LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.8 Inch) Pb Lead-Free Parts LDD845/6EGR-XX-PF DATA SHEET DOC. NO : QW0905- LDD845/6EGR-XX-PF REV. : A DATE : 30 - Oct. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 1/9 Package Dimensions 10.0 (0.39") 35.6(1.4") 25.7 (1.0") 20.1 (0.8") 22.0 (0.87") LDD846EGR-XX-PF LIGITEK A F B G E 5.5±0.5 ψ0.51 TYP C D DP 2.54*8=20.32(0.8") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 2/9 Internal Circuit Diagram LDD845EGR-XX-PF 5 14 DIG.1 A DIG.2 B C D G F E DP A B C D G F E DP 17121611 3 8 2 7 1 6 18131510 4 9 LDD846EGR-XX-PF 5 14 DIG.1 A DIG.2 B C D E F G DP 171216 11 3 8 2 7 1 6 18131510 4 9 E G A B C D E F G DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/9 PART NO. LDD845/6EGR-XX-PF Electrical Connection PIN NO. LDD845EGR-XX-PF PIN NO. LDD846EGR-XX-PF 1 Anode E (R) 1 Cathode E (R) 2 Anode D (R) 2 Cathode D (R) 3 Anode C (R) 3 Cathode C (R) 4 Anode DP (R) 4 Cathode DP (R) 5 Common Cathode Dig.1 5 Common Anode Dig.1 6 Anode E (G) 6 Cathode E (G) 7 Anode D (G) 7 Cathode D (G) 8 Anode C (G) 8 Cathode C (G) 9 Anode DP (G) 9 Cathode DP (G) 10 Anode G (G) 10 Cathode G (G) 11 Anode B (G) 11 Cathode B (G) 12 Anode A (G) 12 Cathode A (G) 13 Anode F (G) 13 Cathode F (G) 14 Common Cathode Dig.2 14 Common Anode Dig.2 15 Anode G (R) 15 Cathode G (R) 16 Anode B (R) 16 Cathode B (R) 17 Anode A (R) 17 Cathode A (R) 18 Anode F (R) 18 Cathode F (R) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 4/9 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT E G Forward Current Per Chip IF 30 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 120 mA Power Dissipation Per Chip PD 100 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO GaAsP/GaP Orange LDD845EGR-XX-PF GaP Green GaAsP/GaP Orange LDD846EGR-XX-PF GaP Green Common Cathode Common Anode Electrical λP △λ (nm) (nm) Vf(v) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 640 45 1.7 2.1 2.6 1.0 565 30 1.7 2.1 2.6 1.75 3.05 640 45 1.7 2.1 2.6 1.0 565 30 1.7 2.1 2.6 1.75 3.05 Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 1.75 2:1 1.75 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 5/9 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/9 PART NO. LDD845/6EGR-XX-PF Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 550 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 7/9 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 8/9 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 50 100 60 Seconds Max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD845/6EGR-XX-PF Page 9/9 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11