PBLS6002D 60 V PNP BISS loadswitch Rev. 02 — 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications n n n n Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current (DC) RCEsat collector-emitter saturation resistance - - −60 V [1] - - −1 A [2] - 255 340 mΩ - - 50 V open base IC = −1 A; IB = −100 mA TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base IO output current (DC) - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 emitter TR1 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 R1 4 R2 TR2 TR1 1 2 3 sym036 3. Ordering information Table 3. Ordering information Type number PBLS6002D Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBLS6002D F2 PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 2 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5 V [1] - −700 mA [2] - −850 mA [3] - −1 A single pulse; tp ≤ 1 ms - −2 A - −300 mA - −1 A [1] - 250 mW [2] - 350 mW [3] - 400 mW - 50 V collector current (DC) IC ICM peak collector current IB base current (DC) IBM peak base current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C TR2; NPN resistor-equipped transistor VCBO collector-base voltage VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +30 V negative - −10 V - 100 mA IO output current (DC) ICM peak collector current total power dissipation Ptot open emitter Tamb ≤ 25 °C - 100 mA [1] - 200 mW [2] - 200 mW [3] - 200 mW [1] - 400 mW [2] - 530 mW [3] - 600 mW Per device total power dissipation Ptot Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 3 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa461 0.8 Ptot (W) (1) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 312 K/W [2] - - 236 K/W [3] - - 208 K/W - - 105 K/W Per device Rth(j-a) TR1; PNP low VCEsat transistor Rth(j-sp) thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 4 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa462 103 δ=1 0.75 0.5 0.33 102 0.2 0.1 Zth(j-a) (K/W) 0.05 0.02 0.01 10 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa463 103 Zth(j-a) (K/W) δ=1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 5 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa464 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB = −60 V; IE = 0 A - - −100 nA VCB = −60 V; IE = 0 A; Tj = 150 °C - - −50 µA VCE = −60 V; VBE = 0 V - - −100 nA - - −100 nA TR1; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCEsat collector-emitter saturation voltage VCE = −5 V; IC = −1 mA 200 350 - VCE = −5 V; IC = −500 mA [1] 150 230 - VCE = −5 V; IC = −1000 mA [1] 100 160 - - −110 −175 mV IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA [1] - −135 −180 mV IC = −1000 mA; IB = −100 mA [1] - −255 −340 mV 340 mΩ RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] - 255 VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - −0.95 −1.1 PBLS6002D_2 Product data sheet V © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 6 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A td delay time tr rise time ton turn-on time IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA ts storage time tf fall time - 55 - ns toff turn-off time - 260 - ns fT transition frequency IC = −50 mA; VCE =−10 V; f = 100 MHz 150 185 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 9 15 pF [1] Min Typ Max Unit - −0.82 −0.9 V - 11 - ns - 30 - ns - 41 - ns - 205 - ns TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 900 hFE DC current gain VCE = 5 V; IC = 20 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2.5 1.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance - - 2.5 [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PBLS6002D_2 Product data sheet pF © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 7 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa474 600 006aaa475 −1 (1) hFE VCEsat (V) 400 (2) −10−1 (3) 200 0 −10−1 −1 (1) (2) (3) −10 −102 −103 −104 IC (mA) −10−2 −10−1 VCE = −5 V −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. −10 TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa476 −1.0 Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa477 −1.1 VBEsat (V) VBE (V) −0.9 −0.8 (1) (1) −0.7 (2) (2) −0.6 −0.5 (3) (3) −0.4 −0.3 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.1 −10−1 VCE = −5 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. −103 −104 IC (mA) TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS6002D_2 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 8 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa478 −2.0 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 IC (A) −1.6 006aaa479 103 RCEsat (Ω) −17.5 −14.0 102 −10.5 −1.2 −7.0 10 −0.8 (1) (2) (3) −3.5 1 −0.4 0.0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 Tamb = 25 °C −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa480 −1 Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa481 103 RCEsat (Ω) VCEsat (V) 102 −10−1 10 (1) (2) (3) (1) (2) 1 (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C 10−1 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (1) IC/IB = 100 (2) IC/IB = 50 (2) IC/IB = 50 (3) IC/IB = 10 (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS6002D_2 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 9 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa030 103 hFE (1) (2) (3) 006aaa031 1 VCEsat (V) 102 (1) (2) (3) 10−1 10 1 10−1 1 102 10 10−2 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa032 10 102 10 IC (mA) Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa033 10 VI(off) (V) VI(on) (V) (1) (1) 1 (2) (2) 1 (3) 10−1 10−1 (3) 1 102 10 10−1 10−2 10−1 IC (mA) 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS6002D_2 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 10 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 17. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 18. Test circuit for switching times PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 11 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS6002D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PBLS6002D_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 12 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 21. Wave soldering footprint PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 13 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBLS6002D_2 20090907 Product data sheet - PBLS6002D_1 Modifications: PBLS6002D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values”: VCEsat unit amended from mV to V • • Figure 20 “Reflow soldering footprint”: updated Figure 21 “Wave soldering footprint”: updated 20050623 Product data sheet PBLS6002D_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 14 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBLS6002D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 7 September 2009 15 of 16 PBLS6002D NXP Semiconductors 60 V PNP BISS loadswitch 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 September 2009 Document identifier: PBLS6002D_2