PBLS1501Y; PBLS1501V 15 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1. Product overview Type number Package NXP JEITA PBLS1501Y SOT363 SC-88 PBLS1501V SOT666 - 1.2 Features n n n n n Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications n n n n Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - −15 V - - −500 mA IC = −500 mA; IB = −50 mA - 300 500 mΩ open base - - 50 V TR1; PNP: low VCEsat transistor VCEO collector-emitter voltage IC collector-current (DC) RCEsat equivalent on-resistance TR2; NPN: resistor-equipped transistor VCEO collector-emitter voltage PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch Table 2. Quick reference data …continued Symbol Parameter Min Typ Max Unit IO output current (DC) Conditions - - 100 mA R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 2. Pinning information Table 3. Discrete pinning Pin Description 1 emitter TR1 Simplified outline 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 collector TR1 6 5 Symbol 4 6 5 R1 4 R2 TR2 1 2 3 TR1 001aab555 1 2 3 sym036 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBLS1501Y SC-88 plastic surface mounted package; 6 leads SOT363 PBLS1501V - plastic surface mounted package; 6 leads SOT666 4. Marking Table 5. Marking Type number Marking code[1] PBLS1501Y *C1 PBLS1501V C1 [1] * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 2 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Transistor TR1: PNP VCBO collector-base voltage open emitter - −15 V VCEO collector-emitter voltage open base - −15 V VEBO emitter-base voltage open collector - −6 V IC collector current (DC) - −500 mA - −1 A - −50 mA - −100 mA - 200 mW tp ≤ 1 ms; δ ≤ 0.02 ICM peak collector current IB base current (DC) IBM peak base current tp ≤ 1 ms; δ ≤ 0.02 total power dissipation Tamb ≤ 25 °C Ptot [1] Transistor TR2: NPN VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +12 V negative - −10 V - 100 mA IO output current (DC) ICM peak collector current Ptot total power dissipation Tamb ≤ 25 °C [1] - 100 mA - 200 mW mW Per device Ptot total power dissipation - 300 Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit Per device Rth(j-a) SOT363 [1] - - 416 K/W SOT666 [1][2] - - 416 K/W [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 3 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Transistor TR1: PNP ICBO collector-base cut-off current VCB = −15 V; IE = 0 A - - −100 nA VCB = −15 V; IE = 0 A; Tj = 150 °C - - −50 µA ICES collector-emitter cut-off current VCE = −15 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −10 mA 200 - - 150 - - VCEsat collector-emitter saturation voltage VCE = −2 V; IC = −100 mA [1] VCE = −2 V; IC = −500 mA [1] IC = −10 mA; IB = −0.5 mA IC = −200 mA; IB = −10 mA 90 - - - - −25 mV - - −150 mV IC = −500 mA; IB = −50 mA [1] - - −250 mV - 300 500 mΩ RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA [1] VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] - - −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA [1] - - −0.9 V fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 280 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 10 pF Transistor TR2: NPN ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA mA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 2 hFE DC current gain VCE = 5 V; IC = 20 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 VI(off) off-state input voltage VCE = 5 V; IC = 1 mA - 1.2 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2 1.6 - V R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance - - 2.5 [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz mV pF Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 4 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 001aaa181 600 hFE 001aaa185 −103 VCEsat (mV) (1) (1) −102 400 (2) (3) (2) −10 200 (3) 0 −10−1 −1 −10 −102 −1 −10−1 −103 −1 −10 −102 IC (mA) VCE = −2 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 1. −103 IC (mA) TR1(PNP): DC current gain as a function of collector current; typical values 001aaa183 −1100 VBE (mV) −900 Fig 2. TR1(PNP): Collector-emitter saturation voltage as a function of collector current; typical values 001aaa184 −1200 VBEsat (mV) −1000 (1) −700 (1) −800 (2) (2) −500 −600 (3) (3) −300 −400 −100 −10−1 −1 −10 −102 −103 −200 −10−1 −1 VCE = −2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = −55 °C TR1(PNP): Base-emitter voltage as a function of collector current; typical values Fig 4. −103 TR1(PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 3. −10 IC (mA) IC (mA) © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 5 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 001aaa182 −1200 RCEsat (Ω) (1) (2) (3) IC (mA) 001aaa186 103 102 (4) (5) −800 (6) (7) 10 (8) −400 (9) (1) 1 (10) 0 0 −2 −4 −6 (2) (3) −8 −10 VCE (V) 10−1 −10−1 −1 −10 −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) IB = −7.0 mA (1) Tamb = −55 °C (2) IB = −6.3 mA (2) Tamb = 25 °C (3) IB = −5.6 mA (3) Tamb = 150 °C (4) IB = −4.9 mA (5) IB = −4.2 mA (6) IB = −3.5 mA (7) IB = −2.8 mA (8) IB = −2.1 mA (9) IB = −1.4 mA (10) IB = −0.7 mA Fig 5. TR1(PNP): Collector current as a function of collector-emitter voltage; typical values Fig 6. TR1(PNP): Equivalent on-resistance as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 6 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 006aaa004 −1 006aaa005 103 RCEsat (Ω) VCEsat (V) 102 −10−1 (1) (1) 10 (2) (2) (3) −10−2 1 (3) −10−3 −10−1 −1 −10 −102 −103 10−1 −10−1 −1 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (2) IC/IB = 50 (3) IC/IB = 10 (3) IC/IB = 10 TR1(PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. −103 TR1(PNP): Equivalent on-resistance as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet −102 Tamb = 25 °C (1) IC/IB = 100 Fig 7. −10 IC (mA) IC (mA) © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 7 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 006aaa015 103 006aaa014 103 hFE (1) (2) (3) 102 VCEsat (mV) 102 (1) (2) (3) 10 1 10−1 1 102 10 10 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 9. 102 10 IC (mA) TR2(NPN): DC current gain as a function of collector current; typical values 006aaa016 102 VI(on) (V) Fig 10. TR2(NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa017 10 VI(off) (V) 10 (1) (2) 1 (3) (1) (2) (3) 1 10−1 10−1 1 102 10 10−1 10−2 10−1 IC (mA) 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 11. TR2(NPN): On-state input voltage as a function of collector current; typical values Fig 12. TR2(NPN): Off-state input voltage as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 8 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 8. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 13. Package outline SOT363 (SC-88) PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 9 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 14. Package outline SOT666 PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 10 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS1501Y PBLS1501V Package SOT363 SOT666 Description Packing quantity 3000 4000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - −135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - -165 - -115 - 4 mm pitch, 8 mm tape and reel [1] For further information and the availability of packing methods, see Section 12. [2] T1: normal taping [3] T2: reverse taping PBLS1501Y_PBLS1501V_2 Product data sheet 10000 © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 11 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 10. Revision history Table 10. Revision history Document ID Release date PBLS1501Y_PBLS1501V_2 20090824 Modifications: Data sheet status Change notice Supersedes Product data sheet - PBLS1501Y_PBLS1501V_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • • Table 3 “Discrete pinning”: amended Figure 13 “Package outline SOT363 (SC-88)”: updated Figure 14 “Package outline SOT666”: updated PBLS1501Y_PBLS1501V_1 20041105 Product data sheet PBLS1501Y_PBLS1501V_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 12 of 14 PBLS1501Y; PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBLS1501Y_PBLS1501V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 13 of 14 NXP Semiconductors PBLS1501Y; PBLS1501V 15 V PNP BISS loadswitch 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 August 2009 Document identifier: PBLS1501Y_PBLS1501V_2