LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY (0.39 Inch) Pb Lead-Free Parts LFD3F5/62-XX-PF DATA SHEET DOC. NO : QW0905- LFD3F5/62-XX-PF REV. : A DATE : 11 - Apr. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD3F5/62-XX-PF Page 1/9 Package Dimensions 40.0(1.57") DIG.1 9.9 (0.39") DIG.2 L1 DIG.3 7.0(0.28") DIG.4 11.3 (0.44") 14.0 (0.55") L2 ψ1.2(0.047") LFD3F5/62-XX-PF LIGETEK A F G E B C D DP 3.5±0.5 ψ0.45 PIN NO.1 2.0*16=32.0(1.26") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. PIN 9:NO PIN DIG. 2 27 7 6 30 5 3 2 34 1 7 6 30 5 29 28 8 1 33 32 4 34 A2 B2 C2 D2 E2 F2 G2 31 2 26 L1 26 L1 L2 L2 22 22 24 23 13 12 11 25 10 A3 B3 C3 D3 E3 F3 G DIG. 3 24 23 13 12 11 25 10 A3 B3 C3 D3 E3 F3 G DIG. 3 18 18 14 20 19 17 16 15 21 14 A4 B4 C4 D4 E4 F4 G4 DIG. 4 20 19 17 16 15 21 A4 B4 C4 D4 E4 F4 G4 DIG. 4 LFD3F52-XX-PF A1 B1 C1 D1 E1 F1 G1 DIG. 1 3 A2 B2 C2 D2 E2 F2 G2 27 29 28 8 DIG. 2 A1 B1 C1 D1 E1 F1 G1 31 33 32 4 DIG. 1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD3F5/62-XX-PF Page 2/9 Internal Circuit Diagram LFD3F62-XX-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/9 PART NO. LFD3F5/62-XX-PF Electrical Connection PIN NO. LFD3F52-XX-PF PIN NO. LFD3F52-XX-PF 1. Anode G1 18. Common Cathode Dig.4 2. Anode E1 19. Anode B4 3. Anode D1 20. Anode A4 4. Anode C1 21. Anode F4 5. Anode G2 22. Common Cathode Dig.3 6. Anode E2 23. Anode B3 7. Anode D2 24. Anode A3 8. Anode C2 25. Anode F3 9. NO PIN 26. Anode L1,L2 10. Anode G3 27. Common Cathode Dig.2,L1,L2 11. Anode E3 28. Anode B2 12. Anode D3 29. Anode A2 13. Anode C3 30. Anode F2 14. Anode G4 31. Common Cathode Dig.1 15. Anode E4 32. Anode B1 16. Anode D4 33. Anode A1 17. Anode C4 34. Anode F1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/9 PART NO. LFD3F5/62-XX-PF Electrical Connection PIN NO. LFD3F62-XX-PF PIN NO. LFD3F62-XX-PF 1. Cathode G1 18. Common Anode Dig.4 2. Cathode E1 19. Cathode B4 3. Cathode D1 20. Cathode A4 4. Cathode C1 21. Cathode F4 5. Cathode G2 22. Common Anode Dig.3 6. Cathode E2 23. Cathode B3 7. Cathode D2 24. Cathode A3 8. Cathode C2 25. Cathode F3 9. NO PIN 26. Cathode L1,L2 10. Cathode G3 27. Common Anode Dig.2,L1,L2 11. Cathode E3 28. Cathode B2 12. Cathode D3 29. Cathode A2 13. Cathode C3 30. Cathode F2 14. Cathode G4 31. Common Anode Dig.1 15. Cathode E4 32. Cathode B1 16. Cathode D4 33. Cathode A1 17. Cathode C4 34. Cathode F1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/9 PART NO. LFD3F5/62-XX-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Emitted CHIP PART NO Material △λ Vf(v) (nm) Iv(mcd) IV-M Min. Max. Min. Typ. Common Cathode LFD3F52-XX-PF GaP LFD3F62-XX-PF Electrical λP (nm) 565 Green 30 1.7 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.35 2.35 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD3F5/62-XX-PF Page 6/9 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/9 PART NO. LFD3F5/62-XX-PF Typical Electro-Optical Characteristics Curve G CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD3F5/62-XX-PF Page 8/9 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/9 PART NO. LFD3F5/62-XX-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11