SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PDTD143ET Package PNP complement NXP JEITA JEDEC SOT23 - TO-236AB PDTB143ET PDTD143XT PDTB143XT PDTD114ET PDTB114ET Package configuration small 1.2 Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count 10 % resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C 1.3 Applications IC inputs control Cost-saving alternative to BC807 or BC817 series transistors in digital applications Switching loads PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 500 mA R1 bias resistor 1 (input) R2 PDTD143ET 4.7 k PDTD143XT 4.7 k PDTD114ET 10 k PDTD143ET 4.7 k PDTD143XT 10 k PDTD114ET 10 k bias resistor 2 (base-emitter) 2. Pinning information Table 3. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Graphic symbol 3 1 output (collector) R1 1 R2 2 sym007 3. Ordering information Table 4. Ordering information Type number Package PDTD1xxxT series PDTD1XXXT_SER Product data sheet Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 2 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 4. Marking Table 5. Marking codes Type number Marking code[1] PDTD143ET *4Z PDTD143XT *5Z PDTD114ET *10 [1] * = placeholder for manufacturing site code 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V PDTD143ET 7 V 10 V PDTD143ET 10 +30 V PDTD143XT 7 +30 V PDTD114ET 10 +50 V output current IO total power dissipation Ptot Product data sheet - input voltage VI PDTD1XXXT_SER PDTD143XT PDTD114ET Tamb 25 C - 500 mA [1] - 320 mW [2] - 460 mW Tj junction temperature - 175 C Tamb ambient temperature 55 +175 C Tstg storage temperature 55 +175 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 3 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012834 500 Ptot (mW) (1) 400 300 (2) 200 100 0 -75 25 125 225 Tamb (°C) (1) FR4 PCB, 4-layer copper, standard footprint (2) FR4 PCB, single-sided copper, standard footprint. Fig 1. Power derating curves 6. Thermal characteristics Table 7. PDTD1XXXT_SER Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 470 K/W [2] - - 327 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 4 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012060 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, tin-plated and standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23/TO-236AB; typical values aaa-012061 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23/TO-236AB; typical values PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 5 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Typ Max Unit VCB = 40 V; IE = 0 A - - 100 nA collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off VCE = 50 V; IB = 0 A current - - 0.5 A IEBO emitter-base cut-off current PDTD143ET - - 0.9 mA PDTD143XT - - 0.6 mA PDTD114ET - - 0.4 mA PDTD143ET 60 - - PDTD143XT 70 - - PDTD114ET 70 - - - - 100 mV PDTD143ET 0.6 0.9 1.5 V PDTD143XT 0.5 0.75 1.1 V PDTD114ET 0.6 1.0 1.5 V PDTD143ET 1.0 1.6 2.2 V PDTD143XT 1.0 1.25 2.0 V PDTD114ET 1.0 1.9 3.0 V PDTD143ET 3.3 4.7 6.1 k PDTD143XT 3.3 4.7 6.1 k PDTD114ET 7.0 10 13 k PDTD143ET 0.9 1 1.1 PDTD143XT 1.91 2.13 2.34 PDTD114ET 0.9 1.0 1.1 - 7 - pF - 225 - MHz DC current gain VEB = 5 V; IC = 0 A VCE = 5 V; IC = 50 mA VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA VI(off) off-state input voltage VCE = 5 V; IC = 100 A VI(on) R1 on-state input voltage VCE = 0.3 V; IC = 20 mA bias resistor 1 (input) R2/R1 Product data sheet Min ICBO hFE PDTD1XXXT_SER Conditions bias resistor ratio Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz [1] Characteristics of built-in transistor. All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 [1] © NXP Semiconductors N.V. 2014. All rights reserved. 6 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012442 103 aaa-012444 10-1 (1) hFE (1) (2) (2) VCEsat (V) (3) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. PDTD143ET: DC current gain as a function of collector current; typical values Fig 5. aaa-012449 102 103 IC (mA) PDTD143ET: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012573 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) (2) 1 (3) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C PDTD143ET: On-state input voltage as a function of collector current; typical values PDTD1XXXT_SER Product data sheet 10 IC (mA) (1) Tamb = 40 C Fig 6. 1 Fig 7. PDTD143ET: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 7 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012435 0.5 IC (A) Cc (pF) 1.55 0.4 aaa-012440 20 1.7 16 1.4 1.25 1.1 0.3 12 0.95 0.8 0.2 8 0.65 0.5 0.1 4 IB = 0.35 mA 0 0 0 1 2 3 4 5 0 10 20 VCE (V) Tamb = 25 C Fig 8. 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C PDTD143ET: Collector current as a function of collector-emitter voltage; typical values Fig 9. PDTD143ET: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 10. PDTD143ET: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 8 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012441 103 aaa-012445 10-1 (1) hFE (1) (2) (2) VCEsat (V) (3) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 11. PDTD143XT: DC current gain as a function of collector current; typical values aaa-012450 102 103 IC (mA) Fig 12. PDTD143XT: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012574 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) 1 (3) (2) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 13. PDTD143XT: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXT_SER 1 Fig 14. PDTD143XT: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 9 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012071 0.5 IC (A) Cc (pF) 1.45 0.4 aaa-012072 20 1.6 16 1.3 1.15 0.3 12 1.0 0.85 0.7 0.2 8 0.55 0.1 4 0.4 IB = 0.25 mA 0 0 0 1 2 3 4 5 0 10 20 VCE (V) Tamb = 25 C 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C Fig 15. PDTD143XT: Collector current as a function of collector-emitter voltage; typical values Fig 16. PDTD143XT: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 17. PDTD143XT: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 10 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012443 103 aaa-012446 10-1 (1) hFE (2) (1) VCEsat (V) (3) (2) (3) 102 10 1 10-1 1 10 102 103 10-2 1 102 10 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 18. PDTD114ET: DC current gain as a function of collector current; typical values aaa-012451 102 103 IC (mA) Fig 19. PDTD114ET: Collector-emitter saturation voltage as a function of collector current; typical values aaa-012575 10 VI(on) (V) VI(off) (V) 10 (1) (1) (2) (2) 1 (3) (3) 1 10-1 10-1 1 10 102 103 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 20. PDTD114ET: On-state input voltage as a function of collector current; typical values Product data sheet 10 IC (mA) (1) Tamb = 40 C PDTD1XXXT_SER 1 Fig 21. PDTD114ET: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 11 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors aaa-012073 0.5 IC (A) Cc (pF) 1.55 0.4 aaa-012074 10 1.7 8 1.4 1.25 1.1 0.3 6 0.95 0.8 0.2 4 0.65 0.5 0.1 2 IB = 0.35 mA 0 0 0 1 2 3 4 5 0 10 20 VCE (V) Tamb = 25 C 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C Fig 22. PDTD114ET: Collector current as a function of collector-emitter voltage; typical values Fig 23. PDTD114ET: Collector capacitance as a function of collector-base voltage; typical values aaa-012066 103 fT (MHz) 102 10 1 10-1 1 10 102 103 IC (mA) VCE = 5 V; Tamb = 25 C Fig 24. PDTD114ET: Transition frequency as a function of collector current; typical values of built-in transistor PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 12 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 25. Package outline PDTD1xxxT series (SOT23/TO-236AB) PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 13 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Dimensions in mm Fig 26. Reflow soldering footprint PDTD1xxxT series (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Dimensions in mm Fig 27. Wave soldering footprint PDTD1xxxT series (SOT23/TO-236AB) PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 14 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTD1XXXT_SER v.1 20140515 Product data sheet - - PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 15 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PDTD1XXXT_SER Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 16 of 18 PDTD1xxxT series NXP Semiconductors 500 mA, 50 V NPN resistor-equipped transistors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTD1XXXT_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 15 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 17 of 18 NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 Quality information . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 May 2014 Document identifier: PDTD1XXXT_SER