PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 6 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA PNP/PNP complement NPN/NPN complement Package configuration PEMD9 SOT666 - PEMB9 PEMH9 ultra small and flat lead PUMD9 SOT363 SC-88 PUMB9 PUMH9 very small 1.2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - 50 V Per transistor; for the PNP transistor (TR2) with negative polarity VCEO collector-emitter voltage open base - IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 3.7 4.7 5.7 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Graphic symbol 6 5 R1 4 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 006aaa143 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMD9 - plastic surface-mounted package; 6 leads SOT666 PUMD9 SC-88 plastic surface-mounted package; 6 leads SOT363 Table 5. Marking codes 4. Marking Type number Marking code[1] PEMD9 D9 PUMD9 D*9 [1] PEMD9_PUMD9 Product data sheet * = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor (TR2) with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 6 V VI input voltage TR1 positive - +40 V negative - 6 V - +6 V input voltage TR2 positive negative - 40 V IO output current - 100 mA ICM peak collector current single pulse; tp 1 ms - 100 mA Ptot total power dissipation Tamb 25 C PEMD9 (SOT666) [1][2] - 200 mW PUMD9 (SOT363) [1] - 200 mW PEMD9 (SOT666) [1][2] - 300 mW PUMD9 (SOT363) [1] - 300 mW Per device total power dissipation Ptot PEMD9_PUMD9 Product data sheet Tamb 25 C Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air PEMD9 (SOT666) [1][2] - - 625 K/W PUMD9 (SOT363) [1] - - 625 K/W PEMD9 (SOT666) [1][2] - - 417 K/W PUMD9 (SOT363) [1] - - 417 K/W Per device Rth(j-a) PEMD9_PUMD9 Product data sheet thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMD9 (SOT666); typical values 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PUMD9 (SOT363); typical values PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor (TR2) with negative polarity ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A current VCE = 30 V; IB = 0 A; Tj = 150 C - - 1 A - - 5 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 A hFE DC current gain VCE = 5 V; IC = 5 mA 100 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.7 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 - V k R1 bias resistor 1 (input) 7 10 13 R2/R1 bias resistor ratio 3.7 4.7 5.7 Cc collector capacitance TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF TR1 (NPN) - 230 - MHz TR2 (PNP) - 180 - MHz fT [1] PEMD9_PUMD9 Product data sheet transition frequency VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz [1] Characteristics of built-in transistor All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac784 103 006aac785 1 (1) hFE (2) VCEsat (V) (3) 102 (1) 10-1 (2) (3) 10 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 5. 006aac786 10 VI(on) (V) TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aac787 10 VI(off) (V) (1) 1 (1) 1 (2) (2) (3) 10-1 10-1 1 (3) 102 10 10-1 10-1 IC (mA) VCE = 0.3 V (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C TR1 (NPN): On-state input voltage as a function of collector current; typical values Product data sheet 10 VCE = 5 V (1) Tamb = 40 C PEMD9_PUMD9 1 IC (mA) (1) Tamb = 40 C Fig 6. 102 10 IC (mA) Fig 7. TR1 (NPN): Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac788 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 10 10-1 0 0 10 20 30 40 50 VCB (V) 102 10 IC (mA) f = 1 MHz; Tamb = 25 C Fig 8. 1 VCE = 5 V; Tamb = 25 C TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values 006aac789 103 hFE Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values of built-in transistor 006aac790 -1 (1) (2) VCEsat (V) (3) 102 -10-1 (1) (2) 10 (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values Product data sheet -102 -10 IC (mA) (1) Tamb = 100 C PEMD9_PUMD9 -1 Fig 11. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac791 -10 006aac792 -10 VI(off) (V) VI(on) (V) (1) (2) -1 (1) -1 (2) (3) (3) -10-1 -10-1 -1 -102 -10 -10-1 -10-1 -1 IC (mA) -10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 12. TR2 (PNP): On-state input voltage as a function of collector current; typical values 006aac793 7 Fig 13. TR2 (PNP): Off-state input voltage as a function of collector current; typical values 006aac763 103 Cc (pF) 6 fT (MHz) 5 4 102 3 2 1 0 0 -10 -20 -30 -40 -50 VCB (V) f = 1 MHz; Tamb = 25 C Product data sheet -1 -102 -10 IC (mA) VCE = 5 V; Tamb = 25 C Fig 14. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values PEMD9_PUMD9 10 -10-1 Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values of built-in transistor All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 1.5 6 2.2 1.8 0.6 0.5 5 6 4 1.1 0.8 5 4 2 3 0.45 0.15 0.3 0.1 1.7 1.5 2.2 1.35 2.0 1.15 1.3 1.1 pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 pin 1 index 1.3 1 Dimensions in mm 04-11-08 Fig 16. Package outline PEMD9 (SOT666) 0.25 0.10 0.3 0.2 0.65 Dimensions in mm 06-03-16 Fig 17. Package outline PUMD9 (SOT363) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PEMD9 SOT666 PUMD9 [1] PEMD9_PUMD9 Product data sheet SOT363 Packing quantity 3000 4000 8000 10000 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 18. Reflow soldering footprint PEMD9 (SOT666) PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint PUMD9 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint PUMD9 (SOT363) PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMD9_PUMD9 v.6 20111122 Product data sheet - PEMD9_PUMD9 v.5 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. • • • • • Section 8 “Test information”: added Section 1 “Product profile”: updated Section 4 “Marking”: updated Figure 1 to 15: added Section 5 “Limiting values”: updated Section 6 “Thermal characteristics”: updated Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to VI(off) off-state input voltage, ICEO updated, fT added Section 9 “Package outline”: superseded by minimized package outline drawings Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated PEMD9_PUMD9 v.5 20040415 Product data sheet - PEMD9_PUMD9 v.4 PEMD9_PUMD9 v.4 20031104 Product specification - PEMD9 v.2 PUMD9 v.3 PEMD9 v.2 20020905 Product specification - PEMD9 v.1 PEMD9 v.1 20011022 Preliminary specification - - PUMD9 v.3 20010216 Product specification - PUMD9 v.2 PUMD9 v.2 19990520 Product specification - PUMD9 v.1 PUMD9 v.1 19990107 Product specification - - PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 14 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PEMD9_PUMD9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 22 November 2011 © NXP B.V. 2011. All rights reserved. 15 of 16 PEMD9; PUMD9 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2011 Document identifier: PEMD9_PUMD9