DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current (max. 100 mA) handbook, halfpage 3 • Low voltage (max. 15 V). 3 1 APPLICATIONS • High-speed, saturated switching applications for industrial service in thick and thin-film circuits. 2 1 2 Top view MAM256 DESCRIPTION PNP switching transistor in a SOT23 plastic package. Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN DESCRIPTION MARKING 1 base 2 emitter 3 collector TYPE NUMBER MARKING CODE BSR12 B5p QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −15 V VCEO collector-emitter voltage open base − −15 V ICM peak collector current − −200 mA Ptot total power dissipation − 250 mW Tj junction temperature − 150 °C hFE DC current gain IC = −10 mA; VCE = −1 V 30 − IC = −50 mA; VCE = −1 V 30 120 1.5 − GHz 30 ns Tamb ≤ 25 °C fT transition frequency f = 500 MHz; IC = −50 mA; VCE = −10 V toff turn-off time ICon = −30 mA; IBon = −3 mA; IBoff = 3mA − 1999 Jul 23 2 Philips Semiconductors Product specification PNP switching transistor BSR12 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −15 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −3 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on a ceramic substrate 8 × 10 × 0.7 mm. 1999 Jul 23 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification PNP switching transistor BSR12 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = −10 V MIN. TYP. MAX. UNIT − − −50 nA IE = 0; VCB = −10 V; Tamb = 125 °C − − −5 µA ICES collector cut-off current VBE = 0; VCE = −10 V − − −50 nA V(BR)CBO breakdown voltage IE = 0; IC = −10 µA −15 − − V V(BR)CES breakdown voltage VBE = 0; IC = −10 µA −15 − − V V(BR)EBO breakdown voltage IC = 0; IE = −100 µA −3 − − V VCEOsust collector-emitter sustaining IB = 0; IC = −10 mA voltage −15 − − V VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 − − −130 mV IC = −50 mA; IB = −5 mA; note 1 − −180 −270 mV IC = −100 mA; IB = −10 mA; note 1 − − −450 mV base-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 −725 − −920 mV IC = −50 mA; IB = −5 mA; note 1 −800 − −1150 mV IC = −100 mA; IB = −10 mA; note 1 −900 − −1500 mV VBEsat hFE DC current gain IC = −1 mA; VCE = −1 V; note 1 30 − − IC = −10 mA; VCE = −1 V; note 1 30 − − IC = −50 mA; VCE = −1 V; note 1 30 − 120 IC = −50 mA; VCE = −1 V; Tamb = 55 °C; note 1 30 − − IC = −100 mA; VCE = −1 V; note 1 20 − − 1.5 − − fT transition frequency IC = −50 mA; VCE = −10 V; f = 500 MHz Cc collector capacitance IE = Ie = 0; VCB = −5 V − − 4.5 pF Ce emitter capacitance IC = Ic = 0; VEB = −0.5 V − − 6 pF GHz Switching time (see Fig.2) ton turn-on time Vi = −6.85 V; VBB = 0 V; ICon = −30 mA; IBon = −3.0 mA − − 20 ns toff turn-off time Vi = 11.7 V; VBB = −9.85 V; ICon = −30 mA; IBon = −3 mA; IBoff = 3 mA − − 30 ns Note 1. Pulse test: tp = 300 µs; δ = 0.01. 1999 Jul 23 4 Philips Semiconductors Product specification PNP switching transistor BSR12 VCC = −3 V VBB R1 handbook, halfpage R2 C Vo R3 Vi DUT 50 Ω MGS460 R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF. Pulse generator: Pulse duration tp = 400 ns. Rise time tr < 1 ns. Output impedance ZO = 50 Ω. Sampling scope: Rise time tr < 1 ns. Input impedance Zi = 100 kΩ. Fig.2 Test circuit for switching times. MGS461 70 handbook, full pagewidth hFE 60 typ 50 40 30 20 −10−1 −1 −10 VCE = − 1 V; Tamb = 25°C. Fig.3 DC current gain; typical values. 1999 Jul 23 5 −102 IC (mA) −103 Philips Semiconductors Product specification PNP switching transistor BSR12 MGS462 −500 handbook, full pagewidth VCEsat (mV) −400 −300 −200 −100 typ 0 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. MGS463 −1000 handbook, full pagewidth VBEsat (mV) −800 typ −600 −400 −200 0 −10−1 −1 −10 −102 IC (mA) IC/IB = 10. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 1999 Jul 23 6 −103 Philips Semiconductors Product specification PNP switching transistor BSR12 MGS464 −500 handbook, halfpage VCEsat (mV) −400 (1) −300 −200 (2) −100 0 0 40 80 120 160 200 Tj (°C) (1) IC = 100 mA; IB = 10 mA (2) IC = 50 mA and IB = 5 mA. Fig.6 Collector-emitter saturation voltage as a function of junction temperature; typical values. 1999 Jul 23 7 Philips Semiconductors Product specification PNP switching transistor BSR12 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Jul 23 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification PNP switching transistor BSR12 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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