MCP1415/16 Tiny, 1.5A, High-Speed Power MOSFET Driver

MCP1415/16
Tiny 1.5A, High-Speed Power MOSFET Driver
Features:
General Description:
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 470 pF in 13 ns (typical)
- 1000 pF in 20 ns (typical)
• Short Delay Times: 41 ns (tD1), 48 ns (tD2) (typical)
• Low Supply Current:
- With Logic ‘1’ Input - 0.65 mA (typical)
- With Logic ‘0’ Input - 0.1 mA (typical)
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Logic Input Withstands Negative Swing up to 5V
• Space-Saving 5L SOT-23 Package
The MCP1415/16 devices are high-speed MOSFET
drivers that are capable of providing 1.5A of peak
current. The inverting or non-inverting single channel
output is directly controlled from either TTL or CMOS
(3V to 18V) logic. These devices also feature low
shoot-through current, matched rise and fall time and
short propagation delays which make them ideal for
high switching frequency applications.
Applications:
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
MCP1415/16 devices operate from a single 4.5V to
18V power supply and can easily charge and discharge
1000 pF gate capacitance in less than 20 ns (typical).
They provide low enough impedances in both the ‘On’
and ‘Off’ states to ensure the intended state of the
MOSFET is not affected, even by large transients.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
are not subject to damage when noise spiking (up to
5V, of either polarity) occurs on the Ground pin. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2.0 kV (HBM) and
300V (MM).
Package Types
SOT-23-5
MCP1415
MCP1416
5 OUT
NC 1
VDD 2
4 GND
IN 3
NC
1
VDD
2
IN
3
MCP1415R
NC 1
 2008-2014 Microchip Technology Inc.
4 GND
MCP1416R
5 VDD
GND 2
IN 3
5 OUT
NC 1
5 VDD
GND 2
4 OUT
IN 3
4 OUT
DS20002092F-page 1
MCP1415/16
Functional Block Diagram
Inverting
VDD
650 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 25 pF
(Each Input)
4.7V
MCP1415 Inverting
MCP1416 Non-inverting
GND
Note:
DS20002092F-page 2
Unused inputs should be grounded.
 2008-2014 Microchip Technology Inc.
MCP1415/16
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
VDD, Supply Voltage............................................. +20V
VIN, Input Voltage.............. (VDD + 0.3V) to (GND - 5V)
Package Power Dissipation (TA = 50°C)
5L SOT23...................................................... 0.39W
ESD Protection on all Pins ......................2.0 kV (HBM)
....................................................................300V (MM)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V
Parameters
Sym.
Min.
Typ.
Max.
Units
Logic ‘1’ High Input Voltage
VIH
2.4
1.9
—
V
Conditions
Input
Logic ‘0’ Low Input Voltage
VIL
—
1.6
0.8
V
Input Current
IIN
-1
—
+1
µA
Input Voltage
VIN
-5
—
VDD + 0.3
V
High Output Voltage
VOH
VDD - 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
6
7.5

IOUT = 10 mA, VDD = 18V
(Note 2)
Output Resistance, Low
ROL
—
4
5.5

IOUT = 10 mA, VDD = 18V
(Note 2)
Peak Output Current
IPK
—
1.5
—
A
VDD = 18V (Note 2)
Latch-Up Protection Withstand
Reverse Current
IREV
0.5
—
—
A
Duty cycle  2%, t  300 µs
(Note 2)
Rise Time
tR
—
20
25
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Fall Time
tF
—
20
25
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Delay Time
tD1
—
41
50
ns
Figure 4-1, Figure 4-2 (Note 2)
Delay Time
tD2
—
48
55
ns
Figure 4-1, Figure 4-2 (Note 2)
VDD
4.5
—
18
V
IS
—
0.65
1.1
mA
VIN = 3V
IS
—
0.1
0.15
mA
VIN = 0V
0V  VIN  VDD
Output
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
 2008-2014 Microchip Technology Inc.
DS20002092F-page 3
MCP1415/16
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Logic ‘1’, High Input Voltage
VIH
2.4
Logic ‘0’, Low Input Voltage
VIL
—
Input Current
IIN
-10
Input Voltage
VIN
-5
VOH
VDD - 0.025
Low Output Voltage
VOL
Output Resistance, High
ROH
Output Resistance, Low
Conditions
—
—
V
—
0.8
V
—
+10
µA
—
VDD + 0.3
V
—
—
V
DC Test
—
—
0.025
V
DC Test
—
8.5
9.5

IOUT = 10 mA, VDD = 18V
(Note 2)
ROL
—
6
7

IOUT = 10 mA, VDD = 18V
(Note 2)
Rise Time
tR
—
30
40
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Fall Time
tF
—
30
40
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Delay Time
tD1
—
45
55
ns
Figure 4-1, Figure 4-2 (Note 2)
Delay Time
tD2
—
50
60
VDD
4.5
—
18
IS
—
0.75
1.5
mA
VIN = 3.0V
IS
—
0.15
0.25
mA
VIN = 0V
Input
0V  VIN  VDD
Output
High Output Voltage
Switching Time (Note 1)
Figure 4-1, Figure 4-2 (Note 2)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
V
Switching times ensured by design.
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V
Parameter
Sym.
Min.
Typ.
Max.
Units
Comments
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
JA
—
220.7
—
°C/W
Package Thermal Resistances
Thermal Resistance, 5LD SOT23
DS20002092F-page 4
 2008-2014 Microchip Technology Inc.
MCP1415/16
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
300
400
250
300
Fall Time (ns)
Rise Time (ns)
10,000 pF
10,000 pF
350
6,800 pF
250
470 pF
200
3,300 pF
150
100
1,000 pF
50
6,800 pF
200
470 pF
150
3,300 pF
100
1,000 pF
50
0
0
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
FIGURE 2-1:
Voltage.
FIGURE 2-4:
Voltage.
Rise Time vs. Supply
150
125
100
75
18V
50
5V
25
18
Fall Time vs. Supply
12V
125
100
75
18V
50
5V
1000
0
100
10000
1000
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
Propagation Delay (ns)
25
FIGURE 2-5:
Load.
54
CLOAD = 1000 pF
VDD = 18V
tRISE
20
tFALL
10
10000
Capacitive Load (pF)
Capacitive Load (pF)
Time (ns)
16
150
25
0
100
15
14
175
12V
175
Fall Time (ns)
Rise Time (ns)
200
30
12
200
225
35
10
Supply Voltage (V)
Fall Time vs. Capacitive
VDD = 12V
52
50
tD2
48
46
tD1
44
42
40
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
5
Temperature (°C)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
 2008-2014 Microchip Technology Inc.
6
7
8
9
10
11
12
Input Amplitude (V)
FIGURE 2-6:
Input Amplitude.
Propagation Delay Time vs.
DS20002092F-page 5
MCP1415/16
115
0.8
105
0.7
95
Quiescent Current (mA)
Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
tD1
85
75
65
tD2
55
45
35
VDD = 18V
Input = 1
0.6
0.5
0.4
0.3
0.2
Input = 0
0.1
0
4
6
8
10
12
14
16
18
-40 -25 -10
5
Supply Voltage (V)
FIGURE 2-7:
Supply Voltage.
FIGURE 2-10:
Temperature.
55
50
45
tD2
40
35
Quiescent Current vs.
3.0
VDD = 18V
Input Threshold (V)
Propagation Delay (ns)
Temperature (°C)
Propagation Delay Time vs.
60
tD1
30
2.5
2.0
V HI
1.5
VLO
1.0
0.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
6
8
Temperature (°C)
FIGURE 2-8:
Temperature.
Propagation Delay Time vs.
FIGURE 2-11:
Voltage.
0.8
2.0
0.7
1.9
0.6
0.5
Input = 1
0.4
0.3
0.2
Input = 0
0.1
10
12
14
16
18
Supply Voltage (V)
Input Threshold (V)
Quiescent Current (mA)
20 35 50 65 80 95 110 125
0
Input Threshold vs. Supply
VDD = 12V
VHI
1.8
1.7
1.6
1.5
VLO
1.4
1.3
4
6
8
10
12
14
16
18
-40 -25 -10
Supply Voltage (V)
FIGURE 2-9:
Supply Voltage.
DS20002092F-page 6
Quiescent Current vs.
5
20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-12:
Temperature.
Input Threshold vs.
 2008-2014 Microchip Technology Inc.
MCP1415/16
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
140
VDD = 18V
140
Supply Current (mA)
Supply Current (mA)
160
1 MHz
120
50 kHz
100
100 kHz
80
60
200 kHz
40
500 kHz
20
0
100
VDD = 18V
470 pF
100
1,000 pF
80
3,300 pF
60
40
6,800 pF
20
0
1000
10000
10
100
Capacitive Load (pF)
Supply Current (mA)
80
FIGURE 2-16:
Frequency.
Supply Current vs.
120
VDD = 12V
70
50 kHz
50
100 kHz
40
200 kHz
30
20
500 kHz
10
0
100
1000
60
3,300 pF
40
1,000 pF
20
1000
35
FIGURE 2-17:
Frequency.
Supply Current vs.
VDD = 6V
60
1 MHz
30
50 kHz
25
20
100 kHz
15
10
5
200 kHz
500 kHz
0
100
1000
10000
Supply Current vs.
 2008-2014 Microchip Technology Inc.
Supply Current vs.
VDD = 6V
10,000 pF
50
40
30
6,800 pF
470 pF
3,300 pF
20
1,000 pF
10
0
100
1000
10000
Frequency (kHz)
Capacitive Load (pF)
FIGURE 2-15:
Capacitive Load.
10000
Frequency (kHz)
Supply Current (mA)
Supply Current (mA)
40
6,800 pF
470 pF
80
Capacitive Load (pF)
FIGURE 2-14:
Capacitive Load.
10,000 pF
100
0
100
10000
Supply Current vs.
V DD = 12V
1 MHz
60
1000
Frequency (kHz)
Supply Current (mA)
FIGURE 2-13:
Capacitive Load.
90
10,000 pF
120
FIGURE 2-18:
Frequency.
Supply Current vs.
DS20002092F-page 7
MCP1415/16
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
30
VIN = 0V (MCP1415)
VIN = 5V (MCP1416)
25
ROUT-HI (Ω)
TA = +125°C
20
15
10
T A = +25°C
5
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
25
VIN = 5V (MCP1415)
VIN = 0V (MCP1416)
ROUT-LO (Ω)
20
15
T A = +125°C
10
TA = +25°C
5
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
Crossover Energy (A*sec)
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
1E-07
1E-08
1E-09
1E-10
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-21:
Supply Voltage.
DS20002092F-page 8
Crossover Energy vs.
 2008-2014 Microchip Technology Inc.
MCP1415/16
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
Symbol
Description
MCP1415/16
MCP1415R/16R
1
1
NC
No Connection
3.1
2
5
VDD
Supply Input
3
3
IN
Control Input
4
2
GND
Ground
5
4
OUT/OUT
Output
Supply Input (VDD)
3.3
Ground (GND)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are provided to the load.
Ground is the device return pin. The ground pin should
have a low-impedance connection to the bias supply
source return. When the capacitive load is being
discharged, high peak currents will flow out of the
ground pin.
3.2
3.4
Control Input (IN)
The MOSFET driver input is a high-impedance, TTL/
CMOS compatible input. The input also has hysteresis
between the high and low input levels, allowing them to
be driven from slow rising and falling signals and to
provide noise immunity.
 2008-2014 Microchip Technology Inc.
Output (OUT, OUT)
The output is a CMOS push-pull output that is capable
of sourcing and sinking 1.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET stays in the intended
state even during large transients. This output also has
a reverse current latch-up rating of 500 mA.
DS20002092F-page 9
MCP1415/16
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
MOSFET drivers are high-speed, high-current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or Insulated-Gate Bipolar Transistors
(IGBTs). In high frequency switching power supplies,
the Pulse-Width Modulation (PWM) controller may not
have the drive capability to directly drive the power
MOSFET. A MOSFET driver such as the MCP1415/16
family can be used to provide additional source/sink
current capability.
4.2
MOSFET Driver Timing
1 µF
Input
Output
CL = 1000 pF
MCP1416
+5V
The ability of a MOSFET driver to transition from a fullyoff state to a fully-on state is characterized by the
driver’s rise time (tR), fall time (tF) and propagation
delays (tD1 and tD2). The MCP1415/16 family of drivers
can typically charge and discharge a 1000 pF load
capacitance in 20 ns along with a typical turn-on
propagation delay (tD1) of 41 ns. Figure 4-1 and
Figure 4-2 show the test circuit and timing waveform
used to verify the MCP1415/16 timing.
0.1 µF
Ceramic
90%
Input
0V
10%
18V
tD1 90%
Output
tR
tD2
10%
0V
FIGURE 4-2:
Waveform.
90%
tF
10%
Non-Inverting Driver Timing
VDD = 18V
1 µF
Input
4.3
0.1 µF
Ceramic
Careful layout and decoupling capacitors are required
when using power MOSFET drivers. Large current is
required to charge and discharge capacitive loads
quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
Output
CL = 1000 pF
To operate the MOSFET driver over a wide frequency
range with low supply impedance, it is recommended to
place a ceramic and a low ESR film capacitor in parallel
between the driver VDD and GND. A 1.0 µF low ESR
film capacitor and a 0.1 µF ceramic capacitor placed
between pins 2 and 4 are required for reliable
operation. These capacitors should be placed close to
the driver to minimize circuit board parasitics and
provide a local source for the required current.
MCP1415
+5V
90%
Input
0V
10%
18V
tD1
tF
tD2
Decoupling Capacitors
tR
90%
90%
Output
0V
10%
FIGURE 4-1:
Waveform.
DS20002092F-page 10
10%
Inverting Driver Timing
 2008-2014 Microchip Technology Inc.
MCP1415/16
4.4
Power Dissipation
4.4.3
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
P T = PL + PQ + P CC
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because, for a very
short period of time, both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation described in Equation 4-4.
EQUATION 4-4:
Where:
P
PT
=
Total power dissipation
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
PCC
=
Operating power dissipation
4.4.1
CC
= CC  f  V
DD
Where:
CC
=
Cross-Conduction constant
(A*sec)
f
=
Switching frequency
VDD
=
MOSFET driver supply voltage
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
P
Where:
L
= fC V
T
DD
2
f
=
Switching frequency
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
4.4.2
4.5
PCB Layout Considerations
Proper PCB layout is important in high-current, fast
switching circuits to provide proper device operation
and robustness of design. Improper component
placement may cause errant switching, excessive
voltage ringing or circuit latch-up. PCB trace loop area
and inductance must be minimized. This is
accomplished by placing the MOSFET driver directly at
the load and placing the bypass capacitor directly at the
MOSFET driver (see Figure 4-3). Locating ground
planes or ground return traces directly beneath the
driver output signal reduces trace inductance. A ground
plane also helps as a radiated noise shield and it provides some heat sinking for power dissipated within the
device (see Figure 4-4).
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends on the state of the input pin. The
MCP1415/16 devices have a quiescent current draw of
0.65 mA (typical) when the input is high and of 0.1 mA
(typical) when the input is low. The quiescent power
dissipation is shown in Equation 4-3.
EQUATION 4-3:
PQ =  IQH  D + IQL   1 – D    VDD
Where:
IQH
=
Quiescent current in the High
state
D
=
Duty cycle
IQL
=
Quiescent current in the Low
state
VDD
=
MOSFET driver supply voltage
 2008-2014 Microchip Technology Inc.
FIGURE 4-3:
(TOP).
Recommended PCB Layout
FIGURE 4-4:
(BOTTOM).
Recommended PCB Layout
DS20002092F-page 11
MCP1415/16
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Example
5-Lead SOT-23
Standard Markings for SOT-23
Part Number
XXNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Code
MCP1415T-E/OT
FYNN
MCP1416T-E/OT
FZNN
MCP1415RT-E/OT
F7NN
MCP1416RT-E/OT
F8NN
FYNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
DS20002092F-page 12
 2008-2014 Microchip Technology Inc.
MCP1415/16
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 2008-2014 Microchip Technology Inc.
DS20002092F-page 13
MCP1415/16
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002092F-page 14
 2008-2014 Microchip Technology Inc.
MCP1415/16
APPENDIX A:
REVISION HISTORY
Revision F (July 2014)
The following is the list of modifications:
1.
2.
Fixed a typographical error for the electrostatic
discharge (ESD) value in Absolute Maximum
Ratings †.
Minor grammatical and editorial corrections.
Revision E (May 2012)
The following is the list of modifications:
1.
Updated the Electrostatic Discharge (ESD)
value.
Revision D (December 2010)
The following is the list of modifications:
1.
2.
Updated Figure 2-19 and Figure 2-20.
Updated the package outline drawings.
Revision C (December 2008)
The following is the list of modifications:
Added the MCP1415R/16R devices throughout the
document.
Revision B (June 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Section “DC Characteristics”, Switching
Time, Rise Time: changed from 13 to 20.
Section “DC Characteristics”, Switching
Time, Fall Time: changed from 13 to 20.
Section
“DC
Characteristics”
(Over
Operating Temperature Range), Switching
Time, Rise Time: changed maximum from 35 to
40.
Section
“DC
Characteristics”
(Over
Operating Temperature Range), Switching
Time, Rise Time: changed typical from 25 to 30.
Section
“DC
Characteristics”
(Over
Operating Temperature Range), Switching
Time, Fall Time: changed maximum from 35 to
40.
Section
“DC
Characteristics”
(Over
Operating Temperature Range), Switching
Time, Fall Time: changed typical from 25 to 30.
Revision A (June 2008)
Original release of this document.
 2008-2014 Microchip Technology Inc.
DS20002092F-page 15
MCP1415/16
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/XX
Device
Temperature
Range
Package
Examples:
a)
b)
Device:
MCP1415T: 1.5A MOSFET Driver, Inverting
(Tape and Reel)
MCP1415RT:1.5A MOSFET Driver, Inverting
(Tape and Reel)
MCP1416T: 1.5A MOSFET Driver, Non-Inverting
(Tape and Reel)
MCP1416RT:1.5A MOSFET Driver, Non-Inverting
(Tape and Reel)
a)
b)
MCP1415T-E/OT:
1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1415RT-E/OT: 1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1416T-E/OT:
1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1416RT-E/OT: 1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
Temperature Range: E = -40C to +125C
Package: *
OT = Plastic Thin Small Outline Transistor (OT), 5-Lead
* All package offerings are Pb Free (Lead Free)
DS20002092F-page 16
 2008-2014 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2008-2014, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-63276-424-9
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2008-2014 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20002092F-page 17
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
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EUROPE
Corporate Office
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Tel: 480-792-7200
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Technical Support:
http://www.microchip.com/
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Web Address:
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DS20002092F-page 18
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03/25/14
 2008-2014 Microchip Technology Inc.