Analog Power AM110P08-11B P-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -80 PRODUCT SUMMARY rDS(on) (mΩ) 11.2 @ VGS = -10V 14.5 @ VGS = -5.5V ID(A) -110a Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -80 VGS Gate-Source Voltage ±20 TC=25°C ID -110 Continuous Drain Current a IDM Pulsed Drain Current b -390 a IS -110 Continuous Source Current (Diode Conduction) a T =25°C P 300 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 1 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM110P08-11B_1A Analog Power AM110P08-11B Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -64 V, VGS = 0 V VDS = -64 V, VGS = 0 V, TJ = 55°C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -45 A VGS = -5.5 V, ID = -44 A VDS = -15 V, ID = -20 A IS = -55 A, VGS = 0 V Dynamic VDS = -40 V, VGS = -5.5 V, ID = -20 A VDS = -40 V, RL = 2 Ω, ID = -20 A, VGEN = -10 V, RGEN = 6 Ω VDS = -15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 -1 -25 -120 Unit V nA uA A 11.2 14.5 30 -0.92 168 47 78 25 73 351 144 16071 966 858 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM110P08-11B_1A Analog Power AM110P08-11B Typical Electrical Characteristics 0.06 50 0.05 40 3.5V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.04 0.03 4V 0.02 20 10 4.5V,5V,5.5V,6V,8V,10V 0.01 30 0 0 0 5 10 15 20 25 0 30 ID-Drain Current (A) 4 6 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.1 100 TJ = 25°C ID = -20A TJ = 25°C 0.08 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 30 25000 F = 1MHz 10V,8V,6V,5.5V,5V,4.5V 20000 Capacitance (pf) ID - Drain Current (A) 25 4V 20 15 3.5V 10 Ciss 15000 10000 5000 5 0 Coss Crss 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM110P08-11B_1A Analog Power AM110P08-11B Typical Electrical Characteristics 2.5 VDS = -40V ID = -20A 9 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 50 100 150 200 250 300 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 450 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 400 350 300 250 200 150 100 50 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 62.5 °C /W 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM110P08-11B_1A Analog Power AM110P08-11B Package Information © Preliminary 5 Publication Order Number: DS_AM110P08-11B_1A