PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123EK SOT346 SC-59A TO-236 PDTB123EK PDTD123ES[1] SOT54 SC-43A TO-92 PDTB123ES PDTD123ET SOT23 - TO-236AB PDTB123ET [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ±10 % resistor ratio tolerance 1.3 Applications Digital application in automotive and industrial segments Controlling IC inputs Cost saving alternative for BC817 series in digital applications Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 500 mA R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 0.9 1.0 1.1 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab347 3 006aaa145 SOT54A 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 1 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab447 3 006aaa145 SOT23, SOT346 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 006aaa144 PDTD123E_SER_2 Product data sheet 2 sym007 © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 2 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTD123EK SC-59A plastic surface mounted package; 3 leads SOT346 PDTD123ES[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PDTD123ET - plastic surface mounted package; 3 leads [1] SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code[1] PDTD123EK E3 PDTD123ES D123ES PDTD123ET *7T [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +12 V negative - −10 V - 500 mA output current (DC) IO total power dissipation Ptot Tamb ≤ 25 °C SOT346 - 250 mW SOT54 - 500 mW SOT23 - 250 mW °C Tstg storage temperature −65 +150 Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PDTD123E_SER_2 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 3 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-a) [1] Conditions Min Typ Max Unit SOT346 - - 500 K/W SOT54 - - 250 K/W SOT23 - - 500 K/W thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions Min Typ Max Unit collector-base cut-off VCB = 40 V; IE = 0 A current VCB = 50 V; IE = 0 A - - 100 nA - - 100 nA ICEO collector-emitter cut-off current VCE = 50 V; IB = 0 A - - 0.5 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 2 mA hFE DC current gain VCE = 5 V; IC = 50 mA 40 - - VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA - - 0.3 V VI(off) off-state input voltage VCE = 5 V; IC = 100 μA 0.6 1.1 1.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 1.0 1.5 2.0 V R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 0.9 1.0 1.1 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 100 MHz - 7 - PDTD123E_SER_2 Product data sheet pF © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 4 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 006aaa318 103 hFE (1) (2) (3) 102 006aaa319 10−1 VCEsat (V) 10 (1) (2) (3) 1 10−1 10−1 1 10 102 103 10−2 1 102 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. 006aaa320 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aaa321 10 VI(off) (V) VI(on) (V) (1) (1) (2) 1 (2) 1 (3) (3) 10−1 10−1 1 10 102 103 10−1 10−1 VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values PDTD123E_SER_2 Product data sheet 10 VCE = 5 V (1) Tamb = −40 °C Fig 3. 1 IC (mA) IC (mA) © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 5 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 8. Package outline 1.3 1.0 3.1 2.7 3 0.45 0.38 4.2 3.6 0.6 0.2 0.48 0.40 3.0 1.7 2.5 1.3 1 2 4.8 4.4 1 1.27 2 0.50 0.35 1.9 0.26 0.10 Dimensions in mm Fig 5. 2.54 3 5.2 5.0 04-11-11 Dimensions in mm Package outline SOT346 (SC-59A/TO-236) Fig 6. 04-11-16 Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 0.38 4.2 3.6 14.5 12.7 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 max 0.48 0.40 1 2 4.8 4.4 5.08 2 4.8 4.4 2.54 2.54 3 1.27 3 5.2 5.0 5.2 5.0 14.5 12.7 Dimensions in mm Fig 7. 04-06-28 14.5 12.7 Dimensions in mm Package outline SOT54A Fig 8. 05-01-10 Package outline SOT54 variant 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 9. 0.15 0.09 04-11-04 Package outline SOT23 (TO-236AB) PDTD123E_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 6 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 3000 5000 10000 PDTD123EK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTD123ES SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 SOT54 variant bulk, delta pinning - -112 - SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTD123ET [1] For further information and the availability of packing methods, see Section 12. PDTD123E_SER_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 7 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTD123E_SER_2 20091116 Product data sheet - PDTD123E_SER_1 Modifications: PDTD123E_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20050408 Product data sheet - PDTD123E_SER_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 8 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTD123E_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 November 2009 9 of 10 PDTD123E series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 November 2009 Document identifier: PDTD123E_SER_2