SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High efficiency due to less heat generation High collector current capability IC and ICM Smaller Printed-Circuit Board (PCB) area than for conventional transistors High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage power switches (e.g. motors, fans) High-voltage motor control Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -100 V IC collector current - - -4.1 A ICM peak collector current single pulse; tp ≤ 1 ms - - -8.2 A RCEsat collector-emitter saturation resistance IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 56 80 mΩ PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 3 SOT223 (SC-73) sym028 3. Ordering information Table 3. Ordering information Type number Package PBSS306PZ Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PBSS306PZ S306PZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -100 V VCEO collector-emitter voltage open base - -100 V VEBO emitter-base voltage open collector - -5 V IC collector current - -4.1 A ICM peak collector current single pulse; tp ≤ 1 ms - -8.2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.7 W [2] - 1.7 W [3] - 2 W Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa560 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 179 K/W [2] - - 74 K/W [3] - - 63 K/W - - 15 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa561 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa562 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 10 0.33 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa563 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 0.33 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3 standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter ICBO collector-base cut-off current Conditions Min Typ Max Unit VCB = -80 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -80 V; IE = 0 A; Tj = 150 °C; Tamb = 25 °C - - -50 µA ICES collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 200 300 - VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 150 260 - VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 100 175 - VCE = -2 V; IC = -4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 25 40 - IC = -0.5 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -45 -65 mV IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -90 -130 mV IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -225 -320 mV IC = -4.1 A; IB = -410 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -230 -325 mV IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 56 80 mΩ VCEsat RCEsat collector-emitter saturation voltage collector-emitter saturation resistance PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor Table 7. Characteristics …continued Symbol Parameter Min Typ Max Unit VBEsat base-emitter saturation IC = -1 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions - -0.81 -0.9 V IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.93 -1.05 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.78 -0.85 V td delay time - 15 - ns tr rise time VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A; Tamb = 25 °C - 185 - ns ton turn-on time - 200 - ns ts storage time - 150 - ns tf fall time - 175 - ns toff turn-off time - 325 - ns fT transition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C - 100 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 50 80 pF 006aaa645 600 hFE 006aaa651 −14 IC (A) −12 (1) IB (mA) = −1015 −10 −870 400 −580 −8 (2) −290 (3) −435 −145 −6 200 −725 −4 −2 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C VCE = -2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values PBSS306PZ Product data sheet Fig 6. Collector current as a function of collector-emitter voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa646 −1.2 006aaa649 −1.2 VBE (V) VBEsat (V) −0.8 −0.8 (1) (1) (2) (2) −0.4 0 −10−1 Fig 7. −0.4 (3) −1 −10 −102 (3) 0 −10−1 −103 −104 IC (mA) −1 −10 VCE = -2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values 006aaa647 −10 Fig 8. 006aaa648 −10 VCEsat (V) −1 −1 −10−1 (1) (2) (3) −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values VCEsat (V) −10−1 −102 (1) (2) (3) −10−2 −10−1 Fig 9. −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PBSS306PZ Product data sheet −10 −102 −103 −104 IC (mA) Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa650 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 (1) (2) (3) 10−1 10−2 −10−1 −1 −10 −102 006aaa652 103 (1) (2) (3) 10−1 −103 −104 IC (mA) 10−2 −10−1 −1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS306PZ Product data sheet −10 −102 −103 −104 IC (mA) Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors and is suitable for use in automotive applications. PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 9. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig 15. Package outline SOT223 (SC-73) PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint for SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 17. Wave soldering footprint for SOT223 (SC-73) PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS306PZ v.3 20110726 Product data sheet - PBSS306PZ v.2 Modifications: • • • • 1.2 “Features and benefits” updated In 7 “Characteristics” new parameter added, ICES Fig 15. updated 12 “Legal information” updated PBSS306PZ v.2 20091211 Product data sheet - PBSS306PZ v.1 PBSS306PZ v.1 20060920 Product data sheet - - PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS306PZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 July 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 July 2011 Document identifier: PBSS306PZ