P12/EC0 20 P12/EC0 20 P12/EC0 1000 500 P04/INT04 P04/INT04 P04/INT04 20 P12/EC0 P04/INT04 P02/INT02 | VESD (V) | P02/INT02 P01/AN01 P03/INT03 P02/INT02 P01/AN01 PO0/AN00 P03/INT03 P02/INT02 P01/AN01 PO0/AN00 P03/INT03 P01/AN01 PO0/AN00 P64/EC1 P03/INT03 PO0/AN00 P64/EC1 TO11/P63 TO10/P62 10 TO10/P62 RSTX/PF2 5 X0A/PG1 RSTX/PF2 5 X0A/PG1 X1A/PG2 Cpin X1A/PG2 Vss Cpin Vss X1/PF1 Vcc X1/PF1 1 X0/PF0 Vcc TO11/P63 P64/EC1 15 P07/INT07 2000 1 X0/PF0 10 15 2-2 VSS ref. P07/INT07 500 P07/INT07 1000 P07/INT07 1500 P06/INT06 2000 P06/INT06 2 HBM VESD = ±2000V C = 100pF R = 1.5kΩ Ta = 25℃ P64/EC1 TO10/P62 TO11/P63 TO10/P62 RSTX/PF2 TO11/P63 RSTX/PF2 | VESD (V) | 5 X0A/PG1 Cpin 5 X0A/PG1 X1A/PG2 Cpin X1A/PG2 Vss Vcc Vss X1/PF1 Vcc 10 15 2-1 VCC ref. P06/INT06 50 P06/INT06 100 P05/INT05 150 P05/INT05 200 P05/INT05 250 X1/PF1 0 FUJITSU MICROELECTRONICS Proprietary *This characteristic is an ability value in a specific sample. It is not in the guarantee value 20 0 P05/INT05 300 1 X0/PF0 0 15 1-2 VSS ref. 1 X0/PF0 0 10 1500 | VESD (V) | 250 200 150 100 | VESD (V) | MB95F260H ESD Vcc ref.(TSSOP20) 1-1 VCC ref. 1 MM VESD = ±300V C = 200pF R = 0Ω Ta = 25℃ 300 50