Si6928DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 23.6588 N/A N/A RT2 13.9846 N/A N/A RT3 77.7788 N/A N/A RT4 64.5778 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 9.9203 m N/A N/A CT2 4.1305 m N/A N/A CT3 14.5481 m N/A N/A CT4 1.0857 N/A N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74834 Revision: 10-Jul-07 www.vishay.com 1 Si6928DQ_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 13.2333 N/A N/A RF2 52.9092 N/A N/A RF3 49.5243 N/A N/A RF4 64.3332 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 1.4805 m N/A N/A CF2 3.7284 m N/A N/A CF3 11.7531 m N/A N/A CF4 1.0218 N/A N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74834 Revision: 10-Jul-07 Si6928DQ_RC Vishay Siliconix Document Number: 74834 Revision: 10-Jul-07 www.vishay.com 3