BUK7C08-55AITE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature monitoring due to integrated temperature sensor Low conduction losses due to low on-state resistance Electrostatically robust due to integrated protection diodes Reduced component count due to integrated current sensor Q101 compliant 1.3 Applications Automotive and general purpose power switching Electrical Power Assisted Steering (EPAS) Fan control Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Conditions Min Typ Max Unit VDS Symbol Parameter drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3 - - 130 A mΩ [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 6.8 8 ID/Isense ratio of drain current to sense current Tj > -55 °C; Tj < 175 °C; VGS > 5 V 450 500 550 SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; Tj > -55 °C; Tj < 175 °C -1.4 -1.54 -1.68 mV/K VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C 648 658 668 mV [1] Current is limited by power dissipation chip rating. BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 ISENSE sense current 3 A anode 4 D drain 5 K cathode 6 KS Kelvin source 7 S source mb D Simplified outline Graphic symbol d mb a g 4 123 567 mounting base; connected to drain SOT427 (D2PAK) MBL362 Isense s k Kelvin source 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7C08-55AITE D2PAK plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) BUK7C08-55AITE_2 Product data sheet Version SOT427 © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 2 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current - 55 V -20 20 V Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1] - 130 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; see Figure 2 [2] - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 522 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 272 W IGS(CL) gate-source clamping current continuous - 10 mA pulsed; tp = 5 ms; δ = 0.01 - 50 mA Visol(FET-TSD) FET to temperature sense diode isolation voltage -100 100 V Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 130 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C [1] [2] - 75 A - 522 A - 460 mJ - 6 kV Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy Electrostatic discharge Vesd electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 3 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 03na19 120 ID (A) Pder (%) 80 100 40 50 Capped at 75A due to package 0 0 0 50 100 150 200 0 Tmb (°C) Fig 2. Fig 1. 03no05 150 Normalized total power dissipation as a function of mounting base temperature 50 100 150 Tj (°C) 200 Normalized continuous drain current as a function of mounting base temperature 103 03nh48 ID (A) RDSon = VDS / ID tp = 10 µs 102 100 µs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 1 Fig 3. 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 4 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient mounted on printed-circuit board; minimum footprint - - 50 K/W Rth(j-mb) thermal resistance from see Figure 4 junction to mounting base - - 0.55 K/W 03ni29 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 10−2 δ= P tp T single shot t tp 10−3 10−6 T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 5 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS V(BR)GSS IGSS RDSon R(D-ISENSE)on drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9 - - 4.4 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.1 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 250 µA 20 22 - V IG = -1 mA; VDS = 0 V; Tj > -55 °C; Tj < 175 °C 20 22 - V VDS = 0 V; VGS = 10 V; Tj = 25 °C - 22 1000 nA VDS = 0 V; VGS = -10 V; Tj = 25 °C - 22 1000 nA drain leakage current gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C; voltage Tj < 175 °C gate leakage current drain-source on-state resistance VDS = 0 V; VGS = 10 V; Tj = 175 °C - - 10 µA VDS = 0 V; VGS = -10 V; Tj = 175 °C - - 10 µA VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 6.8 8 mΩ VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7; see Figure 8 - - 16 mΩ 1.32 1.55 1.82 Ω VGS = 10 V; ID = 25 mA; Tj = 175 °C; see Figure 18 3.04 3.57 4.19 Ω drain-ISENSE on-state VGS = 10 V; ID = 25 mA; Tj = 25 °C; resistance see Figure 18 VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C 648 658 668 mV SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; Tj > -55 °C; Tj < 175 °C -1.4 -1.54 -1.68 mV/K VF(TSD)hys temperature sense diode forward voltage hysteresis IF > 125 µA; IF < 250 µA; Tj = 25 °C 25 32 50 mV ID/Isense ratio of drain current to sense current VGS > 5 V; Tj > -55 °C; Tj < 175 °C 450 500 550 ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 116 - nC - 19 - nC - 51 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 6 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 4200 - pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 12 - 920 - pF Crss reverse transfer capacitance - 500 - pF td(on) turn-on delay time - 35 - ns tr rise time - 115 - ns td(off) turn-off delay time - 155 - ns tf fall time - 110 - ns LD internal drain inductance measured from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH LS internal source inductance measured from source lead to source bond pad; Tj = 25 °C; lead length 6 mm - 7.5 - nH VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see Figure 19 - 0.85 1.2 V trr reverse recovery time - 80 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C - 200 - nC BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 7 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 03nn97 400 10 ID (A) 300 9 Label is VGS (V) 8 RDSon (mΩ) 12 7.5 20 03nn99 14 7 10 6.5 200 6 8 5.5 100 6 5 4.5 4 0 4 0 Fig 5. 2 4 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values 4 Fig 6. RDSon 6.5 (mΩ) 5.5 6 12 16 V 20 GS (V) Drain-source on-state resistance as a function of gate-source voltage; typical values 03ne89 2 03nn98 20 8 Label is VGS (V) a 7 7.5 8 16 1.5 12 1 10 8 0.5 20 4 0 Fig 7. 100 200 0 -60 300 I (A) 400 D Drain-source on-state resistance as a function of drain current; typical values Fig 8. 60 120 Tj (°C) 180 Normalized drain-source on-state resistance factor as a function of junction temperature BUK7C08-55AITE_2 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 8 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 max 10−4 min 10−5 1 0 −60 10−6 0 60 120 180 0 2 4 Tj (°C) Gate-source threshold voltage as a function of junction temperature 03no00 80 6 VGS (V) Tj = 25 Fig 9. typ 10−3 typ 2 min 10−2 max g fs (S) C; VDS = VG Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni69 8000 C (pF) 60 6000 40 4000 20 2000 C iss Coss Crss 0 0 0 25 50 75 I (A) 100 D Fig 11. Forward transconductance as a function of drain current; typical values 10-2 1 10 VDS (V) 102 Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7C08-55AITE_2 Product data sheet 10-1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 9 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 03no01 100 03nf25 10 VGS ID (A) (V) 8 75 VDS = 14 V 6 VDS = 44 V 50 4 175 °C 25 2 Tj = 25 °C 0 0 0 2 4 6 VGS (V) Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03ne84 700 0 8 40 QG (nC) 120 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 03ne85 −1.70 max SF (mV/K) VF (mV) 80 −1.60 600 typ −1.50 500 min 400 0 50 100 150 200 −1.40 645 Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values 665 675 Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values BUK7C08-55AITE_2 Product data sheet 655 VF (mV) Tj (°C) © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 10 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 03no04 600 03no03 8 RD(Is)on ID/Isense (mΩ) 550 6 500 4 450 2 400 0 4 8 12 16 V 20 GS (V) 4 8 12 16 VGS (V) 20 Isense = 25 mA Fig 17. Drain-sense current ratio as a function of gate voltage; typical values Fig 18. Drain-ISENSE on-state resistance as function of gate-source voltage; typical values 03no02 100 ID (A) 75 50 175 °C 25 Tj = 25 °C 0 0 0.5 1 VSD (V) 1.5 Fig 19. Reverse diode current as a function of reverse diode voltage; typical values BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 11 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) SOT427 A A1 E D1 mounting base D HD 4 1 Lp 7 b e e e e e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.27 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-09 06-03-16 SOT427 Fig 20. Package outline SOT427 (D2PAK) BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 12 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7C08-55AITE_2 20090217 Product data sheet - BUK7C08_55AITE-01 Modifications: BUK7C08_55AITE-01 (9397 750 11696) • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 20030819 Product data sheet - BUK7C08-55AITE_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 13 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK7C08-55AITE_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 17 February 2009 14 of 15 BUK7C08-55AITE NXP Semiconductors N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: Rev. 02 — 17 February 2009 Document identifier: BUK7C08-55AITE_2