Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5350T
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 13
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−50
V
IC
collector current (DC)
−2
A
ICRP
repetitive peak collector
current
−3
A
RCEsat
equivalent on-resistance
135
mΩ
APPLICATIONS
• Power management applications
PINNING
• Low and medium power DC/DC convertors
PIN
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpage
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.
3
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
PBSS5350T
1
ZD*
Top view
2
MAM256
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPENUMBER
NAME
PBSS5350T
2004 Jan 13
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−2
A
ICRP
repetitive peak collector current
note 1
−
−3
A
ICM
peak collector current
single peak
−
−5
A
IB
base current (DC)
Ptot
total power dissipation
−
−0.5
A
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
480
mW
Tamb ≤ 25 °C; note 4
−
540
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth (j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
in free air; note 3
230
K/W
in free air; notes 1 and 4
104
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 13
3
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector-base cut-off current VCB = −50 V; IE = 0
MIN.
TYP.
MAX.
UNIT
−
−
−100
nA
VCB = −50 V; IE = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −100 mA
200
−
−
VCE = −2 V; IC = −500 mA
200
−
−
VCE = −2 V; IC = −1 A; note 1
200
−
−
VCE = −2 V; IC = −2 A; note 1
130
−
−
VCE = −2 V; IC = −3 A; note 1
80
−
−
IC = −500 mA; IB = −50 mA
−
−
−90
mV
IC = −1 A; IB = −50 mA
−
−
−180
mV
IC = −2 A; IB = −100 mA; note 1
−
−
−320
mV
IC = −2 A; IB = −200 mA; note 1
−
−
−270
mV
IC = −3 A; IB = −300 mA; note 1
−
−
−390
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = −2 A; IB = −200 mA; note 1
−
90
135
mΩ
VBEsat
base-emitter saturation
voltage
IC = −2 A; IB = −100 mA; note 1
−
−
−1.1
V
IC = −3 A; IB = −300 mA; note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −1 A; note 1
−1.2
−
−
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 13
4
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
MLD885
1000
MLD886
−1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
800
(1)
−800
(1)
(2)
600
400
(3)
(2)
−400
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD887
−1300
−10
−102
Base-emitter voltage as a function of
collector current; typical values.
MLD888
−1300
handbook, halfpage
−103
−104
IC (mA)
handbook, halfpage
VBEsat
VBEsat
(mV)
(mV)
(1)
−900
−900
(1)
(2)
(2)
(3)
(3)
−500
−500
−100
−10−1
−1
−10
−102
−100
−10−1
−103
−104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
−1
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 13
5
−10
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
MLD889
−103
handbook, halfpage
MLD890
−103
handbook, halfpage
VCEsat
(mV)
VCEsat
−102
−102
(mV)
(1)
(2)
(3)
(1)
−10
(2)
−10
(3)
−1
−10−1
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD891
−104
handbook, halfpage
−10
−102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD892
−104
handbook, halfpage
VCEsat
−103
−104
IC (mA)
VCEsat
(mV)
(mV)
−103
−103
−102
(1)
(2)
−102
(3)
(1)
−10
(3) (2)
−1
−−10−1
−1
−10
−102
−10
−10−1
−103
−104
IC (mA)
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
−1
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 13
6
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
MLD893
103
handbook, halfpage
RCEsat
(Ω)
102
10
1
(1)
10−1
(2)
(3)
10−2 −1
−10
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 13
7
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 13
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 13
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Jan 13
Document order number: 9397 750 12442