±0.1 or ±0.28 ppm Supply voltage (VDD) Control voltage (Vcon) Supply voltage Input current 0.07 gm (wt.) SXO-9000D (10-pads) #8 7.0±0.2 #7 #6 #5 5.0±0.2 5.0±0.2 #9 Marking #10 #4 #1 #2 #2 1.7 max. 1.4 #2 0.6 1.0 #1 #2 #3 #4 0.8 #10 2.54 Bottom View 3.2 Bottom View #5 0.9 #9 #4 1.27 #8 #3 5.08 #7 #6 0.8 3.68 0.9 1.4 #1 5.08 SXO-9000E (10-pads) PIN 1 2 3 4 5.0±0.2 #8 #10 #7 #6 3.2±0.2 #9 #5 Marking #2 #3 #4 1.7max #1 #10 #9 #2 #3 #4 #5 Bottom View #8 1.2 4.15 #7 2.2 #1 #6 PIN 1 2 3 4 5 6 7 8 9 10 PIN 1 2 3 4 5 6 7 8 9 10 PIN CONNECTION SXO-9000C CONNECTION VC-TCXO TCXO Vcon NC or GND GND GND OUTPUT OUTPUT +V DC +V DC SXO-9000D CONNECTION VC-TCXO TCXO NC or GND NC or GND NC or GND NC or GND NC or GND NC or GND GND GND OUTPUT OUTPUT NC or GND NC or GND NC or GND NC or GND E/D E/D +V DC +V DC Vcon NC or GND SXO-9000E CONNECTION VC-TCXO TCXO Vcon NC or GND NC or GND NC or GND E/D E/D GND GND NC or GND NC or GND OUTPUT OUTPUT Option : Vc Filter (0.033 μF) NC or GND +V DC NC or GND n.a. Standard frequencies (MHz) Low limit / Symbol Optional Operating Temperature*4 High limit / Symbol ±5 ppm to ±20 ppm C/g -10゜ +55゜ C / ff C/h -15゜ +60゜ C / gg C/i -20゜ +65゜ C / hh C/j -25゜ +70゜ C / ii C/k -30゜ +75゜ C / jj C/l -35゜ +80゜ C / kk C/m -40゜ +85゜ C / ll ( * 1 ) Fi nal par t num ber to be as s i gned w i th pac k age ty pe, T C XO or VC - T C XO, fr equenc y s tabi l i ty, i nput v ol tage and f requency. e. g. S X O- 9000C M V -QQ2 -3.3V -26M H z ( * 2 ) V con = 1/ 2V DD D C f or SXO-9000C /D /E- C SV & C MV. ( * 3 ) D C - c ut f or S X O - 90 00C & SXO- 9000D . D C c oupl i ng for SXO- 9000E. ( * 4 ) S el ec t " low li m it " a nd "hi gh l i m i t" for new oper ati ng temper atur e c ombi nati on fr om the l i s ts . PACKAGE DATA Package Item Lid Base Sealing Terminal Terminal plating RoHS TAPE SPECIFICATIONS 4.0±0.1 SXO-9000 L Metal Ceramic Seam Tungsten (metalized) Gold / Nickel (surface) / (under) Compliant (Pb-free) OUTPUT WAVEFORM Clipped Sine Output XTAL ±5 ppm to ±15 ppm n.a. ±5 ppb / day, ±20 ppb / 168 hours (7 days) n.a. Positive n.a. Positive -5 dBc max. 3.5 ms max. -140 dBc / Hz, Typical at 1 kHz offset n.a. 100 kΩ min. n.a. 100 kΩ min. ±1 ppb max. (Allan variance Tau = 0.1 sec.) ±1 ppm max. (referred to frequency before reflow) +250゜ C ±10゜ C for 10 seconds +170゜ C ±10゜ C for 1 to 2 minutes (preheating) 10.000, 12.800, 19.200, 19.440, 20.000, 20.480, 24.576, 26.000, 30.720 Reflow condition #3 1.7 max. #1 Symmetry Rise and fall times Output Level (-40゜ C to +85゜ ) Load Waveform Frequency adjustment voltage control (1/2 VDD ±1/2 VDD ) Holdover Frequency slope Harmonic distortion Start-up time SSB phase noise (20.000 MHz) Vcon input impedance Short-term frequency stability IR reflow resistance CMOS Output ∅ 1.5 + 0 -0 .1 1.75±0.1 Actual size Marking Vcontrol voltage (Vcon) Storage temperature 2.0±0.1 D SXO-9000E Absolute Max. Ratings C 0.125 gm (wt.) C to +70゜ C (S1 = Standard 1) -10゜ C to +85゜ C (S2 = Standard 2) -40゜ +2.7V to +5.5V DC ±5% n.a. +1.65V ± 1.65V n.a. +1.65V ± 1.65V -0.6V to +6.0V DC -0.6V to VDD +0.6V -0.6V to VDD +0.6V n.a. n.a. DC DC C to +85゜ C -40゜ 3 mA max. 5 mA max. n.a. 45% to 55% at 1/2 VDD level n.a. 5 ns max. (10% to 90% VDD level) 0.8 Vp-p min. VOL = 10% VDD max. VOH = 90% VDD min. 10 kΩ // 10 pF 15 pF max. Clipped sine wave*3 CMOS Operating temperature CLK OSC Input voltage change Output load change Aging (Stratum 3) Actual size #3 Clipped Sine OUTPUT CMOS OUTPUT TCXO VC-TCXO TCXO VC-TCXO KK2 : ±0.1 ppm max. over -10゜ C to +70゜ C (referred to +25゜ C)*2 QQ2 : ±0.28 ppm max. over -40゜ C to +85゜ C (referred to +25゜ C)*2 ±0.2 ppm max. at VDD ±5% DC ±0.1 ppm max. at load ±10% ±4.6 ppm max. at +40゜ C for 20 years including overall freq. stability VCXO Frequency Stability Operating Conditions 7.0±0.2 10.000 MHz to 40.000 MHz ±1.5 ppm max. (after 2 times of reflow soldering) Temperature range SXO-9000D SXO-9000C-CMV*1 SXO-9000D-CMV SXO-9000E-CMV TCXO Frequency range Initial frequnecy tolerance at +25゜ C ±2゜ C Output waveform TCXO or VC-TCXO M B J 0.125 gm (wt.) Specifications SXO-9000C-CSV*1 SXO-9000C-CM*1 SXO-9000D-CSV SXO-9000D-CM SXO-9000E-CSV SXO-9000E-CM A Actual size ● FEMTOCELL APPLICATION ● CMOS or CLIPPED SINE WAVEFORM ● PACKAGE SIZE 5.0x3.2 mm or 7.0x5.0 mm SXO-9000C-CS*1 SXO-9000D-CS SXO-9000E-CS General part number CMOS or CLIPPED SINE +2.7 to +5.5 V STANDARD SMD TCXO STANDARD SPECIFICATIONS Item #4 5.0x3.2 & 7.0x5.0 mm mm (+2.7V to +5.0V FIXED MODELS) 5.0x3.2 7.0x5.0 mm SXO-9000C SXO-9000C (4-pads) 10 to 40 MHz MCF SXO-9000 SERIES TCXO or VC-TCXO OCXO Temperature Compensated Crystal Oscillators Quartz Crystal Units F SXO-9000C & SXO-9000D A B C D F J L M Reel Dia. Qty/Reel 8.2 5.8 16.0 7.5 8.0 1.6 0.3 2.16 254 1000pcs (100pcs) A B C D F J L M Reel Dia. Qty/Reel 5.9 3.7 12.0 5.5 8.0 1.6 0.3 2.00 254 1000pcs (100pcs) SXO-9000E Option : Vc Filter (0.033 μF) NC or GND +V DC NC or GND 133