Product Family Data Sheet Rev. 1.4 2016.06.01 High Voltage LED Series Chip on Board LC026D High efficacy COB LED package well-suited for use in spotlight applications Features & Benefits • Chip on Board (COB) solution makes it easy to design in • Simple assembly reduces manufacturing cost • Low thermal resistance • InGaN/GaN MQW LED with long time reliability Applications • Spotlight / Downlight • LED Retrofit Bulbs • Outdoor Illumination 1# 2 Table of Contents 1. Characteristics ----------------------- 3 2. Product Code Information ----------------------- 5 3. Typical Characteristics Graphs ----------------------- 9 4. Outline Drawing & Dimension ----------------------- 12 5. Reliability Test Items & Conditions ----------------------- 13 6. Label Structure ----------------------- 14 7. Packing Structure ----------------------- 15 8. Precautions in Handling & Use ----------------------- 17 3 1. Characteristics a) Absolute Maximum Rating Item Symbol Rating Unit Condition Ambient / Operating Temperature Ta -40 ~ +105 ºC - Storage Temperature Tstg -40 ~ +120 ºC - LED Junction Temperature TJ 140 ºC - Case Temperature Tc 105 ºC Forward Current IF 1290 mA - Power Dissipation PD 69 W - ESD (HBM) - ±2 kV - ESD (MM) - ±0.5 kV - b) Electro-optical Characteristics (IF = 720 mA, TJ = 85 ºC) Item Unit Rank Min. Typ. Max. Forward Voltage (VF) V YZ 31.8 34.6 37.5 5 80 - - Color Rendering Index (Ra) 7 90 Thermal Resistance (junction to chip point) ºC/W - 1.0 - Beam Angle º - 115 - Nominal Power W 24.9 Notes: 1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C) 2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1 3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range. 4 c) Luminous Flux Characteristics CRI (Ra) Min. (IF = 720 mA) Nominal CCT (K) Flux Rank Flux Bin K0 Flux @ Tc = 85 °C (lm) Min. Typ. Max. K0 3064 3225 - D1 D1 3225 3386 - K2 K2 3220 3389 - D1 D1 3389 3558 - K3 K3 3314 3488 - D1 D1 3488 3663 - K3 K3 3380 3558 - D1 D1 3558 3736 - K4 K4 3409 3588 - D1 D1 3588 3767 - K4 K4 3409 3588 - D1 D1 3588 3767 - K3 K3 3380 3558 - D1 D1 3558 3736 - Flux Rank Flux Bin J6 2700 3000 3500 80 4000 5000 5700 6500 CRI (Ra) Min. Nominal CCT (K) Flux @ Tc = 85 °C (lm) Min. Typ. Max. J6 2622 2760 - D1 D1 2760 2898 - J7 J7 2758 2903 - D1 D1 2903 3048 - J8 J8 2840 2990 - D1 D1 2990 3139 - J8 J8 2899 3051 - D1 D1 3051 3204 - 2700 90 3000 3500 4000 Notes: 1) The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = 85 °C). 2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1 5 2. Product Code Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S P H W H A H D N G 2 5 Y Z W 3 K 0 Digit PKG Information Code Samsung Package High Power SPH Color WH Product Version A Form Factor HD 9 Lens Type N No lens 10 Internal Code G LC026D 11 Chip Type 2 12 CRI & Sorting Temperature 1 2 3 4 5 6 7 8 13 14 15 CCT (K) 16 17 Forward Voltage (V) Specification Warm White COB 5 Min. 80 (85℃) 7 Min. 90 (85℃) YZ 31.8~37.5 W 2700K V 3000K U 3500K T 4000K R 5000K Q 5700K P 6500K 2 MacAdam 2-step 3 MacAdam 3-step MacAdam Step 18 Luminous Flux J6 Min. 2600 J7 Min. 2700 J8 Min. 2800 K0 Min. 3000 K2 Min.3200 K3 Min. 3300 K4 D1 Min. 3400 Add rank 6 a) Binning Structure CRI (Ra) Min. (IF = 720 mA, TJ = 85 ºC) Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNG25YZW2K0 W2 W2 SPHWHAHDNG25YZW3K0 W3 W3 SPHWHAHDNG25YZW2D1 W2 W2 SPHWHAHDNG25YZW3D1 W3 W3 SPHWHAHDNG25YZV2K2 V2 V2 SPHWHAHDNG25YZV3K2 V3 V3 SPHWHAHDNG25YZV2D1 V2 V2 SPHWHAHDNG25YZV3D1 V3 V3 SPHWHAHDNG25YZU2K3 U2 U2 SPHWHAHDNG25YZU3K3 U3 U3 SPHWHAHDNG25YZU2D1 U2 U2 SPHWHAHDNG25YZU3D1 U3 U3 SPHWHAHDNG25YZT2K3 T2 T2 SPHWHAHDNG25YZT3K3 T3 T3 SPHWHAHDNG25YZT2D1 T2 T2 SPHWHAHDNG25YZT3D1 T3 T3 R3 R3 Product Code Flux Rank Flux Range (Φv, lm) K0 3064 ~ D1 3225 ~ K2 3220 ~ D1 3389~ K3 3314 ~ D1 3488 ~ K3 3380 ~ D1 3588 ~ K4 3409 ~ D1 3588 ~ K4 3409 ~ D1 3588 ~ K3 3380 ~ D1 3558 ~ YZ 2700 M VF Rank 3000 YZ 3500 YZ 4000 YZ SPHWHAHDNG25YZR3K4 5000 YZ SPHWHAHDNG25YZR3D1 SPHWHAHDNG25YZQ3K4 5700 YZ Q3 Q3 SPHWHAHDNG25YZQ3D1 SPHWHAHDNG25YZP3K3 6500 YZ SPHWHAHDNG25YZP3D1 P3 P3 7 CRI (Ra) Min. Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNG27YZW2J6 W2 W2 SPHWHAHDNG27YZW3J6 W3 W3 SPHWHAHDNG27YZW2D1 W2 W2 SPHWHAHDNG27YZW3D1 W3 W3 SPHWHAHDNG27YZV2J7 V2 V2 SPHWHAHDNG27YZV3J7 V3 V3 SPHWHAHDNG27YZV2D1 V2 V2 SPHWHAHDNG27YZV3D1 V3 V3 SPHWHAHDNG27YZU2J8 U2 U2 SPHWHAHDNG27YZU3J8 U3 U3 SPHWHAHDNG27YZU2D1 U2 U2 SPHWHAHDNG27YZU3D1 U3 U3 SPHWHAHDNG27YZT2J8 T2 T2 SPHWHAHDNG27YZT3J8 T3 T3 SPHWHAHDNG27YZT2D1 T2 T2 SPHWHAHDNG27YZT3D1 T3 T3 Product Code 2700 VF Rank Flux Rank Flux Range (Φv, lm) J6 2622 ~ D1 2760 ~ J7 2758 ~ D1 2903 ~ J8 2840 ~ D1 2990 ~ J8 2899 ~ D1 3051 ~ YZ 90 3000 ` YZ 3500 YZ 4000 YZ 8 b) Chromaticity Region & Coordinates (IF = 720 mA, TJ = 85 ºC) θ CIE x,y MacAdam Ellipse (W2, W3) MacAdam Ellipse (V2, V3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4578 0.4101 53.70 0.0054 0.0028 2-step 0.4338 0.403 53.22 0.0056 0.0027 3-step 0.4578 0.4101 53.70 0.0081 0.0042 3-step 0.4338 0.4030 53.22 0.0083 0.0041 Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4073 0.3917 54.00 0.0062 0.0028 2-step 0.3818 0.3797 53.72 0.0063 0.0027 3-step 0.4073 0.3917 54.00 0.0093 0.0041 3-step 0.3818 0.3797 53.72 0.0094 0.0040 MacAdam Ellipse (U2, U3) MacAdam Ellipse (T2, T3) MacAdam Ellipse (R3) MacAdam Ellipse (Q3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 3-step 0.3447 0.3553 59.62 0.0082 0.0035 3-step 0.3287 0.3417 59.0950 0.0075 0.0032 MacAdam Ellipse (P3) Step CIE x CIE y θ a b 3-step 0.3123 0.3282 58.5700 0.0067 0.0029 Note: Samsung maintains measurement tolerance of: Cx, Cy = ±0.005 9 3. Typical Characteristics Graphs a) Spectrum Distribution (IF = 720 mA, TJ = 85 ºC) CCT: 2700 K (80 CRI) CCT: 3000 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 Wavelength CCT: 3500 K (80 CRI) 60 40 20 0 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) 80 100 80 60 40 20 0 400 500 Wavelength 600 700 800 Wavelength CCT: 5000 K (80 CRI) CCT: 5700 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 500 600 Wavelength 700 800 Relative Emission Intensity(%) Relative Intensity vs. Wavelength Relative Emission Intensity(%) 800 Relative Intensity vs. Wavelength 100 400 700 CCT: 4000 K (80 CRI) Relative Intensity vs. Wavelength 400 600 Wavelength(nm) 100 80 60 40 20 0 400 500 600 Wavelength 700 800 10 CCT: 6500 K (80 CRI) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Wavelength b) Forward Current Characteristics (TJ = 85 ºC) Forward Voltage vs. Forward Current 40 250 Forward Voltage(%) Relative Luminous Flux(%) Relative luminous Flux vs. Forward Current 200 150 100 50 0 38 36 34 32 30 0 0.3 0.6 0.9 1.2 1.5 1.8 0 0.3 Forward Current(A) 0.6 0.9 1.2 1.5 1.8 Forward Current(A) C) Temperature Characteristics (IF = 720mA) Forward Voltage vs. Temperature 105 36.5 Forward Voltage(V) Relative Luminous Flux(%) Relative Luminous Flux vs. Temperature 100 95 90 85 36.0 35.5 35.0 34.5 34.0 33.5 33.0 80 20 40 60 Tc(℃) 80 100 20 40 60 Tc(℃) 80 100 11 d) Color Shift Characteristics △CIE x,△CIE y (TJ = 85 ºC, IF = 720mA, CRI80+) vs. Forward Current △CIEx,△CIEy vs. Temperature 0 △CIE x,△ CIE y △CIE x,△ CIE y 0 -0.01 -0.02 -0.03 △CIE x -0.04 △ CIE y 0.30 0.60 0.90 1.20 1.50 1.80 -0.03 ΔCIE x -0.04 ΔCIE y e) Beam Angle Characteristics (IF = 720 mA, TJ = 85 ºC) 1.2 1 0.8 0.6 0.4 0.2 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 Angle(°) f) Derating Characteristics Derating Curve 1400 1200 1000 800 600 400 200 0 0 20 40 60 Tc [ ℃ ] 80 20 40 60 Tc(℃) Forward Current(A) Relative Luminous Intensity -0.02 -0.05 -0.05 0.00 If [ mA ] -0.01 100 120 80 100 12 4. Outline Drawing & Dimension Tc 1. Unit: mm 2. Tolerance: ± 0.3 mm Note: Item Dimension Tolerance Unit Length 19.0 ±0.15 mm Width 19.0 ±0.15 mm Height 1.50 ±0.30 mm Light Emitting Surface (LES) Diameter 14.5 ±0.15 mm Denoted product information above is only an example ( LC026D, CRI80+, 3000K ) 13 5. Reliability Test Items & Conditions a) Test Items Test Item Test Condition Test Hour / Cycle High Temperature Humidity Life Test 60 ºC, 90 % RH,, DC Derating, IF 1000 h High Temperature Life Test 85 ºC, DC Derating, IF 1000 h Low Temperature Life Test -40 ºC, DC , IF = 1290 mA 1000 h Pulsed Operating Life Test 55 ℃, Pulse width 100 ㎲, duty cycle 3 % 1000 h High Temperature Storage 120 ºC 1000 h Low Temperature Storage -40 ºC 1000 h Temperature Humidity Storage 60 ºC, 90% RH 1000h Thermal Cycle -45 ºC / 15 min ↔ 125 ºC / 15 min temperature change in 5 min 500 cycles Temperature Cycle On/Off Test -40 ºC / 85 ºC each 20 min, 30 min transfer power on/off each 5 min, DC Derating, IF = max 100 cycles R1: 10 MΩ R2: 1.5 kΩ C: 100 pF ESD (HBM) V: 5 times ±2 kV R1: 10 MΩ R2: 0 kΩ ESD (MM) 5 times C: 200 pF V: ±0.2 kV Vibration Test 20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g) 80 ~ 2 kHz (max. 20 g) min. frequency ↔ max. frequency 4 min transfer 4 times Mechanical Shock Test 1500 g, 0.5 ms each of the 6 surfaces (3 axis x 2 sides) 5 times Sulfur Resistance 25 °C, 75%, H2S 15 ppm 504h b) Criteria for Judging the Damage Item Symbol Test Condition (Tc = 25 ºC) Forward Voltage VF Luminous Flux Φv Limit Min. Max. IF = 720 mA L.S.L. * 0.9 U.S.L. * 1.1 IF = 720 mA L.S.L * 0.7 U.S.L * 1.3 14 6. Label Structure a) Label Structure ⓐⓑⓒⓓⓔⓕ YZW3K0 Bin Code SPHWHAHDNG25YZW3K0 YZW3K0 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Product Code G4AZC4001 / 1001 / xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Lot Number Note: Denoted bin code and product code above is only an example (see description on page 5) Bin Code: ⓐⓑ: Forward Voltage bin ⓒⓓ: Chromaticity bin ⓔⓕ: Luminous Flux bin (refer to page 11) (refer to page 9-10) (refer to page 6) b) Lot Number The lot number is composed of the following characters: YZW3K0 SPHWHAHDNG25YZW3K0 YZW3K0 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ① ③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs ① ② ③ ④ ⑤ ⑥⑦⑧⑨ ⓐⓑⓒ : Production site (S: Giheung, Korea, : 4 : Product state : Year : Month : Day (1~9, A, B~V) : Product serial number (001 ~ 999) G: Tianjin, China) (LED) (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample) (Z: 2015, A: 2016, B: 2017…) (1~9, A, B, C) 15 7. Packing Structure Packing material Tray Aluminum Bag Inner Box Outer Box Max. quantity in pcs of COB 20 40(2 trays) 160 1600 Length 160 210 230 476 Dimension(mm) Width 180 241 84 445 a) Packing Structure Label Label Height 10 260 272 Tolerance 1.0 10 2 5 16 b) Tray ① Cover c) Aluminum Vinyl Packing Bag ② Body 17 8. Precautions in Handling & Use 1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the device. 2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature 0~40 ºC, 0~90 % RH). 3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be: a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or b. Stored at <10 % RH 4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. 5) Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC. 6) Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required. 7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current. 8) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical properties of materials used in luminaires and they must be carefully selected. 9) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead, please pick at the handling area as indicated below. Legal and additional information. About Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies, redefining the worlds of TVs, smartphones, wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems and semiconductors. We are also leading in the Internet of Things space through, among others, our Digital Health and Smart Home initiatives. We employ 307,000 people across 84 countries. To discover more, please visit our official website at www.samsung.com and our official blog at global.samsungtomorrow.com. Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specifications and designs are subject to change without notice. Non-metric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Samsung Electronics Co., Ltd. 95, Samsung 2-ro Giheung-gu Yongin-si, Gyeonggi-do, 446-711 KOREA www.samsungled.com