CYCLE <5 DEFECTS/PER FIELD OF VIEW POLY THICKNESS NANOSPEC 3 WAFERS/CYCLE POLY 1 DEPOSITION LPCVD DEPOSITION TREND CHART PRODUCTION LOG VT MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X LT THRESHOLD ADJUST IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X VTHV IMPLANT MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X HV THRESHOLD ADJUST IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X WSIX CVD REFLECTIVITY NANOSPEC 1 WF PER BATCH LOT 10X MICROSCOPE 2 WAFERS/RUN <5 DEFECTS PER FIELD OF VIEW Rs Four Point Probe 1 WF PER BATCH LOT FINAL INSPECT UV and MICROSCOPE PRODUCTION 5 WAFERS LOG “S” PATTERN SCAN AT 200X AND 1000X CRITICAL DIMENSION SEM 1 WAFER (5 SPOTS) X BAR & R FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X POLY 1 MASK RESIST MASK PLASMA ETCH NPN BASE MASK RESIST MASK NPN BASE IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X LINEAR TECHNOLOGY CORPORATION TREND CHART PRODUCTION LOG PRODUCTION LOG TREND CHART PRODUCTION LOG TREND CHART PRODUCTION LOG TREND CHART PRODUCTION LOG PAGE 4 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP CAP OXIDE DEPOSITION POLY 2 DEPOSITION WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION INSPECTION/TEST CRITERIA OXIDE DEPOSITION VISUAL LPCVD DEPOSITION METHOD & EQUIPMENT SAMPLING PLAN UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER THICKNESS ELLIPSOMETER 3 WAFERS/CYCLE VISUAL UV LAMP 100%, MORE THAN 2 COLOR CHANGE IS FAIL 10X MICROSCOPE 2 WAFERS/CYCLE <5 DEFECTS/PER FIELD OF VIEW THICKNESS NANOSPEC 3 WAFERS/CYCLE SPC TECHNIQUE LOGBOOK X-BAR & R TREND CHART PRODUCTION LOG POLY 2 MASK RESIST MASK PLASMA ETCH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X WSIX ANNEAL FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER PLDD MASK RESIST MASK FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PLDD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X NLDD MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X ANTI PUNCH THROUGH IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART NLDD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X SPACER DEPOSITION OXIDE DEPOSITION VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN THICKNESS NANOSPEC 1 WAFER/CYCLE PRODUCTION LOG TREND CHART PRODUCTION LOG PRODUCTION LOG PRODUCTION LOG LOGBOOK TREND CHART SPACER ANNEAL FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER SPACER ETCH PLASMA ETCH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X OXIDE MEASUREMENT NANOSPEC 2 WAFER (3 SPOTS) P+ S/D MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X P+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAFE 2 WAFERS/LOT VISUAL MICROSCOPE 2 WAFERS/LOT LINEAR TECHNOLOGY CORPORATION LOGBOOK LOGBOOK PRODUCTION LOG X BAR & R PRODUCTION LOG TREND CHART PAGE 5 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE PRODUCTION LOG STRIP RESIST RF PLASMA SULFURIC ACID FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X N+ S/D IMPLANT MASK RESIST MASK DEVELOP INSPECT UV and MICROSCOPE 5 WAFERS 5 SPOTS AT 100X N+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT VISUAL MICROSCOPE 2 WAFERS/LOT FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN THICKNESS NANOSPEC 1 WAFER/CYCLE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK UV LAMP 3 WAFERS/RUN LOGBOOK STRIP RESIST RF PLASMA SULFURIC ACID THIN OX DEPOSITION OXIDE DEPOSITION VISUAL S/D ANNEAL FURNACE BPSG DEPOSITION OXIDE DEPOSITION VISUAL PRODUCTION LOG TREND CHART PRODUCTION LOG LOGBOOK TREND CHART TREND CHART ANNEAL FURNACE THIN FILM DEPOSITION PVD SPUTTER THIN FILM RESISTOR MASK RESIST MASK THICKNESS NANOSPEC 3 WAFERS/CYCLE WT% B WT% P BIORAD WEEKLY VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK 10X MICROSCOPE 2 WAFERS/RUN <5 DEFECTS PER FIELD OF VIEW TREND CHART Rs FOUR POINT PROBE 1 WAFERS/LOT FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X AND 500X VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN THICKNESS NANOSPEC 1 WAFER/CYCLE FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X PLASMA ETCH SI-RICH OXIDE CONTACT MASK OXIDE DEPOSITION VISUAL RESIST MASK PLASMA ETCH LOGBOOK TREND CHART THIN FILM CONTACT MASK RESIST MASK HF ETCHANT BATH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X TIN BARRIER PVD SPUTTER VISUAL 10X MICROSCOPE 2 WAFERS/RUN <5 DEFECTS PER FIELD OF VIEW Rs FOUR POINT PROBE 1 WAFERS/LOT LINEAR TECHNOLOGY CORPORATION PRODUCTION LOG PRODUCTION LOG PRODUCTION LOG TREND CHART PAGE 6 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE BARRIER ANNEAL FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER METAL-1 DEPOSITION PVD SPUTTER VISUAL UV LAMP 2 WAFERS/RUN 10X MICROSCOPE 2 WAFERS/RUN <5 DEFECTS PER FIELD OF VIEW Rs FOUR POINT PROBE 1 WAFERS/LOT FINAL INSPECT UV and MICROSCOPE PRODUCTION 5 WAFERS LOG “S” PATTERN SCAN AT 200X AND 1000X METAL MASK RESIST MASK PLASMA ETCH ILD 1 OXIDE DEPOSITION VISUAL SOG SPIN-ON-GLASS LOGBOOK LOGBOOK TREND CHART UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN LOGBOOK THICKNESS NANOSPEC 1 WAFER/CYCLE TREND CHART STRESS STRESS GAGE 1 WAFER/CYCLE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN THICKNESS NANOSPEC 1 WAFER/CYCLE LOGBOOK TREND CHART SOG ANNEAL FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER SOG ETCHBACK PLASMA ETCH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X OXIDE MEASUREMENT NANOSPEC 2 WAFER (3 SPOTS) UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN LOGBOOK THICKNESS NANOSPEC 1 WAFER/CYCLE TREND CHART STRESS STRESS GAGE 1 WAFER/CYCLE FINAL INSPECT UV and MICROSCOPE PRODUCTION 5 WAFERS LOG “S” PATTERN SCAN AT 200X AND 1000X VISUAL UV LAMP 2 WAFERS/RUN 10X MICROSCOPE 2 WAFERS/RUN <5 DEFECTS PER FIELD OF VIEW Rs FOUR POINT PROBE 1 WAFERS/LOT PRODUCTION 5 WAFERS LOG “S” PATTERN SCAN AT 200X AND 1000X ILD 2 VIA MASK OXIDE DEPOSITION VISUAL RESIST MASK PLASMA ETCH METAL-2 DEPOSITION PVD SPUTTER METAL MASK RESIST MASK PLASMA ETCH FINAL INSPECT UV and MICROSCOPE PASSIVATION DEPOSITION OXIDE / PEN VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN THICKNESS NANOSPEC 1 WAFER/CYCLE INDEX OF REFRACTION ELLIPSOMETER 1 WAFER/WEEK DEPOSITION LINEAR TECHNOLOGY CORPORATION LOGBOOK PRODUCTION LOG X BAR & R LOGBOOK LOGBOOK TREND CHART PAGE 7 OF 8 ID. 06-09-0126 FLOW CHART REV. Ø PROCESS STEP WAFER FABRICATION FLOWCHART – BICMOS PROCESS DESCRIPTION INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE PRODUCTION LOG PAD MASK RESIST MASK PLASMA ETCH FINAL INSPECT UV and MICROSCOPE 5 WAFERS “S” PATTERN SCAN AT 200X ALLOY FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 25 DEFECTS PER WAFER LOGBOOK ELECTRICAL TEST EVALUATE ELECTRICAL PARAMETERS 100% LOGBOOK LINEAR TECHNOLOGY CORPORATION PAGE 8 OF 8