SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Available in uni-directional and bi-directional • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-214AA (SMB J-Bend) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VBR (uni-directional) 6.4 V to 49.1 V VBR (bi-directional) 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM (uni-directional) 1000 W MECHANICAL DATA Case: DO-214AA (SMB J-Bend) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, industrial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified PPPM (bi-directional) 800 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AA (SMB J-Bend) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) SYMBOL uni-directional bi-directional Peak pulse current with a 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave uni-directional only Operating junction and storage temperature range PPPM (1)(2) IPPM (1) IFSM (2) TJ, TSTG VALUE 1000 800 See next table UNIT W A 100 A -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 15-Feb-16 Document Number: 88422 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor UNI-DIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT (1) (V) SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 108.7 SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 40 1.0 15.5 64.5 DEVICE TYPE DEVICE MARKING CODE MIN. MAX. TEST CURRENT IT (mA) SMB10J40A 1CR 44.4 49.1 1.0 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) V = 3.5 V at I = 50 A (uni-directional only) F F STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 Revision: 15-Feb-16 Document Number: 88422 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor BI-DIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE SMB8J5.0CA SMB8J6.0CA SMB8J6.5CA SMB8J7.0CA SMB8J7.5CA SMB8J8.0CA SMB8J8.5CA SMB8J9.0CA SMB8J10CA SMB8J11CA SMB8J12CA SMB8J13CA SMB8J14CA SMB8J15CA SMB8J16CA SMB8J17CA SMB8J18CA SMB8J20CA SMB8J22CA SMB8J24CA SMB8J26CA SMB8J28CA SMB8J30CA SMB8J33CA SMB8J36CA SMB8J40CA 1AE 1AG 1AK 1AM 1AP 1AR 1AT 1AV 1AX 1AZ 1BE 1BG 1BK 1BM 1BP 1BR 1BT 1BV 1BX 1BZ 1CE 1CG 1CK 1CM 1CP 1CR BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 7.25 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 2000 2000 1000 400 200 100 40 20 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 87.0 77.7 71.4 66.7 62.0 58.8 55.6 51.9 47.1 44.0 40.2 37.2 34.5 32.8 30.8 29.0 27.4 24.7 22.5 20.6 19.0 17.6 16.5 15.0 13.8 12.4 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 Notes (1) Pulse test: tp 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL VALUE RJA 72 RJL 20 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SMB10J5.0A-E3/52 SMB10J5.0A-E3/5B SMB10J5.0AHE3/52 (1) SMB10J5.0AHE3/5B (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.106 0.106 0.106 0.106 52 5B 52 5B 750 3200 750 3200 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 15-Feb-16 Document Number: 88422 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 10 SMB10J5.0 SMB10J40A 1 SMB8J5.0C SMB8J40CA 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Bi-Directional 100 µs 1.0 ms 10 10 ms 1 100 10 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 100 200 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 0 10 1.0 0 25 50 75 100 125 150 175 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Revision: 15-Feb-16 Document Number: 88422 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB J-Bend) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) Max. 0.220 REF. Revision: 15-Feb-16 Document Number: 88422 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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