PBLS2022D 20 V, 1.8 A PNP BISS loadswitch Rev. 02 — 6 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count AEC-Q101 qualified 1.3 Applications n n n n Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current open base ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −1.8 A; IB = −100 mA [1] - - −20 V - - −1.8 A - - −3 A - 78 117 mΩ - - 50 V TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base IO output current - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 base TR1 2 input (base) TR2 3 output (collector) TR2 4 GND (emitter) TR2 5 collector TR1 6 emitter TR1 6 5 4 1 2 3 Graphic symbol 6 5 4 R2 TR1 TR2 R1 1 2 3 006aab506 3. Ordering information Table 3. Ordering information Type number PBLS2022D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBLS2022D KB PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 2 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −20 V VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5 V IC collector current - −1.8 A ICM peak collector current - −3 A IB base current - −300 mA IBM peak base current single pulse; tp ≤ 1 ms - −1 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 370 mW [2] - 480 mW [3] - 630 mW single pulse; tp ≤ 1 ms TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +30 V negative - −10 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C - 200 mW [1] - 480 mW [2] - 590 mW [3] - 760 mW [1][2] [3] Per device total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 3 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aab507 1000 Ptot (mW) (1) 800 (2) 600 (3) 400 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 260 K/W [2] - - 211 K/W [3] - - 165 K/W - - 100 K/W Per device Rth(j-a) Rth(j-sp) thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 4 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aab508 103 Zth(j-a) (K/W) δ=1 0.50 102 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab509 103 Zth(j-a) (K/W) δ=1 102 0.50 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 5 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aab510 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = −20 V; IE = 0 A - - −100 nA VCB = −20 V; IE = 0 A; Tj = 150 °C - - −50 µA TR1; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off current VCE = −16 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −100 mA VCEsat RCEsat VBEsat collector-emitter saturation voltage collector-emitter saturation resistance base-emitter saturation voltage 220 420 - VCE = −2 V; IC = −500 mA [1] 220 410 - VCE = −2 V; IC = −1 A [1] 200 320 - VCE = −2 V; IC = −1.8 A [1] 160 260 - IC = −0.5 A; IB = −50 mA [1] - −45 −70 mV IC = −1 A; IB = −50 mA [1] - −85 −130 mV IC = −1 A; IB = −100 mA [1] - −80 −120 mV IC = −1.8 A; IB = −100 mA [1] - −140 −210 mV IC = −1 A; IB = −100 mA [1] - 80 120 mΩ IC = −1.8 A; IB = −100 mA [1] - 78 117 mΩ IC = −0.5 A; IB = −50 mA [1] - −0.85 −1 V IC = −1.8 A; IB = −100 mA [1] - −0.93 −1.1 V PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 6 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VBEon base-emitter turn-on voltage VCE = −10 V; IC = −1 A VCC = −10 V; IC = −1 A; IBon = −50 mA; IBoff = 50 mA [1] Min Typ Max Unit - −0.73 −1.1 V - 17 - ns - 33 - ns - 50 - ns td delay time tr rise time ton turn-on time ts storage time - 270 - ns tf fall time - 60 - ns toff turn-off time - 330 - ns fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz - 130 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 45 - pF TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 900 hFE DC current gain VCE = 5 V; IC = 10 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2.5 1.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio Cc collector capacitance [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1 1.2 - 2.5 pF Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBLS2022D_2 Product data sheet 0.8 - © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 7 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aab511 800 hFE 006aab512 −3 IB (mA) = −16.0 IC (A) (1) −14.4 −12.8 600 −11.2 −9.6 −2 −8.0 (2) −6.4 400 −4.8 −3.2 −1 (3) 200 −1.6 0 −10−1 −1 −10 −102 0 0.0 −103 −104 IC (mA) −0.5 −1.0 −1.5 −2.0 VCE (V) VCE = −2 V Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values 006aab513 −1.2 VBE (V) Fig 6. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aab514 −1.2 VBEsat (V) −1.0 −1.0 (1) (1) −0.8 −0.8 (2) (2) −0.6 −0.6 (3) (3) −0.4 −0.4 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −2 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. −103 −104 IC (mA) TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS2022D_2 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 8 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aab515 −1 006aab516 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) −10−2 −10−2 (3) (2) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aab517 103 Fig 10. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aab518 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 (1) (2) (1) (2) (3) 10−1 10−1 (3) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS2022D_2 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 9 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aaa030 103 hFE (1) (2) (3) 102 10 1 10−1 1 102 10 IC (mA) VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa032 10 006aaa033 10 VI(off) (V) VI(on) (V) (1) (1) 1 (2) (2) 1 (3) 10−1 10−1 (3) 1 102 10 10−1 10−2 10−1 IC (mA) 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 14. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 15. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS2022D_2 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 10 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 006aaa031 1 006aab520 1 VCEsat (V) VCEsat (V) (1) (2) (3) 10−1 10−1 10−2 1 102 10 102 10 IC (mA) IC (mA) IC/IB = 50; Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 16. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 17. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 11 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 18. TR1: BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −1 A; IBon = −50 mA; IBoff = 50 mA Fig 19. TR1: Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 12 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 20. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS2022D Package Description SOT457 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T2: reverse taping PBLS2022D_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 13 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBLS2022D_2 20090906 Product data sheet - PBLS2022D_1 Modifications: PBLS2022D_1 • Table 7 “Characteristics”: ICES conditions amended 20090625 Product data sheet PBLS2022D_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 14 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBLS2022D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 6 September 2009 15 of 16 PBLS2022D NXP Semiconductors 20 V, 1.8 A PNP BISS loadswitch 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Quality information . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Packing information. . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 September 2009 Document identifier: PBLS2022D_2