PBLS2004D 20 V PNP BISS loadswitch Rev. 01 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features ■ ■ ■ ■ ■ Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications ■ ■ ■ ■ Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current (DC) RCEsat collector-emitter saturation resistance open base IC = −1 A; IB = −100 mA [1] - - −20 V - - −1 A - 185 280 mΩ - - 50 V TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. open base PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 2. Pinning information Table 2: Pinning Pin Description Simplified outline 1 emitter TR1 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 R1 4 R2 TR2 TR1 1 2 3 sym036 3. Ordering information Table 3: Ordering information Type number PBLS2004D Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4: Marking codes Type number Marking code PBLS2004D F9 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit open emitter - −20 V TR1; PNP low VCEsat transistor VCBO collector-base voltage VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5 V IC collector current (DC) - −1 A ICM peak collector current - −2 A IB base current (DC) - −0.3 A IBM peak base current tp ≤ 300 µs - −0.6 A total power dissipation Tamb ≤ 25 °C [1] - 250 mW [2] - 350 mW [3] - 400 mW Ptot tp ≤ 300 µs PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 2 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 50 V TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative - −10 V IO output current - 100 mA ICM peak collector current tp ≤ 300 µs total power dissipation Tamb ≤ 25 °C Ptot - 100 mA [1] - 200 mW [1] - 400 mW [2] - 530 mW [3] - 600 mW Per device total power dissipation Ptot Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa414 0.8 Ptot (W) (1) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 3 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 315 K/W [2] - - 236 K/W [3] - - 210 K/W Per device Rth(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa415 103 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 10 1 0.02 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 4 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 006aaa463 103 Zth(j-a) (K/W) δ=1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa464 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 2 10 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 5 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = −20 V; IE = 0 A - - −0.1 µA VCB = −20 V; IE = 0 A; Tj = 150 °C - - −50 µA TR1; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V - - −0.1 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.1 µA hFE DC current gain VCE = −2 V; IC = −1 mA 220 495 - VCE = −2 V; IC = −100 mA VCEsat collector-emitter saturation voltage 220 440 - VCE = −2 V; IC = −500 mA [1] 220 310 - VCE = −2 V; IC = −1 A [1] 155 220 - VCE = −2 V; IC = −2 A [1] 60 120 - IC = −100 mA; IB = −1 mA - −55 −90 mV IC = −500 mA; IB = −50 mA [1] - −100 −150 mV IC = −1 A; IB = −50 mA [1] - −200 −300 mV IC = −1 A; IB = −100 mA [1] - −185 −280 mV - 185 280 mΩ RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - −0.95 −1.1 V IC = −1 A; IB = −100 mA [1] - −1 −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A [1] - −0.85 −1.1 V td delay time - 8 - ns tr rise time IC = −1 A; IBon = −50 mA; IBoff = 50 mA - 34 - ns ton turn-on time - 42 - ns ts storage time - 140 - ns tf fall time - 45 - ns toff turn-off time - 185 - ns fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 185 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 15 20 pF PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 6 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch Table 7: Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 180 hFE DC current gain VCE = 5 V; IC = 5 mA 60 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio Cc collector capacitance [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1 1.2 - 2.5 pF Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBLS2004D_1 Product data sheet 0.8 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 7 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 006aaa416 1000 006aaa417 −1 hFE VCEsat (V) 800 (1) −10−1 600 (1) (2) (3) (2) 400 −10−2 (3) 200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa418 −1.0 Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa419 −1.2 VBEsat (V) VBE (V) −0.8 (1) −1.0 (2) −0.8 (1) (2) −0.6 −0.6 (3) −0.4 −0.2 −10−1 (3) −0.4 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V −0.2 −10−1 −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS2004D_1 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 8 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 006aaa420 −2.0 −11.7 mA −10.4 mA −9.1 mA −7.8 mA IB = −13 mA IC (A) −1.6 006aaa421 102 RCEsat (Ω) −6.5 mA −5.2 mA −1.2 10 −3.9 mA −2.6 mA −0.8 1 (1) (2) (3) −1.3 mA −0.4 −0 −0 −2 −4 −6 10−1 −10−1 −1 −10 −102 VCE (V) Tamb = 25 °C −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa422 −1 Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa423 103 RCEsat (Ω) VCEsat (V) 102 −10−1 10 (1) (2) −10−2 1 (3) (1) (2) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C 10−1 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (1) IC/IB = 100 (2) IC/IB = 50 (2) IC/IB = 50 (3) IC/IB = 10 (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS2004D_1 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 9 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 006aaa038 103 006aaa039 10−1 hFE (1) (1) (2) (3) VCEsat (V) (2) 102 (3) 10 1 10−1 1 102 10 10−2 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa040 10 102 10 IC (mA) Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa041 10 VI(on) (V) VI(off) (V) (1) (2) (3) 1 1 (1) (2) (3) 10−1 10−1 1 102 10 10−1 10−1 IC (mA) 102 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS2004D_1 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 10 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 17. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω Fig 18. Test circuit for switching times PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 11 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.26 0.10 0.40 0.25 0.95 1.9 Dimensions in mm 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBLS2004D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 17. [2] T1: normal taping [3] T2: reverse taping PBLS2004D_1 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 12 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 21. Wave soldering footprint PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 13 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBLS2004D_1 20050623 Product data sheet - - PBLS2004D_1 Product data sheet - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01— 23 June 2005 14 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] PBLS2004D_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 23 June 2005 15 of 16 PBLS2004D Philips Semiconductors 20 V PNP BISS loadswitch 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document ID: PBLS2004D_1 Published in The Netherlands