UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET -2.8A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES * Very High Density Cell Design for Low On-Resistance * Very Good Thermal and Electrical Capabilities SYMBOL ORDERING INFORMATION Ordering Number Note: UT2301ZG-AE3-R Pin Assignment: S: Source G: Gate Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel D: Drain MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-281.J UT2301Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.8 A Pulsed Drain Current (Note 2, 3) IDM -10 A Total Power Dissipation (Note 4) PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Pulse width ≤300µs, duty cycle ≤2 % 4. Surface mounted on 1 in 2 copper pad of FR4 board. THERMAL DATA (Note) PARAMETER Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 5%sec SYMBOL θJA RATING 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (ID=-2.3A , TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-16V, VGS=0V VGS=±8V, VDS=0V -20 VGS(TH) VDS=VGS, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=-5 V, VGS=-10V VDS=-5 V, ID=-2.8A -0.45 RDS(ON) On-State Drain Current ID(ON) Forward Tran conductance gFS DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-6V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note) QG VDS=-6V, VGS=-4.5V, Gate-Source Charge QGS ID=-2.8A Gate-Drain Charge QGD Turn-ON Delay Time (Note) tD(ON) VDD=-6V, VGEN=-4.5V, Turn-ON Rise Time tR ID=-1A, RG=6Ω, RL=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note) VSD IS=-1.6 A, VGS=0 V Maximum Diode Forward Current IS Notes: Pulse width ≤300µs, Duty Cycle ≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNITS -1.0 ±5 V μA μA 6.5 V mΩ mΩ A S 447 127 80 pF pF pF 95 122 130 190 -6 5.4 0.8 1.1 5 19 95 65 -0.8 10 25 60 110 80 nC nC nC ns ns ns ns -1.2 -1.6 V A 2 of 4 QW-R502-281.J UT2301Z Power MOSFET SWITCHING TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-281.J UT2301Z Power MOSFET TYPITAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 10 15 20 25 30 5 Drain-Source Breakdown Voltage, BVDSS(V) 0 Drain-Source On-State Resistance Characteristics 4.0 Drain Current vs. Source to Drain Voltage 1.2 3.5 1.0 3.0 ID=-2.8A VGS=-4.5V 2.5 2.0 1.5 ID=-2.0A VGS=-2.5V 1.0 Drain Current, ID (A) Drain Current, ID (A) 0.2 0.4 0.6 0.8 1.0 Gate Threshold Voltage, VTH (V) 0.8 0.6 0.4 0.2 0.5 0 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0.6 0.2 0.4 0.8 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-281.J