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KSMF640
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
200V
1)
2)
3)
4)
RDSON
ID
9.8A
0.18Ω
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-220F
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
9.8
Continuous Drain Current-T=100℃
3.7
Pulsed Drain Current2
24
EAS
Single Pulse Avalanche Energy3
230
PD
Power Dissipation4
35
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMF640
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
3.6
RƟJA
Thermal Resistance, Junction to Ambient1
65
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMF640
KSMF640
TO-220F
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
200
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
25
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
2.0
—
4.0
V
VDS=10V,ID=6A
—
—
0.4
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
3.2
—
—
—
800
—
—
240
—
—
76
—
—
9.4
—
—
28
—
—
39
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
20
—
Qg
Total Gate Charge
—
—
43
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
7.0
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
—
23
ns
ns
ns
ns
nC
nC
nC
—
—
2.0
V
—
170
340
ns
—
1.1
2.2
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMF640
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
unless otherwise noted
Fig 2. Typical Output Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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KSMF640
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig9 . Maximum Effective Transient Thermal Impedance, Junction-to-Case
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