SPICE Device Model SiR172DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to + 125 °C Temperature Range • Model the Gate Charge SUBCIRCUIT MODEL SCHEMATIC D CGD R1 3 M2 Gy G RG Gx – + ETCV CGS DBD M1 S Note • This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. S13-0825-Rev. B, 22-Apr-13 1 Document Number: 65310 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiR172DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Drain-Source On-State Resistancea RDS(on) SIMULATED MEASURED DATA DATA UNIT Static 1.9 - VGS = 10 V, ID = 16.1 A 0.0076 0.0074 VGS = 4.5 V, ID = 13.6 A 0.0108 0.0103 V Forward Transconductancea gfs VDS = 15 V, ID = 16.1 A 41 49 S Diode Forward Voltagea VSD IS = 10 A 0.84 0.85 V 997 997 198 195 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 16.1 A VDS = 15 V, VGS = 4.5 V, ID = 16.1 A 122 120 17 19.5 9.3 9.8 3.7 3.7 3.7 3.7 pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. S13-0825-Rev. B, 22-Apr-13 2 Document Number: 65310 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiR172DP www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) 50 5 40 4 TJ = 125 °C ID - Drain Current (A) ID - Drain Current (A) VGS = 10 V, 7 V, 6 V, 5 V, 4 V 30 20 VGS = 3 V 10 TJ = - 55 °C 3 2 1 TJ = 25 °C 0 0 0.0 0.3 0.6 0.9 1.2 0 1.5 1 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) 1500 0.015 Ciss 0.012 Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 VGS = 4.5 V 0.009 VGS = 10 V 900 600 Coss 300 Crss 0.006 0 0 10 20 30 40 50 0 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 100 VDS = 15 V ID = 16.1 A 8 TJ = 25 °C VDS = 24 V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 6 6 4 TJ = 150 °C 10 1 2 0.1 0 0 3 6 9 12 15 18 21 0 Qg - Total Gate Charge (nC) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. S13-0825-Rev. B, 22-Apr-13 3 Document Number: 65310 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiR172DP www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) 1.7 0.030 ID = 17 A ID = 16.1 A RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance Normalized 1.4 VGS = 10 V, 4.5 V 1.1 0.8 0.020 TJ = 125 °C 0.010 TJ = 25 °C 0.5 - 50 0.000 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Note • Dots and squares represent measured data. S13-0825-Rev. B, 22-Apr-13 4 Document Number: 65310 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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