Temperature Compensated Crystal Oscillators SXO-2200HGED SERIES TCXO or VC-TCXO TRI-STATE XTAL Initial frequnecy tolerance at +25゜ C ±2゜ C CLK OSC Actual size 0.014 gm (wt.) SXO-2200HGED #1 #2 #3 0.35 #1 0.15x0.15 #2 2.0±0.2 #4 TCXO or VC-TCXO Temperature range Input voltage change Frequency Stability Output load change Aging Operating temperature Supply voltage (VDD) Operating Conditions Control voltage (Vcon) 0.6 1 2 3 4 5 6 0.7 0.3 #6 #5 1.8 #4 0.5 CONNECTION PIN 0.7 VCXO 0.8±0.1 E/D control voltage (Pin#2) Supply voltage 0.35 #3 TCXO VC-TCXO SXO-2200HGED SXO-2200HGEDV GND Vcontrol “ L” OPEN or “H” “Z” OUTPUT GND TCXO OPEN or “H” “Z” OUTPUT NC or GND VDD SOLDERING PATTERN 0.95 0.4 1.4 0.55 0.7 2.3 OUTPUT WAVEFORM OCXO “ L” Z : high impedance 0.5 Absolute Max. Ratings Vcontrol voltage (Vcon) E/D control voltage (Pin#2) Storage temperature Reflow condition SXO-2200HGED Standard frequencies (MHz) Optional Operating Temperature*4 Low limit / Symbol High limit / Symbol ● ENABLE / DISABLE OUTPUT CONTROL ● GPS APPLICATION ● CLIPPED SINE WAVEFORM ● PACKAGE SIZE 2.5x2.0 mm C to +85゜ C (Standard) -30゜ C to +85゜ C (W = Option, frequency dependent) -40゜ D = +1.8V, F = +2.5V, H = +2.8V, J = +3.0V, K = +3.3V DC ±5% +0.9V ±0.8V (VDD = +1.8V) n.a. 1/2 VDD ±1V (VDD = +2.5V to +3.3V) VIH : 80% VDD min. (Enable) VIL : 20% VDD max. (Disable) -0.6V to +4.6V DC n.a. -0.6V to VDD +0.6V DC -0.6V to VDD +0.6V (+4.6V max.) C to +85゜ C -40゜ 1.5 mA max. (13.000 MHz to 30.000 MHz) 1.7 mA max. (30.000 MHz to 40.000 MHz) 2 mA max. (40.000 MHz to 52.000 MHz) 2 μA max. (Pin#2 = ViL) 0.8 Vp-p min. 10 kΩ. // 10 pF Clipped sine wave (DC-coupling) Output Frequency slope vs. temperature CLIPPED SINE Specifications SXO-2200HGED*1 SXO-2200HGEDV*1 13.000 MHz to 52.000 MHz ±1.5 ppm max.*2 ±1.5 ppm max. (Vcon = 1/2 VDD)*2 TCXO VC-TCXO ±0.5 ppm max. over -30゜ C to +85゜ C (referred to +25゜ C)*3 ±0.2 ppm max. at VDD ±5% DC ±0.2 ppm max. at 10 kΩ ±10% with 10 pF ±10% ±1 ppm max. per year at +25゜ C ±3゜ C Disable current Level Load (-40゜ C to +85゜ C) Waveform Frequency Voltage control Adjustment (Vcon) Frequency slope Harmonic distortion Start-up time SSB phase noise (26.000 MHz) +1.8 to +3.3 V STANDARD SMD TCXO Input current Short-term frequency stability IR reflow resistance TEST CIRCUIT 2.5x2.0 mm (+1.8V to +3.3V FIXED MODELS) 2.5x2.0 mm Item General part number Frequency range #6 13 to 52 MHz STANDARD SPECIFICATIONS SXO-2200HGED 2.5±0.2 #5 ± 0.5 ppm GPS ±8 ppm to ±13 ppm (VDD = +1.8V) ±9 ppm to ±15 ppm (VDD = +2.5V to +3.3V) n.a. n.a. Positive -5 dBc max. 10 ms max. -135 dBc / Hz, Typical at 1 kHz offset ±0.1 ppm / ゜ C max. (-20゜ C to +75゜ C) ±0.3 ppm / ゜ C max. (-30゜ C to +85゜ C) ±1 ppb max. (Allan variance Tau = 0.1 sec.) ±1 ppm max. (referred to frequency before reflow) +250゜ C ±10゜ C for 10 seconds +170゜ C ±10゜ C for 1 to 2 minutes (preheating) 16.368, 16.369, 19.200, 26.000, 27.456, 33.600, 38.400, 52.000 C/g -10゜ +55゜ C / ff C/h -15゜ +60゜ C / gg C/i -20゜ +65゜ C / hh C/j -25゜ +70゜ C / ii C/k -30゜ +75゜ C / jj C/l -35゜ +80゜ C / kk C/m -40゜ +85゜ C / ll PACKAGE DATA Terminal plating RoHS 120 Compliant (Pb-free) ∅ 1.5 + 0 -0 .1 1.75±0.1 4.0±0.1 2.0±0.1 D L C Lid Base Sealing Terminal SXO-2200HGED Metal Ceramic Seam Tungsten (metalized) Gold / Nickel (surface) / (under) TAPE SPECIFICATIONS A SXO-2200HGEDV Item Package M B J MCF ( * 1 ) Fi nal par t n umber to be as s i gned w i th pac k age ty pe, T C XO or VC - T C XO, i nput v ol tage, oper ati ng tem pe rat ure and f requency. e. g. S X O- 2200H GED -J -52MH z ( * 2 ) R ef er r ed t o nom i nal fr equenc y befor e r efl ow s ol der i ng. ( * 3 ) A t V c on = 1 /2 V DD D C for SXO -2200H GED V. ( * 4 ) S el ec t " low l i mi t" and "hi gh l i mi t" for new oper ati ng tem per atur e c om bi nati on fr om the l i s ts . F A B C D F J L M Reel Dia. Qty/Reel 2.85 2.35 8.0 3.5 4.0 1.0 0.25 0.9 180 2000pcs