UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc. FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free MJE13009DL-TA3-T MJE13009DG-TA3-T www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube 1 of 5 QW-R203-041.A MJE13009D NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER Collector- Emitter Voltage (VBE =-1.5V) Collector-Emitter Voltage (IB =0) Emitter-Base Voltage DC Collector Current Pulse(Note 2) DC Base Current Pulse(Note 2) DC Emitter Current Pulse(Note 2) Total Power Dissipation TA=25°C Linear Derating Factor Above Total Power Dissipation TC=25°C Linear Derating Factor Above Operating Junction Temperature SYMBOL VCEV VCEO VEBO IC ICM IB IBM IE IEM RATINGS 700 400 9 12 24 6 12 18 36 2 16 100 800 UNIT V V V A A A A A A W mW/°C W mW/°C -65 ~ +150 °C PD PD TJ Storage Temperature TSTG -65 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolu te maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 3.13 UNIT °C /W °C /W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) Collect Cut-Off Current ICEV Emitter Cut-Off Current ON CHARACTERISTICS (Note) IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) TEST CONDITIONS IC=10mA, IB=0 VCEV=Rated Value, VBE(OFF)= -1.5V VEB=9V, IC=0 TYP TC=100°C 8 6 TC=100°C IC=12A, IB=3A IC=5A, IB=1A Base -Emitter Saturation Voltage ON CHARACTERISTICS (Note) Current Gain Bandwidth Product Output Capacitance VBE(SAT) fT COB IC=8A, IB=1.6A www.unisonic.com.tw TC=100°C VCE=10V, IC=500mA, f=1MHZ VCB=10V, IC=0, f=0.1MHZ UNISONIC TECHNOLOGIES CO., LTD MAX UNIT 400 VCE =5V, IC=5A VCE =5V, IC=8A IC=5A, IB=1A IC=8A, IB=1.6A MIN 4 180 1 5 1 V mA mA mA 40 30 1 1.5 2 3 1.2 1.6 1.5 V V V V V V V MHZ pF 2 of 5 QW-R203-041.A MJE13009D NPN SILICON TRANSISTOR SWITCHING CHARACTERISTICS RESISTIVE LOAD tD Delay Time tR Rise Time VCC=125V, IC=8A, IB1=IB2=1.6A, tP=25μs, Duty Cycle≤1% tS Storage Time tF Fall Time INDUCTIVE LOAD, CLAMPED tS IC=8A, VCLAMP=300V,IB1=1.6A, Voltage Storage Time VBE(OFF)=5V, TC=100°C tC Crossover Time Note: Pulse Test: Pulse Width=300μs, Duty Cycle=2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.06 0.45 1.3 0.2 0.1 1 3 0.7 μs μs μs μs 0.92 0.12 2.3 0.7 μs μs 3 of 5 QW-R203-041.A MJE13009D NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 100 1000 Collector Current, IC (μA) Collector Current vs. Collector-Base Voltage 1200 Collector Current, IC (μA) Collector Current vs. Collector-Emitter Voltage 120 80 60 40 20 800 600 400 200 0 0 0 200 400 600 800 1000 Collector-Emitter Voltage, VCEV (V) 200 400 600 800 1000 Collector-Base Voltage, VCB (V) Base Current, IB (mA) Collector Current, IC (mA) 0 Collector Current vs. CollectorEmitter Voltage 25 20 15 10 Collector Current vs. CollectorEmitter Voltage 600 IB=25.75mA IB=1048μA 500 IB=848μA 400 IB=20.75mA IB=648μA 300 IB=15.75mA IB=448μA 5 200 IB=10.75mA 100 IB=248μA IB=5.75mA 0 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 1 2 3 4 5 6 7 8 9 Collector-Emitter Voltage, VCE (V) 4 of 5 QW-R203-041.A MJE13009D NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) Collector Current vs. CollectorEmitter Voltage 12 6 10 IB=429mA 4 IB=329mA 3 IB=229mA 2 IB=129mA 1 0 0 1 2 3 4 5 6 7 8 9 10 Collector-Emitter Voltage, VCE (V) Collector Current, IC (A) Collector Current, IC (A) 5 Collector Current vs. CollectorEmitter Voltage IB=856mA IB=756mA IB=656mA IB=556mA IB=456mA 8 6 IB=356mA 4 IB=256mA 2 IB=156mA 0 0 1 2 3 4 5 6 7 Collector-Emitter Voltage, VCE (V) 8 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R203-041.A