link

AM90N06-19B
Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management such as
computers, printers, and power supplies.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
19 @ VGS = 10V
60
24 @ VGS = 4.5V
ID (A)
a
90
D1
•
•
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TO-263 saves board space
Fast switching speed
High performance trench technology
G1
S1
N-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
VDS
Drain-Source Voltage
60
V
±20
Gate-Source Voltage
VGS
a
o
TC=25 C ID
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
a
90
IDM
240
IS
90
o
TC=25 C P D
Power Dissipation
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a
A
W
300
TJ, Tstg -55 to 175
Operating Junction and Storage Temperature Range
RθJA
RθJC
MaximumJunction-to-Ambient
MaximumJunction-to-Case
A
o
C
Maximum Units
62.5
0.5
o
C/W
C/W
o
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM90N06-19B_A
AM90N06-19B
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
A
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
Dynamic
IDSS
A
rDS(on)
gfs
VSD
1
VDS = 0 V, VGS = 20 V
±100
VDS = 48 V, VGS = 0 V
1
25
o
VDS = 48 V, VGS = 0 V, T J = 55 C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 2 A
VGS = 4.5 V, ID = 2 A
VDS = 15 V, ID = 2 A
IS = 2 A, VGS = 0 V
120
V
nA
uA
A
19
25
30
1.1
mΩ
S
V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 2 A
VDD = 25 V, RL = 25 Ω , ID = 34 A,
VGEN = 10 V
20
5
10
6
6
50
20
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM90N06-19B_A