KSMU9014N KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON -60V 0.5Ω ID -5.1A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -5.1 Continuous Drain Current-T=100℃ -3.2 Pulsed Drain Current2 -20 EAS Single Pulse Avalanche Energy3 140 PD Power Dissipation4 25 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 5.0 RƟJA Thermal Resistance, Junction to Ambient1 110 www.kersemi.com ℃/W 1 KSMU9014N KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMU9014N KSMU9014N TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -80 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -100 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 0.5 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 1.4 — — — 270 — — 170 — — 31 — — 11 — — 63 — — 9.6 — — 31 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — — 12 Gate-SourceCharge VGS=4.5V, VDS=20V, — — 3.8 Gate-Drain “Miller” Charge ID=6A — — 5.1 ns ns ns ns nC nC nC — — -5.5 V — 80 160 ns — 0.0 96 0.19 nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMU9014N KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com 3 KSMU9014N KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4