62
7
BFU530W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323
package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
Maximum stable gain 18.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB
collector-base voltage
open emitter
-
-
24
V
VCE
collector-emitter voltage
open base
-
-
12
V
shorted base
-
-
24
V
VEB
emitter-base voltage
open collector
-
-
2
V
IC
collector current
-
10
40
mA
mW
Ptot
total power dissipation
Tsp 87 C
-
-
450
hFE
DC current gain
IC = 10 mA; VCE = 8 V
60
95
200
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
-
0.68
-
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 900 MHz
-
11
-
GHz
[1]
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
Table 1.
Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
[2]
Min
Typ
Max
Unit
-
18.5
-
dB
Gp(max)
maximum power gain
IC = 10 mA; VCE = 8 V; f = 900 MHz
NFmin
minimum noise figure
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
-
0.6
-
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 15 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
-
10
-
dBm
[1]
Tsp is the temperature at the solder point of the collector lead.
[2]
If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Graphic symbol
DDD
3. Ordering information
Table 3.
Ordering information
Type number
BFU530W
OM7960
[1]
Package
Name
Description
-
plastic surface-mounted package; 3 leads
-
Version
SOT323
Customer evaluation kit for BFU520W, BFU530W and BFU550W
[1]
-
The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4.
Marking
Type number
Marking
Description
BFU530W
ZB*
* = t : made in Malaysia
* = w : made in China
BFU530W
Product data sheet
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Rev. 1 — 13 January 2014
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
5. Design support
Table 5.
Available design support
Download from the BFU530W product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS
yes
Based on Mextram device model.
SPICE model
yes
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
Solder pattern
yes
Application notes
yes
See Section 3 and Section 10.
See Section 10.1 and Section 10.2.
6. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCB
collector-base voltage
open emitter
-
30
V
VCE
collector-emitter voltage
open base
-
16
V
shorted base
-
30
V
open collector
VEB
emitter-base voltage
-
3
V
IC
collector current
-
65
mA
Tstg
storage temperature
65
+150
C
VESD
electrostatic discharge voltage
Human Body Model (HBM) According to JEDEC
standard 22-A114E
-
150
V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
-
2
kV
7. Recommended operating conditions
Table 7.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB
collector-base voltage
open emitter
-
-
24
V
VCE
collector-emitter voltage
open base
-
-
12
V
shorted base
-
-
24
V
open collector
-
-
2
V
-
-
40
mA
VEB
emitter-base voltage
IC
collector current
Pi
input power
Tj
junction temperature
Ptot
[1]
BFU530W
Product data sheet
Characteristics
ZS = 50
total power dissipation
Tsp 87 C
[1]
-
-
10
dBm
40
-
+150
C
-
-
450
mW
Tsp is the temperature at the solder point of the collector lead.
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Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
3 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
8. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
[1]
Conditions
[1]
thermal resistance from junction to solder point
Typ
Unit
140
K/W
Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb:
Tsp = Tamb + P Rth(sp-a)
With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and
ambient. Rth(sp-a) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
DDD
3WRW
P:
Fig 1.
7VS&
Power derating curve
9. Characteristics
Table 9.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min Typ
Max Unit
V(BR)CBO collector-base breakdown voltage
IC = 100 nA; IE = 0 mA
24
-
-
V
V(BR)CEO collector-emitter breakdown voltage
IC = 150 nA; IB = 0 mA
12
-
-
V
-
10
40
mA
nA
IC
collector current
ICBO
collector-base cut-off current
IE = 0 mA; VCB = 8 V
-
<1
-
hFE
DC current gain
IC = 10 mA; VCE = 8 V
60
95
200
Ce
emitter capacitance
VEB = 0.5 V; f = 1 MHz
-
0.84 -
pF
Cre
feedback capacitance
VCE = 8 V; f = 1 MHz
-
0.43 -
pF
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
-
0.68 -
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 900 MHz
-
11
GHz
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
-
© NXP B.V. 2014. All rights reserved.
4 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
Table 9.
Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol
Gp(max)
Parameter
maximum power gain
Conditions
f = 433 MHz; VCE = 8 V
-
15.5 -
dB
IC = 10 mA
-
23.5 -
dB
IC = 15 mA
-
24
-
dB
IC = 1 mA
-
12.5 -
dB
IC = 10 mA
-
18.5 -
dB
IC = 15 mA
-
19
-
dB
IC = 1 mA
-
10.5 -
dB
IC = 10 mA
-
12.5 -
dB
IC = 15 mA
-
12.5 -
dB
IC = 1 mA
-
10
-
dB
IC = 10 mA
-
21.5 -
dB
IC = 15 mA
-
22
-
dB
IC = 1 mA
-
8.5
-
dB
IC = 10 mA
-
16
-
dB
IC = 15 mA
-
16
-
dB
IC = 1 mA
-
5
-
dB
IC = 10 mA
-
10.5 -
dB
IC = 15 mA
-
10.5 -
dB
IC = 1 mA
-
0.5
-
dB
IC = 10 mA
-
0.8
-
dB
IC = 15 mA
-
0.9
-
dB
IC = 1 mA
-
0.6
-
dB
IC = 10 mA
-
0.9
-
dB
IC = 15 mA
-
1.0
-
dB
IC = 1 mA
-
0.8
-
dB
IC = 10 mA
-
1.0
-
dB
IC = 15 mA
-
1.1
-
dB
f = 1800 MHz; VCE = 8 V
insertion power gain
Max Unit
IC = 1 mA
f = 900 MHz; VCE = 8 V
s212
Min Typ
[1]
[1]
[1]
f = 433 MHz; VCE = 8 V
f = 900 MHz; VCE = 8 V
f = 1800 MHz; VCE = 8 V
NFmin
minimum noise figure
f = 433 MHz; VCE = 8 V; S = opt
f = 900 MHz; VCE = 8 V; S = opt
f = 1800 MHz; VCE = 8 V; S = opt
BFU530W
Product data sheet
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Rev. 1 — 13 January 2014
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5 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
Table 9.
Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Gass
associated gain
f = 433 MHz; VCE = 8 V; S = opt
Min Typ
Max Unit
IC = 1 mA
-
22.5 -
dB
IC = 10 mA
-
22.5 -
dB
IC = 15 mA
-
23
-
dB
IC = 1 mA
-
14.5 -
dB
IC = 10 mA
-
16.5 -
dB
IC = 15 mA
-
17
-
dB
IC = 1 mA
-
8.5
-
dB
IC = 10 mA
-
11
-
dB
IC = 15 mA
-
11
-
dB
IC = 10 mA
-
6
-
dBm
IC = 15 mA
-
9.5
-
dBm
IC = 10 mA
-
7
-
dBm
IC = 15 mA
-
10
-
dBm
IC = 10 mA
-
8
-
dBm
IC = 15 mA
-
10.5 -
dBm
IC = 10 mA
-
16
-
dBm
IC = 15 mA
-
19
-
dBm
IC = 10 mA
-
17
-
dBm
IC = 15 mA
-
20
-
dBm
IC = 10 mA
-
18
-
dBm
IC = 15 mA
-
20
-
dBm
f = 900 MHz; VCE = 8 V; S = opt
f = 1800 MHz; VCE = 8 V; S = opt
PL(1dB)
output power at 1 dB gain compression
f = 433 MHz; VCE = 8 V; ZS = ZL = 50
f = 900 MHz; VCE = 8 V; ZS = ZL = 50
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50
IP3o
output third-order intercept point
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50
f1 = 1800 MHz; f2 = 1801 MHz;
VCE = 8 V; ZS = ZL = 50
[1]
If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
BFU530W
Product data sheet
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Rev. 1 — 13 January 2014
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6 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
9.1 Graphs
DDD
,&
P$
9&(9
Tamb = 25 C.
(1) IB = 25 A
(2) IB = 75 A
(3) IB = 125 A
(4) IB = 175 A
(5) IB = 225 A
(6) IB = 275 A
(7) IB = 325 A
Fig 2.
Collector current as a function of collector-emitter voltage; typical values
DDD
K)(
DDD
K)(
,&P$
Tamb = 25 C.
,&P$
VCE = 8 V.
(1) VCE = 3.0 V
(1) Tamb = 40 C
(2) VCE = 8.0 V
(2) Tamb = +25 C
(3) Tamb = +125 C
Fig 3.
DC current gain as function of collector
current; typical values
BFU530W
Product data sheet
Fig 4.
DC current gain as function of collector
current; typical values
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© NXP B.V. 2014. All rights reserved.
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
,&
P$
DDD
,%
P$
9%(9
Tamb = 25 C.
9%(9
Tamb = 25 C.
(1) VCE = 3.0 V
(1) VCE = 3.0 V
(2) VCE = 8.0 V
(2) VCE = 8.0 V
Fig 5.
Collector current as a function of base-emitter
voltage; typical values
DDD
,%5
$
Fig 6.
Base current as a function of base-emitter
voltage; typical values
DDD
&&
I)
9(%9
9&%9
IC = 0 mA; f = 1 MHz; Tamb = 25 C.
VCE = 3 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +125 C
Fig 7.
Reverse base current as a function of
emitter-base voltage; typical values
BFU530W
Product data sheet
Fig 8.
Collector capacitance as a function of
collector-base voltage; typical values
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© NXP B.V. 2014. All rights reserved.
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
I7
*+]
,&P$
Tamb = 25 C.
(1) VCE = 3.3 V
(2) VCE = 5.0 V
(3) VCE = 8.0 V
(4) VCE = 12.0 V
Fig 9.
Transition frequency as a function of collector current; typical values
DDD
*
G%
DDD
*
G%
06*
06*
*SPD[
*SPD[
_V
06*
_
I0+]
IC = 10 mA; VCE = 8 V; Tamb = 25 C.
Product data sheet
I0+]
IC = 15 mA; VCE = 8 V; Tamb = 25 C.
Fig 10. Gain as a function of frequency; typical values
BFU530W
06*
_V_
Fig 11. Gain as a function of frequency; typical values
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Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
9 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
_V_
G%
DDD
*SPD[
G%
,&P$
VCE = 8 V; Tamb = 25 C.
,&P$
VCE = 8 V; Tamb = 25 C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(1) f = 300 MHz
(4) f = 900 MHz
(2) f = 433 MHz
(5) f = 1800 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
BFU530W
Product data sheet
Fig 13. Maximum power gain as a function of collector
current; typical values
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
_V_
G%
DDD
*SPD[
G%
9&(9
IC = 15 mA; Tamb = 25 C.
9&(9
IC = 15 mA; Tamb = 25 C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(1) f = 300 MHz
(4) f = 900 MHz
(2) f = 433 MHz
(5) f = 1800 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
BFU530W
Product data sheet
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 10 mA
(2) IC = 15 mA
Fig 16. Input reflection coefficient (s11); typical values
DDD
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 10 mA
(2) IC = 15 mA
Fig 17. Output reflection coefficient (s22); typical values
BFU530W
Product data sheet
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Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
12 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
,3R
G%P
DDD
3/G%
G%P
,&P$
VCE = 8 V; Tamb = 25 C.
,&P$
VCE = 8 V; Tamb = 25 C.
(1) f1 = 433 MHz; f2 = 434 MHz
(1) f = 433 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(2) f = 900 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
(3) f = 1800 MHz
Fig 18. Output third-order intercept point as a function
of collector current; typical values
DDD
,3R
G%P
Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
DDD
3/G%
G%P
9&(9
IC = 10 mA; Tamb = 25 C.
(1) f1 = 433 MHz; f2 = 434 MHz
(1) f = 433 MHz
(2) f = 900 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
(3) f = 1800 MHz
Fig 20. Output third-order intercept point as a function
of collector-emitter voltage; typical values
Product data sheet
9&(9
IC = 10 mA; Tamb = 25 C.
(2) f1 = 900 MHz; f2 = 901 MHz
BFU530W
Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
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13 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
1)PLQ
G%
DDD
1)PLQ
G%
,&P$
VCE = 8 V; Tamb = 25 C; S = opt.
I0+]
VCE = 8 V; Tamb = 25 C; S = opt.
(1) f = 433 MHz
(1) IC = 1 mA
(2) f = 900 MHz
(2) IC = 2 mA
(3) f = 1800 MHz
(3) IC = 3 mA
(4) IC = 5 mA
(5) IC = 8 mA
(6) IC = 10 mA
(7) IC = 15 mA
(8) IC = 20 mA
(9) IC = 25 mA
Fig 22. Minimum noise figure as a function of
collector current; typical values
BFU530W
Product data sheet
Fig 23. Minimum noise figure as a function of
frequency; typical values
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
DDD
VCE = 8 V; 400 MHz f 2 GHz.
(1) IC = 1 mA
(2) IC = 2 mA
(3) IC = 3 mA
(4) IC = 5 mA
(5) IC = 8 mA
(6) IC = 10 mA
(7) IC = 15 mA
(8) IC = 20 mA
(9) IC = 25 mA
Fig 24. Optimum reflection coefficient (opt); typical values
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be implemented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
BFU530W
Product data sheet
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Rev. 1 — 13 January 2014
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11423.
9&&9
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60$
Q+
0XUDWD
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5)RXWSXW
60$
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DDD
Fig 25. Schematic 433 MHz ISM band LNA
Table 10. Application performance data at 433 MHz
ICC = 10 mA; VCC = 3.6 V
BFU530W
Product data sheet
Symbol
Parameter
s212
Conditions
insertion power gain
NF
noise figure
IP3o
output third-order
intercept point
Min Typ Max Unit
-
f1 = 433.1 MHz; f2 = 433.2 MHz;
Pi = 30 dBm per carrier
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Rev. 1 — 13 January 2014
17
-
dB
-
1.1
-
dB
-
9
-
dBm
© NXP B.V. 2014. All rights reserved.
16 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
10.2 Application example: 866 ISM band LNA
866 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11424.
9&&9
)
Q)
ȍ
Nȍ
Q+
0XUDWD
/4:VHULHV
S)
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0XUDWD
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60$
S)
5)RXWSXW
60$
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Q+
0XUDWD
/4:VHULHV
DDD
Fig 26. Schematic 866 MHz ISM band LNA
Table 11. Application performance data at 866 MHz
ICC = 10 mA; VCC = 3.6 V
BFU530W
Product data sheet
Symbol
Parameter
s212
Conditions
insertion power gain
NF
noise figure
IP3o
output third-order
intercept point
Min Typ Max Unit
-
f1 = 866.1 MHz; f2 = 866.2 MHz;
Pi = 30 dBm per carrier
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Rev. 1 — 13 January 2014
15
-
dB
-
1.1
-
dB
-
17
-
dBm
© NXP B.V. 2014. All rights reserved.
17 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
11. Package outline
3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV
627
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Fig 27. Package outline SOT323
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
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BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
12. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
13. Abbreviations
Table 12.
Abbreviations
Acronym
Description
AEC
Automotive Electronics Council
ISM
Industrial, Scientific and Medical
LNA
Low-Noise Amplifier
MSG
Maximum Stable Gain
NPN
Negative-Positive-Negative
SMA
SubMiniature version A
14. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU530W v.1
20140113
Product data sheet
-
-
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
19 of 22
BFU530W
NXP Semiconductors
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15. Legal information
15.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BFU530W
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
20 of 22
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NPN wideband silicon RF transistor
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
21 of 22
BFU530W
NXP Semiconductors
NPN wideband silicon RF transistor
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
10.1
10.2
11
12
13
14
15
15.1
15.2
15.3
15.4
16
17
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . 15
Application example: 433 ISM band LNA . . . . 16
Application example: 866 ISM band LNA . . . . 17
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18
Handling information. . . . . . . . . . . . . . . . . . . . 19
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 January 2014
Document identifier: BFU530W