KSM4310 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 100V 7.0MΩ 140A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 140 Continuous Drain Current-T=100℃ 97 Pulsed Drain Current2 550 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 330 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM4310 KERSMI ELECTRONIC CO.,LTD. 100V Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 N-channel MOSFET Ratings Units 0.45 ℃/W 40 Package Marking and Ordering Information Part NO. Marking Package KSM4310 KSM4310 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 20 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±200 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — — 7.0 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 160 — — — 7670 — — 540 — — 280 — — 26 — — 110 — — 68 — On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance MΩ --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 78 — Qg Total Gate Charge — 170 250 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 46 — Qgd Gate-Drain “Miller” Charge ID=6A — 62 — ns ns ns ns nC nC nC — — 1.3 V — 45 63 ns — 82 120 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM4310 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com 3 KSM4310 KERSMI ELECTRONIC CO.,LTD. 100V Fig5.Typical Capacitance vs. Voltage N-channel MOSFET Fig6.Typical Gate Charge vs. Drain-to-Source Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.kersemi.com 4 KSM4310 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 5