Analog Power AMS930N Asymmetric Dual N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) Q1 20 Q2 30 PRODUCT SUMMARY rDS(on) (mΩ) 28 @ VGS = 5V 16 @ VGS = 5V DFN3X3-8L Typical Applications: • DC/DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Q1 Limit Q2 Limit VDS Drain-Source Voltage 20 30 VGS Gate-Source Voltage ±8 ±20 TA=25°C 7.7 10.2 ID Continuous Drain Current a TA=70°C 5.6 7.4 b IDM Pulsed Drain Current 30 40 a I 3 3.8 Continuous Source Current (Diode Conduction) S T =25°C 2.5 2.5 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a ID (A) 7.7 10.2 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 83 RθJA 120 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V VDS = 0 V, VGS = ±20 V VDS = 16 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 10 V VGS = 5 V, ID = 6.2 A VGS = 5 V, ID = 8.2 A VDS = 15 V, ID = 6.2 A VDS = 15 V, ID = 8.2 A IS = 1.5 A, VGS = 0 V IS = 1.9 A, VGS = 0 V Min (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) (Q1) (Q2) Typ Max 0.4 1 ±100 ±100 1 1 10 15 28 16 7 13 0.74 0.77 Unit V V nA nA uA A A mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Q1 VDS = 10 V, VGS = 4.5 V, ID = 6.2 A Q1 VDD = 10 V, RL = 2.9 Ω, ID = 6.2 A, VGEN = 4.5 V, RGEN = 6 Ω Q1 VDS = 15 V, VGS = 0 V, f = 1 MHz Q2 VDS = 15 V, VGS = 4.5 V, ID = 8.2 A Q2 VDD = 15 V, RL = 1.8 Ω, ID = 8.2 A, VGEN = 10 V, RGEN = 6 Ω Q2 VDS = 15 V, VGS = 0 V, f = 1 MHz 2 7 1.1 2.3 10 23 36 16 439 78 68 11 5.0 3.6 7 6 30 9 1379 156 116 nC ns pF nC ns pF Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Typical Electrical Characteristics - Q1 5 0.08 4 0.06 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1.8V 2V 0.04 2.5V 0.02 3 2 1 3V,3.5V,4V,4.5V,5V,6V 0 0 0 1 2 3 4 0 5 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 10 TJ = 25°C ID = 6.2A TJ = 25°C 0.15 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.2 0.1 0.05 0 1 0.1 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5 800 F = 1MHz 6V,5V,4.5V, 4V,3.5V,3V 4 700 600 2.5V Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 2V 3 1.8V 2 1 0 Ciss 500 400 300 200 Coss 100 Crss 0 0 0.05 0.1 0.15 0.2 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Typical Electrical Characteristics - Q1 2 VDS = 10V ID = 6.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 8 6 4 2 0 1.5 1 0.5 0 5 10 15 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 0.05 0.02 Single Pulse RθJA = 120 °C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Typical Electrical Characteristics - Q2 5 TJ = 25°C 4 0.04 3.5V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.05 0.03 4V 0.02 3 2 1 0.01 4.5V,5V,5.5V,6V,8V,10V 0 0 0 5 10 ID-Drain Current (A) 0 15 1 1. On-Resistance vs. Drain Current 4 5 100 TJ = 25°C ID = 8.2A TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 2000 15 F = 1MHz 1800 10V,8V,6V, 5.5V,5V,4.5V Ciss 1600 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 10 4V 3.5V 5 1400 1200 1000 800 600 400 Coss Crss 200 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Typical Electrical Characteristics - Q2 2 VDS = 15V ID = 8.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 5 10 15 20 -50 25 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 60 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 120 °C /W 0.05 0.02 0.01 P(pk) Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AMS930N_1A Analog Power AMS930N Package Information © Preliminary 7 Publication Order Number: DS_AMS930N_1A