Analog Power AM80N06-05D N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 5.9 @ VGS = 10V 6.6 @ VGS = 5.5V ID(A) 76 72 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 Tc=25°C ID 76 Continuous Drain Current a IDM Pulsed Drain Current b 300 IS 55 Continuous Source Current (Diode Conduction) a a T =25°C P 50 Power Dissipation c D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 40 RθJC 3 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM80N06-05D_1A Analog Power AM80N06-05D Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 38 A VGS = 5.5 V, ID = 36 A VDS = 15 V, ID = 20 A IS = 27.5 A, VGS = 0 V Dynamic VDS = 30 V, VGS = 5.5 V, ID = 20 A VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 100 Unit V nA uA A 5.9 6.6 24 0.85 79 29 40 39 65 157 46 10331 565 491 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM80N06-05D_1A Analog Power AM80N06-05D Typical Electrical Characteristics 0.02 50 40 0.015 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 4.5V 0.01 5V 0.005 30 20 10 5.5V,6V,8V,10V 0 0 0 10 20 30 40 0 50 ID-Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.03 100 TJ = 25°C ID = 20A 0.025 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.02 0.015 0.01 10 1 0.1 0.005 0 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 50 15000 F = 1MHz 10V,8V,6V,5.5V 40 Ciss Capacitance (pf) ID - Drain Current (A) 1.2 5V 30 20 4.5V 10000 5000 10 0 Coss Crss 0 0 0.1 0.2 0.3 0.4 0.5 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM80N06-05D_1A Analog Power AM80N06-05D Typical Electrical Characteristics 2.5 VDS = 30V ID = 20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 30 60 90 120 150 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 450 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 400 350 300 250 200 150 100 50 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 40 °C /W 0.05 P(pk) 0.02 t1 t2 0.01 Single Pulse 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM80N06-05D_1A Analog Power AM80N06-05D Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. © Preliminary 5 Publication Order Number: DS_AM80N06-05D_1A